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Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

IEEE electron device letters, 2016-01, Vol.37 (1), p.39-42

2016

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Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3653-3657

2015

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60-3: Distinguished Paper: Oxide Vertical TFTs for the Application to the Ultra High Resolution Display

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.820-822

2016

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Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors

Materials letters, 2024-05, Vol.363, p.136297, Article 136297

2024

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Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator

Journal of alloys and compounds, 2022-02, Vol.893, p.162308, Article 162308

2022

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Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors

ACS applied materials & interfaces, 2023-10, Vol.15 (40), p.47799-47809

2023

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Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors

Materials letters, 2024-01, Vol.355, p.135502, Article 135502

2024

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Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

IEEE electron device letters, 2023-11, Vol.44 (11), p.1849-1852

2023

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Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

Proceedings of the International Display Workshops, 2019-11, p.485

2019

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Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

Proceedings of the International Display Workshops, 2019-11, p.485

2019

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Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

RSC advances, 2019-11, Vol.9 (62), p.36293-363

2019

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Plasma-Enhanced Atomic Layer Deposition Processed SiO sub(2) Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

IEEE electron device letters, 2016-01, Vol.37 (1), p.39-42

2016

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Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size

Advanced materials (Weinheim), 2018-07, Vol.30 (29), p.e1800647-n/a

2018

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Effects of Hydroxyl Group in AlO x Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors

Physica status solidi. A, Applications and materials science, 2019-03, Vol.216 (6)

2019

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Effects of Hydroxyl Group in AlOx Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors

Physica status solidi. A, Applications and materials science, 2019-03, Vol.216 (6), p.n/a

2019

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Self-Assembled Nano–Lotus Pod Metasurface for Light Trapping

ACS photonics, 2021-06, Vol.8 (6), p.1616-1622

2021

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Solution Shearing: Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size (Adv. Mater. 29/2018)

Advanced materials (Weinheim), 2018-07, Vol.30 (29), p.n/a

2018

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Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-10, Vol.11 (41), p.14177-14186

2023

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Ultrathin, Flexible, and Transparent Oxide Thin‐Film Transistors by Delamination and Transfer Methods for Deformable Displays

Advanced materials technologies, 2021-11, Vol.6 (11), p.n/a

2021

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28‐1: Invited Paper: Effect of Channel Defining Layer on the Vertical Oxide TFTs for the Application to the Ultra High Resolution Display

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.389-392

2017

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(Invited) Gate Insulator for High Mobility Oxide TFT

ECS transactions, 2014, Vol.64 (10), p.123-128

2014

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(Invited) Selection of Channel Layer for the Vertical Oxide TFT

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (33), p.2140-2140

2016

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Gate Insulator for High Mobility Oxide TFT

Meeting abstracts (Electrochemical Society), 2014-08, Vol.MA2014-02 (47), p.1914-1914

2014

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N‑Doped Graphene Nanoplatelets as Superior Metal-Free Counter Electrodes for Organic Dye-Sensitized Solar Cells

ACS nano, 2013-06, Vol.7 (6), p.5243-5250

2013

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Triboelectric Energy Harvesting from Highly Conjugated Fused Aromatic Ladder Structure Under Extreme Environmental Conditions

Advanced materials (Weinheim), 2024-05, Vol.36 (19), p.e2311029-e2311029

2024

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Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

60-3: Distinguished Paper: Oxide Vertical TFTs for the Application to the Ultra High Resolution Display

Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors

Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator

Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors

Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors

Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

Plasma-Enhanced Atomic Layer Deposition Processed SiO sub(2) Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size

Effects of Hydroxyl Group in AlO x Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors

Effects of Hydroxyl Group in AlOx Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors

Self-Assembled Nano–Lotus Pod Metasurface for Light Trapping

Solution Shearing: Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size (Adv. Mater. 29/2018)

Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors

Ultrathin, Flexible, and Transparent Oxide Thin‐Film Transistors by Delamination and Transfer Methods for Deformable Displays

28‐1: Invited Paper: Effect of Channel Defining Layer on the Vertical Oxide TFTs for the Application to the Ultra High Resolution Display

(Invited) Gate Insulator for High Mobility Oxide TFT

(Invited) Selection of Channel Layer for the Vertical Oxide TFT

Gate Insulator for High Mobility Oxide TFT

N‑Doped Graphene Nanoplatelets as Superior Metal-Free Counter Electrodes for Organic Dye-Sensitized Solar Cells

Triboelectric Energy Harvesting from Highly Conjugated Fused Aromatic Ladder Structure Under Extreme Environmental Conditions

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