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Improvement of wear and hardness of steel by nitrogen implantation

Vacuum, 2004-12, Vol.77 (1), p.37-45

2004

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Deposition and properties of nickel oxide films produced by DC reactive magnetron sputtering

Vacuum, 1998-10, Vol.51 (2), p.157-160

1998

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Further studies of N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam

Thin solid films, 2004-07, Vol.459 (1), p.149-151

2004

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Structure and properties of Al2O3 and Al2O3 + Cr2O3 coatings deposited to steel 3 (0.3 wt%C) substrate using pulsed detonation technology

Vacuum, 2001-05, Vol.62 (1), p.21-26

2001

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Complementarity of X-ray diffraction and RBS in thin film characterization

Vacuum, 2005-05, Vol.78 (2), p.455-461

2005

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Characterization of nitrogen-doped amorphous silicon carbide thin films

Vacuum, 1998-10, Vol.51 (2), p.165-167

1998

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Effect of Fe and Zr ion implantation and high-current electron irradiation treatment on chemical and mechanical properties of Ti–V–Al Alloy

Journal of applied physics, 2000-03, Vol.87 (5), p.2142-2148

2000

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Evolution of mechanical properties in tool steel implanted with high energy nitrogen ions

Vacuum, 2001-08, Vol.63 (4), p.737-742

2001

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Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD

Vacuum, 2002-09, Vol.67 (3), p.567-570

2002

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RBS and optical studies of ion-implanted amorphous silicon carbide layers

Vacuum, 2003-03, Vol.70 (2-3), p.457-465

2003

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Trace elements analyses of zircon sample by integration of the LA-ICP-MS, EDS and RBS methods

International journal of mass spectrometry, 2002-11, Vol.221 (2), p.139-146

2002

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Preparation of SrRuO3 films for advanced CMOS metal gates

Materials science in semiconductor processing, 2004, Vol.7 (4-6), p.265-269

2004

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Effect of γ rays on fast neutron registration in CR-39

Radiation measurements, 2003-06, Vol.37 (3), p.201-204

2003

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Neutron spectrometry method for partial radiative capture cross-section measurements

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2001-05, Vol.463 (1), p.309-315

2001

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Comparison of responses of CR-39, PM-355, and CN track detectors to energetic hydrogen-, helium-, nitrogen-, and oxygen-ions

Radiation measurements, 1997, Vol.28 (1), p.207-210

1997

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RBS and ERD study of epitaxial RuO2 films deposited on different single crystal substrates

Vacuum, 2003-03, Vol.70 (2-3), p.313-317

2003

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Mass transfer and doping during electrolyte-plasma treatment of cast iron

Technical physics letters, 2003-04, Vol.29 (4), p.312-315

2003

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Effect of oxygen implantation on ionoluminescence of porous silicon

Journal of luminescence, 1998-12, Vol.80 (1), p.187-192

1998

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Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition

Vacuum, 1998-05, Vol.50 (1), p.103-105

1998

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Properties of amorphous silicon carbide films prepared by PECVD

Vacuum, 1996-10, Vol.47 (10), p.1223-1225

1996

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Accurate efficiency determination of a Si(Li) detector in the Si-K and Au-M absorption edge energy region

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-07, Vol.42 (3), p.346-358

1989

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Investigation of radiation damage in N doped a-SiC : H films annealed by pulsed electron beam

Vacuum, 2000-08, Vol.58 (2), p.428-433

2000

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High-speed plasma jet modification and doping of α-Fe

Technical physics letters, 2001-08, Vol.27 (8), p.619-621

2001

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Using of the high-grade layered structures for the demonstration of the depth resolution of the RBS method

Vacuum, 2001-08, Vol.63 (4), p.501-505

2001

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RBS study of amorphous silicon carbide films deposited by PECVD

Czechoslovak journal of physics, 2004-01, Vol.54 (S3), p.C1006-C1010

2004

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Improvement of wear and hardness of steel by nitrogen implantation

Deposition and properties of nickel oxide films produced by DC reactive magnetron sputtering

Further studies of N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam

Structure and properties of Al2O3 and Al2O3 + Cr2O3 coatings deposited to steel 3 (0.3 wt%C) substrate using pulsed detonation technology

Complementarity of X-ray diffraction and RBS in thin film characterization

Characterization of nitrogen-doped amorphous silicon carbide thin films

Effect of Fe and Zr ion implantation and high-current electron irradiation treatment on chemical and mechanical properties of Ti–V–Al Alloy

Evolution of mechanical properties in tool steel implanted with high energy nitrogen ions

Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD

RBS and optical studies of ion-implanted amorphous silicon carbide layers

Trace elements analyses of zircon sample by integration of the LA-ICP-MS, EDS and RBS methods

Preparation of SrRuO3 films for advanced CMOS metal gates

Effect of γ rays on fast neutron registration in CR-39

Neutron spectrometry method for partial radiative capture cross-section measurements

Comparison of responses of CR-39, PM-355, and CN track detectors to energetic hydrogen-, helium-, nitrogen-, and oxygen-ions

RBS and ERD study of epitaxial RuO2 films deposited on different single crystal substrates

Mass transfer and doping during electrolyte-plasma treatment of cast iron

Effect of oxygen implantation on ionoluminescence of porous silicon

Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition

Properties of amorphous silicon carbide films prepared by PECVD

Accurate efficiency determination of a Si(Li) detector in the Si-K and Au-M absorption edge energy region

Investigation of radiation damage in N doped a-SiC : H films annealed by pulsed electron beam

High-speed plasma jet modification and doping of α-Fe

Using of the high-grade layered structures for the demonstration of the depth resolution of the RBS method

RBS study of amorphous silicon carbide films deposited by PECVD

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