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Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays

Nano letters, 2017-03, Vol.17 (3), p.1538-1544

2017

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Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

Nano letters, 2017-04, Vol.17 (4), p.2259-2264

2017

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Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Nano letters, 2017-02, Vol.17 (2), p.599-605

2017

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The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

Journal of physics. D, Applied physics, 2013-07, Vol.46 (26), p.264001-1-10

2013

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Structural and electronic properties of isovalent boron atoms in GaAs

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Oscillatory persistent currents in self-assembled quantum rings

Physical review letters, 2007-10, Vol.99 (14), p.146808-146808, Article 146808

2007

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Spin-orbit-induced circulating currents in a semiconductor nanostructure

Physical review letters, 2014-05, Vol.112 (18), p.187201-187201, Article 187201

2014

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Spatial structure of an individual Mn acceptor in GaAs

Physical review letters, 2004-05, Vol.92 (21), p.216806-216806, Article 216806

2004

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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Applied physics letters, 2005-09, Vol.87 (13), p.131902-131902-3

2005

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Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

Applied physics letters, 2010-02, Vol.96 (6), p.062101-062101-3

2010

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Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (3), Article 035305

2012

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Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Applied physics letters, 2007-05, Vol.90 (21), p.213105-213105-3

2007

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Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs

Physical review. B, Condensed matter and materials physics, 2005-10, Vol.72 (16), p.165332.1-165332.6, Article 165332

2005

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Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

Nature physics, 2010-07, Vol.6 (7), p.534-538

2010

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An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Semiconductor science and technology, 2011-06, Vol.26 (6), p.064007

2011

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Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

Applied physics letters, 2009-01, Vol.94 (2), p.023107-023107-3

2009

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Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2005-09, Vol.87 (11), p.111903-111903-3

2005

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Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

Applied physics letters, 2013-02, Vol.102 (7)

2013

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Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Nano letters, 2011-09, Vol.11 (9), p.3538-3542

2011

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Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2004-12, Vol.85 (23), p.5697-5699

2004

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Warping a single Mn acceptor wavefunction by straining the GaAs host

Nature materials, 2007-07, Vol.6 (7), p.512-515

2007

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Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Applied physics letters, 2002-08, Vol.81 (9), p.1708-1710

2002

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Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Applied physics letters, 2007-04, Vol.101 (8), p.081707-081707-6

2007

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Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

Structural and electronic properties of isovalent boron atoms in GaAs

Oscillatory persistent currents in self-assembled quantum rings

Spin-orbit-induced circulating currents in a semiconductor nanostructure

Spatial structure of an individual Mn acceptor in GaAs

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Warping a single Mn acceptor wavefunction by straining the GaAs host

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

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