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A nanoscale study of hafnium oxide resistive memory switching dynamics

Journal of physics. D, Applied physics, 2024-05, Vol.57 (21)

2024

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A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

Journal of applied physics, 2014-07, Vol.116 (2)

2014

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Pre-breakdown negative differential resistance in thin oxide film: Conductive-atomic force microscopy observation and modelling

Journal of applied physics, 2011-08, Vol.110 (3), p.034104-034104-6

2011

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Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum

Journal of applied physics, 2018-07, Vol.124 (1)

2018

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Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Microelectronics and reliability, 2013-12, Vol.53 (12), p.1857-1862

2013

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Self-assembled block polymer templates as high resolution lithographic masks

Surface science, 2007-07, Vol.601 (13), p.2611-2614

2007

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Identification of halogen containing radicals in silicon etching plasmas and density measurement by UV broad band absorption spectroscopy

Journal of physics. D, Applied physics, 2004-07, Vol.37 (14), p.1954-1964

2004

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Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas

Plasma sources science & technology, , Vol.13 (3), p.522-530

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Resistive switching study in HfO 2 based resistive memories by conductive atomic force microscopy in vacuum

Journal of applied physics, 2018-07, Vol.124 (1)

2018

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Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas

Plasma sources science & technology, 2005-05, Vol.14 (2), p.S42-S52

2005

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SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Microelectronic engineering, 2011-07, Vol.88 (7), p.1376-1379

2011

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Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.553-563

2004

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Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr∕Cl2∕O2 plasma

Journal of applied physics, 2004-10, Vol.96 (8), p.4578-4587

2004

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A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

Journal of physics. D, Applied physics, 2014 (116)

2014

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Self-assembling study of a cylinder-forming block copolymer via a nucleation–growth mechanism

Nanotechnology, 2009-03, Vol.20 (9), p.095602-095602

2009

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Correlation and Interaction between Sidewall Passivation and Chamber Walls Deposition During Silicon Gate Etching

Contributions to plasma physics (1985), 2004-09, Vol.44 (5-6), p.413-425

2004

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Plasma–wall interactions during silicon etching processes in high-density HBr/Cl 2 /O 2 plasmas

Plasma sources science & technology, 2005-05, Vol.14 (2), p.S42-S52

2005

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Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

Nanoscale research letters, 2011-03, Vol.6 (1), p.187-187, Article 187

2011

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Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

Chemistry of materials, 2008-10, Vol.20 (19), p.6183-6188

2008

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Phase behaviour in thin film of cylinder-forming diblock copolymer: deformation and division of heptacoordinated microdomains

Macromolecules, 2007, p.40, July (2007), 5054-5059

2007

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SiON and SiO sub(2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum)

Microelectronic engineering, 2011-07, Vol.88 (7), p.1376-1379

2011

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SiON and SiO 2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Microelectronic engineering, 2011, Vol.88 (7), p.1376-1379

2011

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Determination of absolute radical concentration in silicon etching plasma by UV broad band absorption spectroscopy

Journal of physics. D, Applied physics, 2004

2004

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Production and loss mechanisms of SiCl{sub X} etch products during silicon etching in a high density HBr/Cl{sub 2}/O{sub 2} plasma

Journal of applied physics, 2004-10, Vol.96 (8)

2004

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Influence of reactor walls on plasma chemistry and on silicon etch products densities during silicon etching processes in halogen based plasmas

Plasma sources science & technology, 2004

2004

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A nanoscale study of hafnium oxide resistive memory switching dynamics

A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

Pre-breakdown negative differential resistance in thin oxide film: Conductive-atomic force microscopy observation and modelling

Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Self-assembled block polymer templates as high resolution lithographic masks

Identification of halogen containing radicals in silicon etching plasmas and density measurement by UV broad band absorption spectroscopy

Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas

Resistive switching study in HfO 2 based resistive memories by conductive atomic force microscopy in vacuum

Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas

SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes

Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr∕Cl2∕O2 plasma

A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

Self-assembling study of a cylinder-forming block copolymer via a nucleation–growth mechanism

Correlation and Interaction between Sidewall Passivation and Chamber Walls Deposition During Silicon Gate Etching

Plasma–wall interactions during silicon etching processes in high-density HBr/Cl 2 /O 2 plasmas

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

Phase behaviour in thin film of cylinder-forming diblock copolymer: deformation and division of heptacoordinated microdomains

SiON and SiO sub(2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum)

SiON and SiO 2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Determination of absolute radical concentration in silicon etching plasma by UV broad band absorption spectroscopy

Production and loss mechanisms of SiCl{sub X} etch products during silicon etching in a high density HBr/Cl{sub 2}/O{sub 2} plasma

Influence of reactor walls on plasma chemistry and on silicon etch products densities during silicon etching processes in halogen based plasmas

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