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Insulators for 2D nanoelectronics: the gap to bridge

Nature communications, 2020-07, Vol.11 (1), p.3385-3385, Article 3385

2020

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Transistors based on two-dimensional materials for future integrated circuits

Nature electronics, 2021-11, Vol.4 (11), p.786-799

2021

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The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Nature electronics, 2021-02, Vol.4 (2), p.98-108

2021

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FinFETs based on layered 2D semiconductors

Science China materials, 2023-09, Vol.66 (9), p.3759-3760

2023

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Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

Nanomaterials (Basel, Switzerland), 2022-10, Vol.12 (20), p.3548

2022

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An ab initio study on resistance switching in hexagonal boron nitride

NPJ 2D materials and applications, 2022-09, Vol.6 (1), p.1-10, Article 58

2022

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A Physical Model for the Hysteresis in MoS2 Transistors

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.972-978

2018

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Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

NPJ 2D materials and applications, 2024-07, Vol.8 (1), p.44-9, Article 44

2024

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Fluoride dielectrics for 2D transistors

Nature nanotechnology, 2024-07, Vol.19 (7), p.880-881

2024

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Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1163-1169

2019

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Enhancing the electrical stability of two-dimensional transistors

Nature electronics, 2022-06, Vol.5 (6), p.329-330

2022

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(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

ECS transactions, 2023-05, Vol.111 (1), p.219-228

2023

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Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

IEEE electron device letters, 2017-12, Vol.38 (12), p.1763-1766

2017

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Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

ACS nano, 2018-06, Vol.12 (6), p.5368-5375

2018

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Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Advanced materials (Weinheim), 2022-12, Vol.34 (48), p.e2201082-n/a

2022

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Single- Versus Multi-Step Trap Assisted Tunneling Currents-Part I: Theory

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4479-4485

2022

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Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.884-889

2024

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Compact I-V model for back-gated and double-gated TMD FETs

Solid-state electronics, 2023-09, Vol.207, p.108702, Article 108702

2023

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The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors

2d materials, 2016-07, Vol.3 (3)

2016

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Dielectric Properties of Ultrathin CaF2 Ionic Crystals

Advanced materials (Weinheim), 2020-08, Vol.32 (34), p.e2002525-n/a

2020

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Finding Suitable Gate Insulators for Reliable 2D FETs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.1-10

2022

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Native high-k oxides for 2D transistors

Nature electronics, 2020-08, Vol.3 (8), p.442-443

2020

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Inorganic molecular crystals for 2D electronics

Nature electronics, 2021-12, Vol.4 (12), p.870-871

2021

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All van der Waals Semiconducting PtSe 2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Nano letters, 2024-05

2024

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Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Microelectronics and reliability, 2023-07, Vol.146, p.115004, Article 115004

2023

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Insulators for 2D nanoelectronics: the gap to bridge

Transistors based on two-dimensional materials for future integrated circuits

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

FinFETs based on layered 2D semiconductors

Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

An ab initio study on resistance switching in hexagonal boron nitride

A Physical Model for the Hysteresis in MoS2 Transistors

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

Fluoride dielectrics for 2D transistors

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Enhancing the electrical stability of two-dimensional transistors

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Single- Versus Multi-Step Trap Assisted Tunneling Currents-Part I: Theory

Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors

Compact I-V model for back-gated and double-gated TMD FETs

The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors

Dielectric Properties of Ultrathin CaF2 Ionic Crystals

Finding Suitable Gate Insulators for Reliable 2D FETs

Native high-k oxides for 2D transistors

Inorganic molecular crystals for 2D electronics

All van der Waals Semiconducting PtSe 2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

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