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Incorporating advanced language models into the P300 speller using particle filtering

Journal of neural engineering, 2015-08, Vol.12 (4), p.046018-046018

2015

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Radiation-balanced silica fiber laser

Optica, 2021-06, Vol.8 (6), p.830

2021

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Growth of Ge on Si(100) and Si(113) studied by STM

Surface science, 1992-04, Vol.265 (1), p.156-167

1992

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An STM study of the chemisorption of C2H4 on Si(001)(2 × 1)

Surface science, 1993-03, Vol.284 (3), p.247-256

1993

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Structure of Si(113) determined by scanning tunneling microscopy

Physical review letters, 1991-04, Vol.66 (13), p.1733-1736

1991

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The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si

Journal of applied physics, 1994-09, Vol.76 (5), p.2697-2702

1994

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Misfit dislocations in ZnSe grown on vicinal Si(001) substrates

Applied physics letters, 1994-08, Vol.65 (7), p.869-871

1994

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Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth

Surface science, 1986-02, Vol.166 (2), p.512-538

1986

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Adsorption and desorption kinetics of In on Si(100)

Surface science, 1989-03, Vol.209 (3), p.314-334

1989

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STM imaging of molecules: factors affecting their reliable imaging

Surface science, 1992-04, Vol.265 (1), p.139-155

1992

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An STM study of the Si(001)-(21) and GaAs(001)-(24) surfaces

Nanotechnology, 1992-07, Vol.3 (3), p.113-122

1992

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STM imaging of molecules on well defined substrates

Journal of physics. Condensed matter, 1991-11, Vol.3 (S), p.S11-S16

1991

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Reconstruction of Si(113) by adsorption of atomic hydrogen

Journal of physics. Condensed matter, 1991-11, Vol.3 (S), p.S133-S138

1991

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Incorporation of accelerated low-energy (50-500 eV)In+ ions in Si(100) films during growth by molecular-beam epitaxy

Journal of applied physics, 1989, Vol.65 (1), p.172-179

1989

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Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy

Journal of applied physics, 1989-02, Vol.65 (3), p.1189-1197

1989

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Quantitative voltage-dependent STM image simulations for semiconductors

Ultramicroscopy, 1992, Vol.42 (A), p.801-808

1992

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Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

Applied physics letters, 1988-10, Vol.53 (18), p.1732-1734

1988

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Chemisorption of organic adsorbates on silicon and gold studied by scanning tunnelling microscopy

Faraday discussions, 1992, Vol.94, p.199

1992

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Indium incorporation during the growth of (100) Si by molecular beam epitaxy: surface segregation and reconstruction

Applied physics letters, 1984-01, Vol.45 (6), p.689-691

1984

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Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy

Thin solid films, 1989-12, Vol.183 (1), p.281-297

1989

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Incorporation of in by recoil implantation during MBE growth of Si(100)

Surface science, 1989-01, Vol.214 (1), p.149-164

1989

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Threading Dislocation Densities in GaAs Grown on Reduced Area Si Substrates

MRS proceedings, 1993, Vol.308, Article 417

1993

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Carrier lifetime in MBE grown Si:Sb and Si:In layers measured by the transient grating method

Semiconductor science and technology, 1988-11, Vol.3 (11), p.1116-1121

1988

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The influence of defects on device performance of MBE-grown Si homojunction and strained Si1-xGex/Si heterostructures

Journal of electronic materials, 1990-10, Vol.19 (10), p.1033-1041

1990

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Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1985-05, Vol.3 (3), p.855-859

1985

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Incorporating advanced language models into the P300 speller using particle filtering

Radiation-balanced silica fiber laser

Growth of Ge on Si(100) and Si(113) studied by STM

An STM study of the chemisorption of C2H4 on Si(001)(2 × 1)

Structure of Si(113) determined by scanning tunneling microscopy

The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si

Misfit dislocations in ZnSe grown on vicinal Si(001) substrates

Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth

Adsorption and desorption kinetics of In on Si(100)

STM imaging of molecules: factors affecting their reliable imaging

An STM study of the Si(001)-(21) and GaAs(001)-(24) surfaces

STM imaging of molecules on well defined substrates

Reconstruction of Si(113) by adsorption of atomic hydrogen

Incorporation of accelerated low-energy (50-500 eV)In+ ions in Si(100) films during growth by molecular-beam epitaxy

Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy

Quantitative voltage-dependent STM image simulations for semiconductors

Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

Chemisorption of organic adsorbates on silicon and gold studied by scanning tunnelling microscopy

Indium incorporation during the growth of (100) Si by molecular beam epitaxy: surface segregation and reconstruction

Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy

Incorporation of in by recoil implantation during MBE growth of Si(100)

Threading Dislocation Densities in GaAs Grown on Reduced Area Si Substrates

Carrier lifetime in MBE grown Si:Sb and Si:In layers measured by the transient grating method

The influence of defects on device performance of MBE-grown Si homojunction and strained Si1-xGex/Si heterostructures

Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy

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