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A 0.13 /spl mu/m full metal embedded DRAM technology targeting on 1.2 V, 450 MHz operation

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.18.4.1-18.4.4

2001

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A 0.15 /spl mu/m logic based embedded DRAM technology featuring 0.425 /spl mu/m/sup 2/ stacked cell using MIM (metal-insulator-metal) capacitor

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.29-30

2001

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006 IMPACT OF ENTRY SITE ON LATE OUTCOME IN ACUTE STANFORD TYPE B AORTIC DISSECTION

Interactive cardiovascular and thoracic surgery, 2014-10, Vol.19 (suppl 1), p.S2-S3

2014

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006IMPACT OF ENTRY SITE ON LATE OUTCOME IN ACUTE STANFORD TYPE B AORTIC DISSECTION

Interactive cardiovascular and thoracic surgery, 2014-10, Vol.19 (suppl_1), p.S2-S3

2014

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008 Cross-reactions between cooks-foot pollen and cereais by ige antibodies from certain sera of patients with atopic dermatitis

Journal of dermatological science, 1995-07, Vol.10 (1), p.64-64

1995

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013 Three cases of latex allergy in medical employee

Journal of dermatological science, 1995-07, Vol.10 (1), p.65-65

1995

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014 A study of oral allergy syndrome by apple and chestnut

Journal of dermatological science, 1995-07, Vol.10 (1), p.65-65

1995

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073_16987-H2 EGM Fractionation in Apparently Healthy Tissue: Time to Redefine the Voltage Threshold for Diseased Atrium?

JACC. Clinical electrophysiology, 2017-10, Vol.3 (10), p.S7-S8

2017

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073_16988-H2 Electrogram Signature of Specific Activation Patterns: Analysis of Atrial Arrhythmias at High-Density Endocardial Mapping

JACC. Clinical electrophysiology, 2017-10, Vol.3 (10), p.S7-S7

2017

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0815 豚,サギ,住民の日本脳炎血球凝集抑制抗体中の2 : ME感受性抗体について

産業医学, 1967/03/20, Vol.9(3), pp.281

1967

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1.25Gb/s WDM bi directional transceiver module using DFB-LD and PLC with spot-size conversion region

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345), 2002, p.305-310

2002

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1,4-Addition of Diethylzinc to Cyclohexenone Catalyzed by CuOTf-Sulfonamide Combined System. Evidence Supporting a Concerted Mechanism

Chemistry letters, 2003-03, Vol.32 (3), p.224-225

2003

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1,4-Addition of Diorganozincs to α , β -Unsaturated Ketones Catalyzed by a Copper(I)-Sulfonamide Combined System

Bulletin of the Chemical Society of Japan, 2000-04, Vol.73 (4), p.999-1014

2000

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1.48- mu m high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers

IEEE photonics technology letters, 1991-05, Vol.3 (5), p.415-417

1991

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1.48-mum high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers

IEEE photonics technology letters, 1991-05, Vol.3 (5), p.415-417

1991

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1.5 μ m emission characteristics of Er3+-doped stoichiometric LiNbO3

Applied physics letters, 2004-11, Vol.85 (19), p.4367-4369

2004

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1.5-μm InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.516-522

1995

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1.5-mu m InGaAsP-InP multigain-levered-MQW-DFB-LD withhigh-efficiency and large-bandwidth FM response

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.516-522

1995

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1.5 /spl mu/m InGaAsP/InP multi-gain-levered-MQW-DFB-LD with high efficiency and large bandwidth FM response

Proceedings of IEEE 14th International Semiconductor Laser Conference, 1994, p.213-214

1994

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1.5-/spl mu/m InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.516-522

1995

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1.5 μm Band travelling-wave semiconductor optical amplifiers with window facet structure

Electronics letters, 1989-09, Vol.25 (3), p.242-243

1989

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1.5 μm Multiple-quantum-well distributed feedback lase diodes grown on corrugated InP by MOVPE

Electronics letters, 1988, Vol.24 (16), p.1045-1046

1988

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1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

Electronics letters, 1988, Vol.24 (16), p.1045

1988

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1.5μm band travelling-wave semiconductor optical amplifiers with window facet structure

Electronics letters, 1989-08, Vol.25 (18), p.1241

1989

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1•5μm band travelling-wave semiconductor optical amplifiers with window facet structure

Electronics letters, 1989, Vol.25 (18), p.1241-1242

1989

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A 0.13 /spl mu/m full metal embedded DRAM technology targeting on 1.2 V, 450 MHz operation

A 0.15 /spl mu/m logic based embedded DRAM technology featuring 0.425 /spl mu/m/sup 2/ stacked cell using MIM (metal-insulator-metal) capacitor

006 IMPACT OF ENTRY SITE ON LATE OUTCOME IN ACUTE STANFORD TYPE B AORTIC DISSECTION

006IMPACT OF ENTRY SITE ON LATE OUTCOME IN ACUTE STANFORD TYPE B AORTIC DISSECTION

008 Cross-reactions between cooks-foot pollen and cereais by ige antibodies from certain sera of patients with atopic dermatitis

013 Three cases of latex allergy in medical employee

014 A study of oral allergy syndrome by apple and chestnut

073_16987-H2 EGM Fractionation in Apparently Healthy Tissue: Time to Redefine the Voltage Threshold for Diseased Atrium?

073_16988-H2 Electrogram Signature of Specific Activation Patterns: Analysis of Atrial Arrhythmias at High-Density Endocardial Mapping

0815 豚,サギ,住民の日本脳炎血球凝集抑制抗体中の2 : ME感受性抗体について

1.25Gb/s WDM bi directional transceiver module using DFB-LD and PLC with spot-size conversion region

1,4-Addition of Diethylzinc to Cyclohexenone Catalyzed by CuOTf-Sulfonamide Combined System. Evidence Supporting a Concerted Mechanism

1,4-Addition of Diorganozincs to α , β -Unsaturated Ketones Catalyzed by a Copper(I)-Sulfonamide Combined System

1.48- mu m high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers

1.48-mum high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiers

1.5 μ m emission characteristics of Er3+-doped stoichiometric LiNbO3

1.5-μm InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response

1.5-mu m InGaAsP-InP multigain-levered-MQW-DFB-LD withhigh-efficiency and large-bandwidth FM response

1.5 /spl mu/m InGaAsP/InP multi-gain-levered-MQW-DFB-LD with high efficiency and large bandwidth FM response

1.5-/spl mu/m InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response

1.5 μm Band travelling-wave semiconductor optical amplifiers with window facet structure

1.5 μm Multiple-quantum-well distributed feedback lase diodes grown on corrugated InP by MOVPE

1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1.5μm band travelling-wave semiconductor optical amplifiers with window facet structure

1•5μm band travelling-wave semiconductor optical amplifiers with window facet structure

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