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Defect Generation Mechanism of Epitaxially Grown In Situ Phosphorus‐Doped Silicon on Silicon (111) Substrate

Physica status solidi. A, Applications and materials science, 2020-06, Vol.217 (12), p.n/a

2020

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Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing

Physica status solidi. A, Applications and materials science, 2020-06, Vol.217 (12), p.n/a

2020

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Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant

Materials, 2022-10, Vol.15 (19), p.6918

2022

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Method for contact resistivity measurements on highly phosphorus-doped silicon using a multiline transmission line model

Journal of the Korean Physical Society, 2021, 78(4), , pp.290-296

2021

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Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Nanoscale, 2019-07, Vol.11 (27), p.12871-12877

2019

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Synthesis of highly conformal titanium nitride films via tert-butyl chloride-assisted atomic layer deposition

Applied surface science, 2024-01, Vol.643, p.158670, Article 158670

2024

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Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation

Molecules (Basel, Switzerland), 2020-02, Vol.25 (4), p.785

2020

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Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy

Journal of the Korean Physical Society, 2020, 77(7), , pp.592-597

2020

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Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films

ACS applied electronic materials, 2019-03, Vol.1 (3), p.288-301

2019

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Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

Crystals (Basel), 2022-12, Vol.12 (12), p.1846

2022

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Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Journal of the Korean Physical Society, 2021, 78(6), , pp.516-522

2021

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Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

Journal of the Korean Physical Society, 2021, 78(8), , pp.712-718

2021

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Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (100) by X-ray photoelectron spectroscopy

Applied surface science, 2018-06, Vol.443, p.131-137

2018

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Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing

Applied surface science, 2024-06, Vol.657, p.159756, Article 159756

2024

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Quasicrystalline phase-change memory

Scientific reports, 2020-08, Vol.10 (1), p.13673-13673, Article 13673

2020

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Study on temperature-dependent growth characteristics of germanium oxide film by plasma-enhanced atomic layer deposition

Thin solid films, 2023-06, Vol.775, p.139851, Article 139851

2023

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Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Coatings (Basel), 2021-06, Vol.11 (6), p.654

2021

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Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Materials chemistry and physics, 2013-11, Vol.142 (2-3), p.608-613

2013

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Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

AIP advances, 2019-03, Vol.9 (3), p.035333-035333-6

2019

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Super-conformal TiN thin film deposition by carrier pulse purge atomic layer deposition system: Chamber design optimization with computational fluid dynamics

Thin solid films, 2023-04, Vol.771, p.139758, Article 139758

2023

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Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): a theoretical study

Semiconductor science and technology, 2020-12, Vol.35 (12), p.125005

2020

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Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

AIP advances, 2016-09, Vol.6 (9), p.095114-095114-10

2016

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Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study

Semiconductor science and technology, 2020-06, Vol.35 (6), p.65004

2020

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Characteristics of high-order silane based Si and SiGe epitaxial growth under 600

Journal of crystal growth, 2024-04, Vol.632, p.127642, Article 127642

2024

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Defect Generation Mechanism of Epitaxially Grown In Situ Phosphorus‐Doped Silicon on Silicon (111) Substrate

Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing

Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant

Method for contact resistivity measurements on highly phosphorus-doped silicon using a multiline transmission line model

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Synthesis of highly conformal titanium nitride films via tert-butyl chloride-assisted atomic layer deposition

Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation

Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy

Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films

Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (100) by X-ray photoelectron spectroscopy

Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing

Quasicrystalline phase-change memory

Study on temperature-dependent growth characteristics of germanium oxide film by plasma-enhanced atomic layer deposition

Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

Super-conformal TiN thin film deposition by carrier pulse purge atomic layer deposition system: Chamber design optimization with computational fluid dynamics

Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): a theoretical study

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study

Characteristics of high-order silane based Si and SiGe epitaxial growth under 600

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