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Quantum simulation of the Hubbard model with dopant atoms in silicon

Nature communications, 2016-04, Vol.7 (1), p.11342-11342, Article 11342

2016

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Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

IEEE electron device letters, 2009-06, Vol.30 (6), p.602-604

2009

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IEEE_Xplore

Ohm's Law Survives to the Atomic Scale

Science (American Association for the Advancement of Science), 2012-01, Vol.335 (6064), p.64-67

2012

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Spatially resolving valley quantum interference of a donor in silicon

Nature materials, 2014-06, Vol.13 (6), p.605-610

2014

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Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

Nature communications, 2013-06, Vol.4 (1), p.2069-2069, Article 2069

2013

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Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures

New journal of physics, 2011-01, Vol.13 (1), p.013009

2011

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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D-Part I: Models and Benchmarks

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2079-2089

2007

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IEEE_Xplore

Bandstructure Effects in Silicon Nanowire Electron Transport

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1286-1297

2008

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IEEE_Xplore

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Nature physics, 2008-06, Vol.4 (8), p.656-661

2008

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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Nature physics, 2008-08, Vol.4 (8), p.656-661

2008

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On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1589-1595

2005

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IEEE_Xplore

Efficient and realistic device modeling from atomic detail to the nanoscale

Journal of computational electronics, 2013-12, Vol.12 (4), p.592-600

2013

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A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1782-1788

2006

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IEEE_Xplore

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D-Part II: Applications

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2090-2099

2007

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IEEE_Xplore

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1371-1380

2011

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IEEE_Xplore

Transistor roadmap projection using predictive full-band atomistic modeling

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

Applied physics letters, 2016-03, Vol.108 (11)

2016

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Computing entries of the inverse of a sparse matrix using the FIND algorithm

Journal of computational physics, 2008-11, Vol.227 (22), p.9408-9427

2008

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Bandstructure Effects in Silicon Nanowire Hole Transport

IEEE transactions on nanotechnology, 2008-11, Vol.7 (6), p.710-719

2008

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IEEE_Xplore

Electronic properties of silicon nanowires

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1097-1103

2005

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IEEE_Xplore

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

IEEE transactions on nanotechnology, 2009-05, Vol.8 (3), p.330-344

2009

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IEEE_Xplore

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

Applied physics letters, 2015-05, Vol.106 (20)

2015

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Band-Structure Effects on the Performance of III-V Ultrathin-Body SOI MOSFETs

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1116-1122

2008

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IEEE_Xplore

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

IEEE electron device letters, 2011-03, Vol.32 (3), p.255-257

2011

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IEEE_Xplore

Optimization of edge state velocity in the integer quantum Hall regime

Physical review. B, 2018-02, Vol.97 (8), Article 085302

2018

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Quantum simulation of the Hubbard model with dopant atoms in silicon

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Ohm's Law Survives to the Atomic Scale

Spatially resolving valley quantum interference of a donor in silicon

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D-Part I: Models and Benchmarks

Bandstructure Effects in Silicon Nanowire Electron Transport

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors

Efficient and realistic device modeling from atomic detail to the nanoscale

A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D-Part II: Applications

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Transistor roadmap projection using predictive full-band atomistic modeling

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

Computing entries of the inverse of a sparse matrix using the FIND algorithm

Bandstructure Effects in Silicon Nanowire Hole Transport

Electronic properties of silicon nanowires

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

Band-Structure Effects on the Performance of III-V Ultrathin-Body SOI MOSFETs

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Optimization of edge state velocity in the integer quantum Hall regime

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