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Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Nano letters, 2016-12, Vol.16 (12), p.7685-7689

2016

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Geometric Control of Universal Hydrodynamic Flow in a Two-Dimensional Electron Fluid

Physical review. X, 2021-08, Vol.11 (3), p.031030, Article 031030

2021

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Strong and Tunable Spin–Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices

Nano letters, 2016-06, Vol.16 (6), p.3768-3773

2016

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Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

Nano letters, 2015-01, Vol.15 (1), p.16-20

2015

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Formation of Artificial Fermi Surfaces with a Triangular Superlattice on a Conventional Two-Dimensional Electron Gas

Nano letters, 2023-03, Vol.23 (5), p.1705-1710

2023

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Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/Al x Ga 1− x As Transistors with High Electron Mobility

Advanced functional materials, 2022-01, Vol.32 (3)

2022

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Recent advances on strong light-matter coupling in atomically thin TMDC semiconductor materials

Journal of optics (2010), 2022-05, Vol.24 (5), p.53001

2022

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Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/AlxGa1−xAs Transistors with High Electron Mobility

Advanced functional materials, 2022-01, Vol.32 (3), p.n/a

2022

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Thickness-dependent electronic structure in WTe2 thin films

Physical review. B, 2018-07, Vol.98 (3), p.035115

2018

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One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy

Physical review. B, Condensed matter and materials physics, 2007-08, Vol.76 (8), Article 085403

2007

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Thickness-dependent electronic structure in WTe 2 thin films

Physical review. B, 2018-07, Vol.98 (3), Article 035115

2018

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Mapping the anisotropy of the Zeeman spin splitting of one-dimensional heavy holes in a GaAs quantum point contact

2014 Conference on Optoelectronic and Microelectronic Materials & Devices, 2014, p.94-97

2014

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Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

Materials science forum, 2012-01, Vol.700, p.93-95

2012

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Absorption enhancement of WS2 monolayer based on Si3 N4 nanowires

2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2020, p.1-3

2020

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Fabrication of undoped AlGaAs/GaAs electron quantum dots

2010 International Conference on Nanoscience and Nanotechnology, 2010, p.326-328

2010

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The use of economic engineering in the context of strategic enterprise management

Laplage em Revista, 2021-08, Vol.7 (Extra-E), p.427-436

2021

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Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Geometric Control of Universal Hydrodynamic Flow in a Two-Dimensional Electron Fluid

Strong and Tunable Spin–Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices

Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

Formation of Artificial Fermi Surfaces with a Triangular Superlattice on a Conventional Two-Dimensional Electron Gas

Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/Al x Ga 1− x As Transistors with High Electron Mobility

Recent advances on strong light-matter coupling in atomically thin TMDC semiconductor materials

Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/AlxGa1−xAs Transistors with High Electron Mobility

Thickness-dependent electronic structure in WTe2 thin films

One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy

Thickness-dependent electronic structure in WTe 2 thin films

Mapping the anisotropy of the Zeeman spin splitting of one-dimensional heavy holes in a GaAs quantum point contact

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

Absorption enhancement of WS2 monolayer based on Si3 N4 nanowires

Fabrication of undoped AlGaAs/GaAs electron quantum dots

The use of economic engineering in the context of strategic enterprise management

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