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Effect of precursor stacking order and sulfurization temperature on compositional homogeneity of CZTS thin films

Thin solid films, 2016-09, Vol.615, p.402-408

2016

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12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Analysis of Cu(In,Ga)(S,Se) 2 thin-film solar cells by means of electron microscopy

Solar energy materials and solar cells, 2011-06, Vol.95 (6), p.1452-1462

2011

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Stability of plasmonic metal nanoparticles integrated in the back contact of ultra-thin Cu(In,Ga)S2 solar cells

Thin solid films, 2013-01, Vol.527, p.308-313

2013

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Electro deposited In2S3 buffer layers for CuInS2 solar cells

Solar energy materials and solar cells, 2008-10, Vol.92 (10), p.1274-1278

2008

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CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

Progress in photovoltaics, 2013-01, Vol.21 (1), p.88-93

2013

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Solar cells based on CuInS2—an overview

Thin solid films, 2005-06, Vol.480-481 (Complete), p.509-514

2005

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Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S2 based solar cells

Applied physics letters, 2009-11, Vol.95 (21)

2009

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Study of CuInS2/ZnS/ZnO solar cells, with chemically deposited ZnS buffer layers from acidic solutions

Solar energy materials and solar cells, 2008-03, Vol.92 (3), p.302-306

2008

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Highly-efficient Cd-free CuInS2 thin-film solar cells and mini-modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process

Progress in photovoltaics, 2006-09, Vol.14 (6), p.499-511

2006

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Depth profiling of a CdS buffer layer on CuInS2 measured with X-ray photoelectron spectroscopy during removal by HCl etching

Thin solid films, 2012-01, Vol.520 (7), p.2829-2832

2012

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DC reactive sputtering of aluminium doped zinc oxide films for solar modules controlled by target voltage

Thin solid films, 2009-12, Vol.518 (4), p.1204-1207

2009

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CuInS2 based thin film photovoltaics

Solar energy, 2004-01, Vol.77 (6), p.777-784

2004

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CuInS2-based thin film solar cells with sputtered (Zn,Mg)O buffer

Thin solid films, 2009-12, Vol.518 (4), p.1157-1159

2009

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Copper indium disulfide solar cell absorbers prepared in a one-step process by reactive magnetron sputtering from copper and indium targets

Thin solid films, 2002-06, Vol.413 (1), p.92-97

2002

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Reactive sputtering of ZnO/ZnO:Al contacts for chalcopyrite solar modules

Thin solid films, 2011-12, Vol.520 (4), p.1295-1298

2011

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Cu2ZnSnS4-based thin films and solar cells by rapid thermal annealing processing

Thin solid films, 2017-04, Vol.628, p.1-6

2017

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Efficient CuInS2 thin-film solar cells prepared by a sequential process

Semiconductor science and technology, 1998-12, Vol.13 (12), p.1456-1458

1998

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Combined electron backscatter diffraction and cathodoluminescence measurements on CuInS2/Mo/glass stacks and CuInS2 thin-film solar cells

Journal of applied physics, 2010-01, Vol.107 (1)

2010

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Study of CUInS2/buffer/ZnO solar cells, with chemically deposited ZnS-In2S3 buffer layers

Thin solid films, 2007-05, Vol.515 (15), p.6036-6040

2007

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12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Influence of precursor stacking on the absorber growth in Cu(In,Ga)S2 based solar cells prepared by a rapid thermal process

Thin solid films, 2011-08, Vol.519 (21), p.7189-7192

2011

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The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface – Impact of post-annealing

Chemical physics letters, 2006-12, Vol.433 (1-3), p.71-74

2006

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Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

Thin solid films, 2017-04, Vol.628, p.1-6

2017

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12.6% efficient CdS/Cu(In,Ga)S 2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Effect of precursor stacking order and sulfurization temperature on compositional homogeneity of CZTS thin films

12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Analysis of Cu(In,Ga)(S,Se) 2 thin-film solar cells by means of electron microscopy

Stability of plasmonic metal nanoparticles integrated in the back contact of ultra-thin Cu(In,Ga)S2 solar cells

Electro deposited In2S3 buffer layers for CuInS2 solar cells

CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

Solar cells based on CuInS2—an overview

Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S2 based solar cells

Study of CuInS2/ZnS/ZnO solar cells, with chemically deposited ZnS buffer layers from acidic solutions

Highly-efficient Cd-free CuInS2 thin-film solar cells and mini-modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process

Depth profiling of a CdS buffer layer on CuInS2 measured with X-ray photoelectron spectroscopy during removal by HCl etching

DC reactive sputtering of aluminium doped zinc oxide films for solar modules controlled by target voltage

CuInS2 based thin film photovoltaics

CuInS2-based thin film solar cells with sputtered (Zn,Mg)O buffer

Copper indium disulfide solar cell absorbers prepared in a one-step process by reactive magnetron sputtering from copper and indium targets

Reactive sputtering of ZnO/ZnO:Al contacts for chalcopyrite solar modules

Cu2ZnSnS4-based thin films and solar cells by rapid thermal annealing processing

Efficient CuInS2 thin-film solar cells prepared by a sequential process

Combined electron backscatter diffraction and cathodoluminescence measurements on CuInS2/Mo/glass stacks and CuInS2 thin-film solar cells

Study of CUInS2/buffer/ZnO solar cells, with chemically deposited ZnS-In2S3 buffer layers

12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process

Influence of precursor stacking on the absorber growth in Cu(In,Ga)S2 based solar cells prepared by a rapid thermal process

The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface – Impact of post-annealing

Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

12.6% efficient CdS/Cu(In,Ga)S 2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

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