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Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density

Physica status solidi. C, 2013-03, Vol.10 (3), p.498-500

2013

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In situ photoluminescence/Raman study of reversible photo-induced structural transformation of nc-Si

Materials research express, 2014-12, Vol.1 (4), p.45905

2014

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Residual Deformations and Mechanical Stresses in Macroporous and Nonporous Silicon Under Normal Etching Conditions

Journal of electronic materials, 2020-09, Vol.49 (9), p.5240-5243

2020

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Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

Journal of electronic materials, 2018-09, Vol.47 (9), p.5113-5117

2018

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Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

CrystEngComm, 2017, Vol.19 (22), p.2977-2982

2017

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Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.469-476

2019

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Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.330-336

2020

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Formation of MgZnO alloy under thermodynamic conditions

Physica. B, Condensed matter, 2014-11, Vol.453, p.123-126

2014

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Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Semiconductor science and technology, 2004-03, Vol.19 (3), p.475-479

2004

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X-ray diffraction characterization of microdefects in silicon crystals after high-energy electron irradiation

Physica status solidi. A, Applications and materials science, 2011-11, Vol.208 (11), p.2552-2557

2011

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Surface reconstruction and optical absorption changes for Ge nanoclusters grown on chemically oxidized Si(1 0 0) surfaces

Semiconductor science and technology, 2013-08, Vol.28 (8), p.85009

2013

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Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10A), p.A87-A92

2001

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Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study

Journal of physics. D, Applied physics, 2011-01, Vol.44 (2), p.025403-025403

2011

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Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC

Microelectronic engineering, 2008-10, Vol.85 (10), p.2142-2145

2008

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Luminescence peculiarities of polyamide-6 α and γ forms

Applied physics. B, Lasers and optics, 2021-04, Vol.127 (4), Article 53

2021

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Structure, non-stoichiometry, valence of ions, dielectric and magnetic properties of single-phase Bi0.9La0.1FeO3−δ multiferroics

Journal of magnetism and magnetic materials, 2019-08, Vol.483, p.100-113

2019

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Effect of structural imperfections on luminescence of ZnCdSe/ZnSe quantum wells

Journal of alloys and compounds, 2004-05, Vol.371 (1-2), p.202-205

2004

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Control of dielectric properties in bismuth ferrite multiferroic by compacting pressure

Materials chemistry and physics, 2021-01, Vol.258, p.123925, Article 123925

2021

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Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method

Journal of alloys and compounds, 2001-10, Vol.328 (1), p.218-221

2001

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Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy

Thin solid films, 2016-08, Vol.613, p.68-74

2016

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Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Semiconductors (Woodbury, N.Y.), 2008-06, Vol.42 (6), p.689-693

2008

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Correction to: Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

Journal of electronic materials, 2018-10, Vol.47 (10), p.6334-6334

2018

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Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness

Metallofizika i noveĭshie tekhnologii, 2018-10, Vol.40 (6), p.759-776

2018

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Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

Thin solid films, 2000-05, Vol.367 (1-2), p.184-188

2000

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Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

Journal of applied physics, 2014-12, Vol.116 (22)

2014

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Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density

In situ photoluminescence/Raman study of reversible photo-induced structural transformation of nc-Si

Residual Deformations and Mechanical Stresses in Macroporous and Nonporous Silicon Under Normal Etching Conditions

Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures

Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis

Formation of MgZnO alloy under thermodynamic conditions

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

X-ray diffraction characterization of microdefects in silicon crystals after high-energy electron irradiation

Surface reconstruction and optical absorption changes for Ge nanoclusters grown on chemically oxidized Si(1 0 0) surfaces

Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry

Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study

Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC

Luminescence peculiarities of polyamide-6 α and γ forms

Structure, non-stoichiometry, valence of ions, dielectric and magnetic properties of single-phase Bi0.9La0.1FeO3−δ multiferroics

Effect of structural imperfections on luminescence of ZnCdSe/ZnSe quantum wells

Control of dielectric properties in bismuth ferrite multiferroic by compacting pressure

Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method

Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Correction to: Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness

Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

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