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Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Physical review. B, Condensed matter and materials physics, 2009-10, Vol.80 (15), Article 155430

2009

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Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling

Journal of applied physics, 2010-04, Vol.107 (8), p.084507-084507-6

2010

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Silicon quantum processor with robust long-distance qubit couplings

Nature communications, 2017-09, Vol.8 (1), p.450-11, Article 450

2017

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Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

IEEE electron device letters, 2009-06, Vol.30 (6), p.602-604

2009

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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Scientific reports, 2016-06, Vol.6 (1), p.28515-28515, Article 28515

2016

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Robust mode space approach for atomistic modeling of realistically large nanowire transistors

Journal of applied physics, 2018-01, Vol.123 (4)

2018

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Complementary Black Phosphorus Tunneling Field-Effect Transistors

ACS nano, 2019-01, Vol.13 (1), p.377-385

2019

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Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices

Journal of applied physics, 2019-04, Vol.125 (14)

2019

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Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

IEEE journal on exploratory solid-state computational devices and circuits, 2015-12, Vol.1, p.12-18

2015

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A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Journal of applied physics, 2015-10, Vol.118 (16)

2015

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Spin blockade and exchange in Coulomb-confined silicon double quantum dots

Nature nanotechnology, 2014-06, Vol.9 (6), p.430-435

2014

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Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

IEEE electron device letters, 2010-06, Vol.31 (6), p.621-623

2010

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Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

IEEE transactions on nanotechnology, 2018-03, Vol.17 (2), p.293-298

2018

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Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Journal of physics. Condensed matter, 2007-01, Vol.19 (3), p.036203-036203 (14)

2007

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MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films

ACS applied materials & interfaces, 2019-08, Vol.11 (31), p.28345-28351

2019

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Bandstructure Effects in Silicon Nanowire Electron Transport

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1286-1297

2008

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Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

NPJ 2D materials and applications, 2019-11, Vol.3 (1), Article 43

2019

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Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

Physical review. B, Condensed matter and materials physics, 2011-09, Vol.84 (11), Article 115321

2011

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Practical application of zone-folding concepts in tight-binding calculations

Physical review. B, Condensed matter and materials physics, 2005-03, Vol.71 (11), p.115215.1-115215.6, Article 115215

2005

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Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

Physical review. B, Condensed matter and materials physics, 2004-01, Vol.69 (4), Article 045316

2004

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Non-equilibrium Green's functions method: Non-trivial and disordered leads

Applied physics letters, 2014-11, Vol.105 (21)

2014

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An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

Journal of applied physics, 2014-03, Vol.115 (12)

2014

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Performance Comparisons of III-V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2107-2114

2012

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Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

Applied physics letters, 2010-12, Vol.97 (26), p.261106-261106-3

2010

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Atomistic study of electronic structure of PbSe nanowires

Applied physics letters, 2011-05, Vol.98 (21), p.212105-212105-3

2011

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Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling

Silicon quantum processor with robust long-distance qubit couplings

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Robust mode space approach for atomistic modeling of realistically large nanowire transistors

Complementary Black Phosphorus Tunneling Field-Effect Transistors

Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Spin blockade and exchange in Coulomb-confined silicon double quantum dots

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films

Bandstructure Effects in Silicon Nanowire Electron Transport

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

Practical application of zone-folding concepts in tight-binding calculations

Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

Non-equilibrium Green's functions method: Non-trivial and disordered leads

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

Performance Comparisons of III-V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

Atomistic study of electronic structure of PbSe nanowires

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