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Band-to-band tunneling in carbon nanotube field-effect transistors

Physical review letters, 2004-11, Vol.93 (19), p.196805.1-196805.4, Article 196805

2004

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Toward Nanowire Electronics

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2827-2845

2008

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IEEE_Xplore

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Solid-state electronics, 2007-04, Vol.51 (4), p.572-578

2007

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Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2568-2576

2005

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IEEE_Xplore

Interface Engineering for Steep Slope Cryogenic MOSFETs

IEEE electron device letters, 2022-12, Vol.43 (12), p.2149-2152

2022

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IEEE_Xplore

Field-modulated carrier transport in carbon nanotube transistors

Physical review letters, 2002-09, Vol.89 (12), p.126801-126801, Article 126801

2002

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Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell

Solar energy materials and solar cells, 2019-03, Vol.191, p.422-426

2019

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Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit

IEEE electron device letters, 2008-04, Vol.29 (4), p.372-374

2008

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IEEE_Xplore

Silicon nanowire tunneling field-effect transistors

Applied physics letters, 2008-05, Vol.92 (19), p.193504-193504-3

2008

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High-performance carbon nanotube field-effect transistor with tunable polarities

IEEE transactions on nanotechnology, 2005-09, Vol.4 (5), p.481-489

2005

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IEEE_Xplore

Tunneling versus thermionic emission in one-dimensional semiconductors

Physical review letters, 2004-01, Vol.92 (4), p.048301-048301, Article 048301

2004

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Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission

Applied physics letters, 2017-02, Vol.110 (7)

2017

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Visibility of two-dimensional layered materials on various substrates

Journal of applied physics, 2015-10, Vol.118 (14)

2015

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Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

Applied physics letters, 2002-10, Vol.81 (16), p.3082-3084

2002

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High performance of potassium n-doped carbon nanotube field-effect transistors

Applied physics letters, 2004-05, Vol.84 (18), p.3693-3695

2004

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Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1669-1674

2006

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IEEE_Xplore

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.351-357

2007

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Electrostatic Doping-Controlling the Properties of Carbon-Based FETs With Gates

IEEE transactions on nanotechnology, 2014-11, Vol.13 (6), p.1044-1052

2014

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IEEE_Xplore

Investigations on Field‐Effect Transistors Based on Two‐Dimensional Materials

Annalen der Physik, 2017-11, Vol.529 (11), p.n/a

2017

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Multimode transport in schottky-barrier carbon-nanotube field-effect transistors

Physical review letters, 2004-06, Vol.92 (22), p.226802.1-226802.4, Article 226802

2004

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Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Applied physics letters, 2005-12, Vol.87 (26), p.263505-263505-3

2005

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Spin Qubits Confined to a Silicon Nano-Ridge

Applied sciences, 2019-09, Vol.9 (18), p.3823

2019

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Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

Nanoscale research letters, 2016-11, Vol.11 (1), p.512-512, Article 512

2016

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Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Solid-state electronics, 2009-10, Vol.53 (10), p.1126-1129

2009

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Band-to-band tunneling in carbon nanotube field-effect transistors

Toward Nanowire Electronics

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

Interface Engineering for Steep Slope Cryogenic MOSFETs

Field-modulated carrier transport in carbon nanotube transistors

Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell

Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit

Silicon nanowire tunneling field-effect transistors

High-performance carbon nanotube field-effect transistor with tunable polarities

Tunneling versus thermionic emission in one-dimensional semiconductors

Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission

Visibility of two-dimensional layered materials on various substrates

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

High performance of potassium n-doped carbon nanotube field-effect transistors

Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Electrostatic Doping-Controlling the Properties of Carbon-Based FETs With Gates

Investigations on Field‐Effect Transistors Based on Two‐Dimensional Materials

Multimode transport in schottky-barrier carbon-nanotube field-effect transistors

Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Spin Qubits Confined to a Silicon Nano-Ridge

Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

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