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InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

Scientific reports, 2018-03, Vol.8 (1), p.5299-6, Article 5299

2018

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Impurity-assisted terahertz photoluminescence in compensated quantum wells

Journal of applied physics, 2019-11, Vol.126 (17)

2019

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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.355-361

2020

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Interaction of surface plasmon-phonon polaritons with terahertz radiation in heavily doped GaAs epilayers

Journal of physics. Condensed matter, 2019-03, Vol.31 (10), p.105002-105002

2019

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Current—voltage characteristics of connecting tunnel diodes at temperature heating up to 80°C

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12194

2021

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Luminescence in p–i–n Structures with Compensated Quantum Wells

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.375-385

2024

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Investigation of characteristics of GaAs/AlGaAs p-i-n connecting tunnel diodes

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12185

2020

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Characteristics of double-cascade photodiodes based on p-i-n AlGaAs/GaAs diodes connected by n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12021

2021

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Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

JETP letters, 2021-02, Vol.113 (4), p.252-258

2021

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Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range

JETP letters, 2019-02, Vol.109 (3), p.145-149

2019

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Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

Semiconductor science and technology, 2017-04, Vol.32 (4), p.45012

2017

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CdTe/Zn(Mg)(Se)Te quantum dots for single photon emitters grown by MBE

Journal of crystal growth, 2017-11, Vol.477, p.127-130

2017

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Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III–V/II–VI Heterostructure

Journal of experimental and theoretical physics, 2018-02, Vol.126 (2), p.210-216

2018

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Study of PV characteristics of AlxGa1-xAs/GaAs photodiodes

Journal of physics. Conference series, 2018, Vol.993 (1)

2018

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Emission properties of individual InAs/Al0.44Ga0.56As quantum dots

Journal of physics. Conference series, 2017, Vol.917 (6)

2017

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Single photon emitters based on hybrid microcavities with InAs/AlXGa1-XAs quantum dots

Journal of physics. Conference series, 2018, Vol.1038 (1)

2018

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Experimental study of surface plasmon-phonon polaritons in GaAs-based microstructures

Journal of physics. Conference series, 2018-03, Vol.993 (1), p.12012

2018

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Single-photon sources of visible light

Journal of physics. Conference series, 2017-11, Vol.917 (2), p.22001

2017

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Single-Photon Emission from InAs/AlGaAs Quantum Dots

Physics of the solid state, 2018-04, Vol.60 (4), p.691-694

2018

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Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures

Physica Status Solidi. B: Basic Solid State Physics, 2016-08, Vol.253 (8), p.1503-1506

2016

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Red Single-Photon Emission from InAs/AlGaAs Quantum Dots

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.511-513

2018

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Single photon emission from charged excitons in CdTe/ZnTe quantum dots

Journal of physics. Conference series, 2017-11, Vol.917 (6), p.62033

2017

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Violet-green electrically pumped laser converters with output power over 150 mW

Electronics letters, 2012-01, Vol.48 (2), p.118-119

2012

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Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.503-506

2016

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Influence of dynamic screening effect on coherent terahertz radiation from biased GaAs AlGaAs quantum wells

Semiconductor science and technology, 2013-10, Vol.28 (10), p.105012

2013

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InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

Impurity-assisted terahertz photoluminescence in compensated quantum wells

Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Interaction of surface plasmon-phonon polaritons with terahertz radiation in heavily doped GaAs epilayers

Current—voltage characteristics of connecting tunnel diodes at temperature heating up to 80°C

Luminescence in p–i–n Structures with Compensated Quantum Wells

Investigation of characteristics of GaAs/AlGaAs p-i-n connecting tunnel diodes

Characteristics of double-cascade photodiodes based on p-i-n AlGaAs/GaAs diodes connected by n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes

Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

CdTe/Zn(Mg)(Se)Te quantum dots for single photon emitters grown by MBE

Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III–V/II–VI Heterostructure

Study of PV characteristics of AlxGa1-xAs/GaAs photodiodes

Emission properties of individual InAs/Al0.44Ga0.56As quantum dots

Single photon emitters based on hybrid microcavities with InAs/AlXGa1-XAs quantum dots

Experimental study of surface plasmon-phonon polaritons in GaAs-based microstructures

Single-photon sources of visible light

Single-Photon Emission from InAs/AlGaAs Quantum Dots

Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures

Red Single-Photon Emission from InAs/AlGaAs Quantum Dots

Single photon emission from charged excitons in CdTe/ZnTe quantum dots

Violet-green electrically pumped laser converters with output power over 150 mW

Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer

Influence of dynamic screening effect on coherent terahertz radiation from biased GaAs AlGaAs quantum wells

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