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Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

Journal of crystal growth, 2017-12, Vol.479, p.41-45

2017

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1.3 μm InGaAlAs asymmetric corrugation-pitch-modulated DFB lasers with high mask margin at 28 Gbit/s

Electronics letters, 2014-06, Vol.50 (13), p.947-948

2014

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40-Gb/s Direct Modulation With High Extinction Ratio Operation of 1.3-$\mu$m InGaAlAs Multiquantum Well Ridge Waveguide Distributed Feedback Lasers

IEEE photonics technology letters, 2007-10, Vol.19 (19), p.1436-1438

2007

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GaInNAs: a novel material for long-wavelength semiconductor lasers

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.719-730

1997

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1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

IEEE photonics technology letters, 1998-04, Vol.10 (4), p.487-488

1998

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Evaluation of the optical-coupling efficiency of InGaAlAs-InGaAsP butt joint using a novel multiple butt-jointed laser

IEEE photonics technology letters, 2005-06, Vol.17 (6), p.1148-1150

2005

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Mechanism analysis of improved GaInNAs optical properties through thermal annealing

Journal of crystal growth, 2000-02, Vol.209 (2), p.345-349

2000

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Exogenous S1P Exposure Potentiates Ischemic Stroke Damage That Is Reduced Possibly by Inhibiting S1P Receptor Signaling

Mediators of Inflammation, 2015-01, Vol.2015 (2015), p.456-467-241

2015

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Polarization-Independent Low-Crosstalk Operation of InAlGaAs-InAlAs Mach-Zehnder Interferometer-Type Photonic Switch With Hybrid Waveguide Structure

IEEE photonics technology letters, 2009-08, Vol.21 (16), p.1118-1120

2009

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Tunable Laser Integrated With Lateral-Grating-Assisted Lateral Codirectional Coupler Filter

IEEE photonics technology letters, 2011-10, Vol.23 (19), p.1391-1393

2011

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InGaAlAs-InGaAsP Heteromaterial Monolithic Integration for Advanced Long-Wavelength Optoelectronic Devices

IEEE journal of quantum electronics, 2009-09, Vol.45 (9), p.1201-1209

2009

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GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

IEEE photonics technology letters, 1998-02, Vol.10 (2), p.188-190

1998

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Temperature dependence of lasing wavelength in a GaInNAs laser diode

IEEE photonics technology letters, 2000-07, Vol.12 (7), p.777-779

2000

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Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure

Journal of crystal growth, 2000-12, Vol.221 (1), p.491-495

2000

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Sphingosine-1-Phosphate/Sphingosine-1-Phosphate Receptor 2 Axis Can Promote Mouse and Human Primary Mast Cell Angiogenic Potential through Upregulation of Vascular Endothelial Growth Factor-A and Matrix Metalloproteinase-2

Mediators of Inflammation, 2016-01, Vol.2016 (2016), p.172-179-016

2016

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Gas-source MBE of GaInNAs for long-wavelength laser diodes

Journal of crystal growth, 1998-06, Vol.188 (1), p.255-259

1998

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Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers

Journal of crystal growth, 2007-04, Vol.301, p.545-547

2007

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Wavelength-Tunable Short-Cavity DBR Laser Array With Active Distributed Bragg Reflector

Journal of lightwave technology, 2006-11, Vol.24 (11), p.4366-4371

2006

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Molecular beam epitaxy of GaInNAs by using solid source arsenic

Journal of crystal growth, 2001-07, Vol.227, p.521-526

2001

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In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

Journal of crystal growth, 2005-02, Vol.274 (3-4), p.372-378

2005

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Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Journal of crystal growth, 1996-07, Vol.164 (1), p.175-179

1996

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Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy

Journal of crystal growth, 2004-12, Vol.273 (1), p.19-25

2004

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N-Type Doping to an Active-Short Cavity DBR Laser to Expand Its Continuous Tuning Range

IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1348-1350

2008

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In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

Journal of crystal growth, 2004-12, Vol.272 (1), p.125-130

2004

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Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.206-209

1997

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Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

1.3 μm InGaAlAs asymmetric corrugation-pitch-modulated DFB lasers with high mask margin at 28 Gbit/s

40-Gb/s Direct Modulation With High Extinction Ratio Operation of 1.3-$\mu$m InGaAlAs Multiquantum Well Ridge Waveguide Distributed Feedback Lasers

GaInNAs: a novel material for long-wavelength semiconductor lasers

1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

Evaluation of the optical-coupling efficiency of InGaAlAs-InGaAsP butt joint using a novel multiple butt-jointed laser

Mechanism analysis of improved GaInNAs optical properties through thermal annealing

Exogenous S1P Exposure Potentiates Ischemic Stroke Damage That Is Reduced Possibly by Inhibiting S1P Receptor Signaling

Polarization-Independent Low-Crosstalk Operation of InAlGaAs-InAlAs Mach-Zehnder Interferometer-Type Photonic Switch With Hybrid Waveguide Structure

Tunable Laser Integrated With Lateral-Grating-Assisted Lateral Codirectional Coupler Filter

InGaAlAs-InGaAsP Heteromaterial Monolithic Integration for Advanced Long-Wavelength Optoelectronic Devices

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

Temperature dependence of lasing wavelength in a GaInNAs laser diode

Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure

Sphingosine-1-Phosphate/Sphingosine-1-Phosphate Receptor 2 Axis Can Promote Mouse and Human Primary Mast Cell Angiogenic Potential through Upregulation of Vascular Endothelial Growth Factor-A and Matrix Metalloproteinase-2

Gas-source MBE of GaInNAs for long-wavelength laser diodes

Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers

Wavelength-Tunable Short-Cavity DBR Laser Array With Active Distributed Bragg Reflector

Molecular beam epitaxy of GaInNAs by using solid source arsenic

In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy

N-Type Doping to an Active-Short Cavity DBR Laser to Expand Its Continuous Tuning Range

In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

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