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Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.557-561

2021

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Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.989-994

2021

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Zn diffusion technology for InP-InGaAs avalanche photodiodes

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12184

2021

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Spontaneous and stimulated emission in InAs-based LED heterostructures

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66044

2019

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Study of current-voltage characteristics of InAsSb-based LED heterostructures in 4.2 - 300 K temperature range

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12024

2020

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Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2-300 K temperature range

Journal of physics. Conference series, 2017-11, Vol.917 (5), p.52005

2017

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Unveiling hidden structural instabilities and magnetodielectric effect in manganese fluoroperovskites AMnF3

Physical review. B, 2018-08, Vol.98 (6), p.060403

2018

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Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region

Technical physics letters, 2020-02, Vol.46 (2), p.150-153

2020

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Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.239-244

2017

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InSb quantum dots and quantum rings on InAs-rich surface

Applied surface science, 2009-10, Vol.256 (2), p.435-437

2009

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Magnetic and thermal properties of CuFeS2 at low temperatures

Physics of the solid state, 2011, Vol.53 (1), p.71-75

2011

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Intellectual systems in the management of medical technologies and quality of life

Medychni perspektyvy, 2021-03, Vol.26 (1), p.18-29

2021

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Spontaneous and stimulated emission in InAsSb-based LED heterostructures

Infrared physics & technology, 2017-09, Vol.85, p.246-250

2017

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Intellectual systems in the management of medical technologies and quality of life

Medychni perspektyvy, 2021-01, Vol.26 (1), p.18

2021

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On the existence of piezo-electrogyration in crystals

Journal of physics. Condensed matter, 2000-02, Vol.12 (7), p.1485-1496

2000

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Structural and magnetic phase transitions in KMnF3

Physics of the solid state, 2011-09, Vol.53 (9), p.1851-1854

2011

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Unveiling hidden structural instabilities and magnetodielectric effect in manganese fluoroperovskites A MnF 3

Physical review. B, 2018-08, Vol.98 (6), Article 060403

2018

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LEDs based on InAsSbP/InAsSb heterostructures (λ = 4.7 μm) for carbon monoxide detection

Technical physics letters, 2011-06, Vol.37 (6), p.497-499

2011

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Interfacial and Interband Lasing in an InAs∕InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (4), p.472

Astakhova, A. P.

2005

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Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1501-1504

2011

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Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2003-08, Vol.37 (8), p.955-959

2003

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Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

Technical physics, 2012, Vol.57 (1), p.69-73

2012

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Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.236-240

2012

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InAs/InAsSbP light-emitting structures grown by gas-phase epitaxy

Technical physics, 2001-09, Vol.46 (9), p.1125-1127

2001

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Optical birefringence, domain structure, and dielectric permittivity of KTiOPO4(KTP) at low temperature

Solid state communications, 1989-10, Vol.72 (2), p.155-158

1989

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Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Zn diffusion technology for InP-InGaAs avalanche photodiodes

Spontaneous and stimulated emission in InAs-based LED heterostructures

Study of current-voltage characteristics of InAsSb-based LED heterostructures in 4.2 - 300 K temperature range

Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2-300 K temperature range

Unveiling hidden structural instabilities and magnetodielectric effect in manganese fluoroperovskites AMnF3

Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region

Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

InSb quantum dots and quantum rings on InAs-rich surface

Magnetic and thermal properties of CuFeS2 at low temperatures

Intellectual systems in the management of medical technologies and quality of life

Spontaneous and stimulated emission in InAsSb-based LED heterostructures

Intellectual systems in the management of medical technologies and quality of life

On the existence of piezo-electrogyration in crystals

Structural and magnetic phase transitions in KMnF3

Unveiling hidden structural instabilities and magnetodielectric effect in manganese fluoroperovskites A MnF 3

LEDs based on InAsSbP/InAsSb heterostructures (λ = 4.7 μm) for carbon monoxide detection

Interfacial and Interband Lasing in an InAs∕InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds

Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure

Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region

InAs/InAsSbP light-emitting structures grown by gas-phase epitaxy

Optical birefringence, domain structure, and dielectric permittivity of KTiOPO4(KTP) at low temperature

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