UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5157-5164

2018

Volltextzugriff (PDF)

Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3243-3249

2012

Volltextzugriff (PDF)

Nature of the filament formed in HfO2-based resistive random access memory

Thin solid films, 2013-04, Vol.533, p.15-18

2013

Volltextzugriff (PDF)

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

Applied physics letters, 2012-01, Vol.100 (4)

2012

Volltextzugriff (PDF)

A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.438-448

2018

Volltextzugriff (PDF)

Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2

Microelectronic engineering, 2011-07, Vol.88 (7), p.1517-1520

2011

Volltextzugriff (PDF)

Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

Volltextzugriff (PDF)

A comparative study of the microstructure-dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

Physica status solidi. A, Applications and materials science, 2011-08, Vol.208 (8), p.1920-1924

2011

Volltextzugriff (PDF)

Ni based silicides for 45 nm CMOS and beyond

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.29-41

2004

Volltextzugriff (PDF)

Fast V Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.631-640

2011

Volltextzugriff (PDF)

Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium

Physica status solidi. PSS-RRL. Rapid research letters, 2011-01, Vol.5 (1), p.19-21

2011

Volltextzugriff (PDF)

Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal--Insulator--Metal Capacitors Using TiN Bottom Electrode

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DD01-04DD01-4

2010

Volltextzugriff (PDF)

Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O

Chemical vapor deposition, 2010-06, Vol.16 (4-6), p.170-178

2010

Volltextzugriff (PDF)

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Applied physics letters, 2011-04, Vol.98 (16)

2011

Volltextzugriff (PDF)

A Monte Carlo study of the low resistance state retention of HfO x based resistive switching memory

Applied physics letters, 2012-01, Vol.100 (4), p.043507-043507-4

2012

Volltextzugriff (PDF)

Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1398-1404

2006

Volltextzugriff (PDF)

A Variation Robust Inference Engine Based on STT-MRAM with Parallel Read-Out

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-5

2020

Volltextzugriff (PDF)

Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack

ECS transactions, 2012-04, Vol.45 (3), p.317-330

2012

Volltextzugriff (PDF)

Ni fully silicided gates for 45nm CMOS applications

Microelectronic engineering, 2005-12, Vol.82 (3-4), p.441-448

2005

Volltextzugriff (PDF)

Modulation of the Schottky Barrier Height for CMOS advanced contacts

Microelectronic engineering, 2016-04, Vol.156, p.82-85

2016

Volltextzugriff (PDF)

Semiconductor-metal transition in thin VO 2 films grown by ozone based atomic layer deposition

Applied physics letters, 2011-04, Vol.98 (16), p.162902-162902-3

2011

Volltextzugriff (PDF)

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Chemical vapor deposition, 2012-03, Vol.18 (1-3), p.61-69

2012

Volltextzugriff (PDF)

Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition

Journal of the Electrochemical Society, 2009, Vol.156 (10), p.G145

2009

Volltextzugriff (PDF)

Applications of Ni-based silicides to 45 nm CMOS and Beyond

MRS proceedings, 2004, Vol.810, Article C2.1

2004

Volltextzugriff (PDF)

Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

Volltextzugriff (PDF)

1 – 25 von 92

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(40)
Mit Volltextzugriff
(48)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

Nature of the filament formed in HfO2-based resistive random access memory

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration

Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2

Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

A comparative study of the microstructure-dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

Ni based silicides for 45 nm CMOS and beyond

Fast V Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics

Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium

Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal--Insulator--Metal Capacitors Using TiN Bottom Electrode

Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

A Monte Carlo study of the low resistance state retention of HfO x based resistive switching memory

Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics

A Variation Robust Inference Engine Based on STT-MRAM with Parallel Read-Out

Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack

Ni fully silicided gates for 45nm CMOS applications

Modulation of the Schottky Barrier Height for CMOS advanced contacts

Semiconductor-metal transition in thin VO 2 films grown by ozone based atomic layer deposition

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition

Applications of Ni-based silicides to 45 nm CMOS and Beyond

Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition

Suchergebnisse filtern