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Modeling the Structure of an Oxide Solar Cell

Journal of communications technology & electronics, 2022-12, Vol.67 (Suppl 1), p.S108-S114

2022

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Plasma Profiling of LiNbO3 Film for the Formation of Piezoelectric Energy Converters

Russian microelectronics, 2024, Vol.53 (2), p.117-122

2024

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Plasma surface treatment of local modify silicon plates

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12033

2021

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Study of the effect of carbon-containing gas pressure on the geometric parameters of an array of carbon nanostructures

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22035

2018

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Research of using plasma methods for formation field emitters based on carbon nanoscale structures

Journal of physics. Conference series, 2018-12, Vol.1124 (7), p.71020

2018

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Application of carbon nanoscale materials in instrument structures sensitive to the gas atmosphere

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12027

2020

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Critical pressure during the formation of carbon nanotubes by the method of plasma chemical vapor deposition

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12035

2019

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Formation of catalytic centers for the growth of carbon nanostructures for nanophotonics devices

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12164

2019

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Investigation of the influence of parameters of nanoscale profiling of the surface of GaAs structures by a combination of local anodic oxidation and plasma chemical etching methods

Journal of physics. Conference series, 2018-12, Vol.1124 (7), p.71019

2018

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Formation of metal catalytic centers from atomic flows of matter for the growth of carbon nanostructures using PECVD method

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12026

2020

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Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

Journal of physics. Conference series, 2018-12, Vol.1124 (4), p.41024

2018

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Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature

Russian microelectronics, 2023-08, Vol.52 (4), p.297-302

2023

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The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge

Journal of physics. Conference series, 2017-11, Vol.917 (9), p.92005

2017

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Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical Etching

Russian microelectronics, 2022-08, Vol.51 (4), p.236-242

2022

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Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22018

2018

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Nanosized Modification of the Silicon Surface by the Method of Focused Ion Beams

Russian microelectronics, 2022-06, Vol.51 (3), p.126-133

2022

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Formation of carbon nanoscale elements of vacuum microelectronics by plasma treatment of SiC

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12028

2020

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Study of Silicon Etching Modes in Combined Plasma Discharge for the Formation of Optoelectronic Structures

Bulletin of the Russian Academy of Sciences. Physics, 2022-12, Vol.86 (Suppl 1), p.S96-S99

2022

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Dissociation and synthesis of target components during laser ablation of LiNbO3

Journal of physics. Conference series, 2019-12, Vol.1410 (1)

2019

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Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

Journal of physics. Conference series, 2017, Vol.917 (3)

2017

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Application of the atomic layer etching technique for the formation of SiC-based field emitters

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12041

2019

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Influence of two-stage growth during the formation of GaAs/Si heterostructures for the creation of optoelectronic devices

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12030

2019

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Terahertz All-Dielectric Metalens: Design and Fabrication Features

Russian microelectronics, 2023-12, Vol.52 (Suppl 1), p.S145-S150

2023

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Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12036

2019

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Application of the Atomic Layer Etching technique to remove broken layers after plasma-etched GaAs surface treatment

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12199

2020

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Modeling the Structure of an Oxide Solar Cell

Plasma Profiling of LiNbO3 Film for the Formation of Piezoelectric Energy Converters

Plasma surface treatment of local modify silicon plates

Study of the effect of carbon-containing gas pressure on the geometric parameters of an array of carbon nanostructures

Research of using plasma methods for formation field emitters based on carbon nanoscale structures

Application of carbon nanoscale materials in instrument structures sensitive to the gas atmosphere

Critical pressure during the formation of carbon nanotubes by the method of plasma chemical vapor deposition

Formation of catalytic centers for the growth of carbon nanostructures for nanophotonics devices

Investigation of the influence of parameters of nanoscale profiling of the surface of GaAs structures by a combination of local anodic oxidation and plasma chemical etching methods

Formation of metal catalytic centers from atomic flows of matter for the growth of carbon nanostructures using PECVD method

Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature

The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge

Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical Etching

Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface

Nanosized Modification of the Silicon Surface by the Method of Focused Ion Beams

Formation of carbon nanoscale elements of vacuum microelectronics by plasma treatment of SiC

Study of Silicon Etching Modes in Combined Plasma Discharge for the Formation of Optoelectronic Structures

Dissociation and synthesis of target components during laser ablation of LiNbO3

Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

Application of the atomic layer etching technique for the formation of SiC-based field emitters

Influence of two-stage growth during the formation of GaAs/Si heterostructures for the creation of optoelectronic devices

Terahertz All-Dielectric Metalens: Design and Fabrication Features

Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

Application of the Atomic Layer Etching technique to remove broken layers after plasma-etched GaAs surface treatment

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