UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Scanning voltage microscopy on buried heterostructure multiquantum-well lasers: identification of a diode current leakage path

IEEE journal of quantum electronics, 2004-02, Vol.40 (2), p.118-122

2004

Volltextzugriff (PDF)

Characterization of interfacial dopant layer for high-purity InP grown by MOCVD

Journal of crystal growth, 1997-12, Vol.182 (1-2), p.23-29

1997

Volltextzugriff (PDF)

Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's)

IEEE photonics technology letters, 1993-09, Vol.5 (9), p.1044-1046

1993

Volltextzugriff (PDF)

Generating constant weight binary codes

International journal of mathematical education in science and technology, 2008-01, Vol.39 (1), p.115-124

Knight, DG

2008

Volltextzugriff (PDF)

High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

IEEE photonics technology letters, 1993-06, Vol.5 (6), p.672-674

1993

Volltextzugriff (PDF)

Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings

IEEE photonics technology letters, 1995-11, Vol.7 (11), p.1330-1332

1995

Volltextzugriff (PDF)

Matrix spectroscopy in the gas phase: IR spectroscopy of argon clusters containing SF6 or CH3F

Chemical physics letters, 1983-05, Vol.97 (2), p.155-160

1983

Volltextzugriff (PDF)

Incorporation and activation of Fe in InP using low pressure MOCVD

Journal of crystal growth, 1992-12, Vol.125 (3), p.449-456

1992

Volltextzugriff (PDF)

Renal function and blood flow in elective aortic surgery

Knight, D.G

1983

Volltextzugriff (PDF)

Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes

IEEE photonics technology letters, 1994-05, Vol.6 (5), p.632-634

1994

Volltextzugriff (PDF)

Determinants and recursion

International journal of mathematical education in science and technology, 1988-01, Vol.19 (1), p.67-71

Knight, D.G.

1988

Volltextzugriff (PDF)

Novel polarisation independent tunable optical filter with yield compensation after fabrication

Electronics letters, 1995-02, Vol.31 (3), p.231-232, Article 231

1995

Volltextzugriff (PDF)

Electrically pumped circular-grating distributed-Bragg-reflector lasers

IEEE photonics technology letters, 1992-09, Vol.4 (9), p.960-963

1992

Volltextzugriff (PDF)

Impact penetration of sand. Technical note

International journal of rock mechanics and mining sciences & geomechanics abstracts, 1981-02, Vol.18 (1), p.18

Knight, D.G.

1981

Volltextzugriff (PDF)

Impact penetration of sand. Technical note : Can Geotech J, V17, N1, Feb 1980, P127–131

International journal of rock mechanics and mining sciences & geomechanics abstracts, 1981, Vol.18 (1), p.18-18

Knight, D.G.

1981

Volltextzugriff (PDF)

Method for reliable liquid phase epitaxial growth of semi-insulating InP doped with Ti and Zn

Journal of crystal growth, 1990-04, Vol.102 (1), p.249-254

1990

Volltextzugriff (PDF)

Some problems in rheometry

Knight, D.G

1974

Volltextzugriff (PDF)

Growth of semi-insulating InGaAsP alloys using low-pressure MOCVD

Journal of crystal growth, 1992-11, Vol.124 (1), p.352-357

1992

Volltextzugriff (PDF)

Anagrams and Recursion

Teaching mathematics and its applications, 1986, Vol.5 (3), p.138-140

KNIGHT, D.G.

1986

Volltextzugriff (PDF)

InGaAsP/InP distributed feedback laser wafers grown by an interrupted liquid phase epitaxy technique

Journal of crystal growth, 1988-10, Vol.92 (3), p.659-662

1988

Volltextzugriff (PDF)

Optimization of selective area epitaxy for fabrication of circular grating distributed-Bragg-reflector surface-emitting lasers

Journal of crystal growth, 1993-11, Vol.134 (1), p.19-28

1993

Volltextzugriff (PDF)

Study of supercooling behaviour of InGaAsP solutions for growth of high quality InGaAsP/InGaAs(P) layers on (100) InP

Journal of crystal growth, 1987-11, Vol.85 (3), p.363-376

1987

Volltextzugriff (PDF)

Matrix spectroscopy in the gas phase: IR spectroscopy of argon clusters containing SF 6 or CH 3F

Chemical physics letters, 1983, Vol.97 (2), p.155-160

1983

Volltextzugriff (PDF)

Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD

Journal of crystal growth, 1991, Vol.107 (1), p.221-225

1991

Volltextzugriff (PDF)

Identification of the source of pinhole defects in InGaAsP/InP laser wafers

Journal of crystal growth, 1986-12, Vol.78 (3), p.549-557

Knight, D.G.

1986

Volltextzugriff (PDF)

1 – 25 von 77

Menü

Weitere Dienste

Einstellungen

Scanning voltage microscopy on buried heterostructure multiquantum-well lasers: identification of a diode current leakage path

Characterization of interfacial dopant layer for high-purity InP grown by MOCVD

Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's)

Generating constant weight binary codes

High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings

Matrix spectroscopy in the gas phase: IR spectroscopy of argon clusters containing SF6 or CH3F

Incorporation and activation of Fe in InP using low pressure MOCVD

Renal function and blood flow in elective aortic surgery

Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes

Determinants and recursion

Novel polarisation independent tunable optical filter with yield compensation after fabrication

Electrically pumped circular-grating distributed-Bragg-reflector lasers

Impact penetration of sand. Technical note

Impact penetration of sand. Technical note : Can Geotech J, V17, N1, Feb 1980, P127–131

Method for reliable liquid phase epitaxial growth of semi-insulating InP doped with Ti and Zn

Some problems in rheometry

Growth of semi-insulating InGaAsP alloys using low-pressure MOCVD

Anagrams and Recursion

InGaAsP/InP distributed feedback laser wafers grown by an interrupted liquid phase epitaxy technique

Optimization of selective area epitaxy for fabrication of circular grating distributed-Bragg-reflector surface-emitting lasers

Study of supercooling behaviour of InGaAsP solutions for growth of high quality InGaAsP/InGaAs(P) layers on (100) InP

Matrix spectroscopy in the gas phase: IR spectroscopy of argon clusters containing SF 6 or CH 3F

Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD

Identification of the source of pinhole defects in InGaAsP/InP laser wafers

Suchergebnisse filtern