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Microprocessor, the Preceding Technology and Successive Progress II

The Journal of The Institute of Electrical Engineers of Japan, 2011/07/01, Vol.131(7), pp.429-432

KISHINO, Seigo

2011

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Microprocessor, the Preceding Technology and Successive Progress I

The Journal of The Institute of Electrical Engineers of Japan, 2011/06/01, Vol.131(6), pp.363-366

KISHINO, Seigo

2011

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Microprocessor, the Preceding Technology and Successive Progress I

Denki Gakkai shi, 2011, Vol.131 (6), p.363-366

KISHINO, Seigo

2011

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Microprocessor, the Preceding Technology and Successive Progress II

Denki Gakkai shi, 2011, Vol.131 (7), p.429-432

KISHINO, Seigo

2011

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Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers

Japanese Journal of Applied Physics, 2003-04, Vol.42 (Part 2, No. 4B), p.L429-L431

2003

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Semiconductor Electronics. Characterization of Semiconductor Materials at Sub-Micron Scale Using Scanning Capacitance Microscopy

Zairyō, 2002, Vol.51 (9), p.995-998

2002

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マイクロプロセッサの誕生までとその後の発展 I

電気学会誌, 2011/06/01, Vol.131(6), pp.363-366

岸野, 正剛

2011

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マイクロプロセッサの誕生までとその後の発展 II

電気学会誌, 2011/07/01, Vol.131(7), pp.429-432

岸野, 正剛

2011

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Barrier height of InP Schottky diodes prepared by means of UV oxidation

Japanese Journal of Applied Physics, 1993-02, Vol.32 (2), p.699-703

1993

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ICTS of MOS interface states enhanced by gold diffusion

Japanese Journal of Applied Physics, 1991-07, Vol.30 (7B), p.L1293-L1295

1991

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Local electrical characterization of SOI wafers by scanning probe microscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.156-159

2002

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Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

Applied physics letters, 2001-09, Vol.79 (12), p.1825-1827

2001

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Preliminary study of a novel scanning charge-pumping method using extra gates for SOI wafer inspection

IEEE electron device letters, 2002-10, Vol.23 (10), p.630-632

2002

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Anomalous Enhancement of Transmitted Intensity in Asymmetric Diffraction of X-Rays from a Single Crystal

Journal of the Physical Society of Japan, 1972-01, Vol.33 (1), p.158-166

1972

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Photoluminescence Analysis of Annealed Silicon Crystals

Japanese Journal of Applied Physics, 1979, Vol.18 (7), p.1403-1404

1979

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Frequency domain lifetime characterization

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1653-1661

2000

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Precise angle and position detection utilizing optical interference on metal-oxide-semiconductor-type position-sensitive detectors

Japanese Journal of Applied Physics, 1995, Vol.34 (2A), p.638-642

1995

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Plane Defect at the Interface and Dislocations in Epitaxially Grown GaAs

Journal of the Electrochemical Society, 1972, Vol.119 (8), p.1113

1972

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Chemical Composition of Al 2 O 3 /InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation

Japanese Journal of Applied Physics, 1994-10, Vol.33 (10R), p.5894

1994

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Evaluation of Deep Levels in Si-MOS Structure using ICTS Measurement

IEEJ Transactions on Electronics, Information and Systems, 1998/09/01, Vol.118(9), pp.1299-1308

1998

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Characterization of deep levels in Si-MOS structure using ICTS measurement

Electrical engineering in Japan, 2000-03, Vol.130 (4), p.76-86

2000

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MOS-type one-dimensional position-sensitive detectors with a linearly detectable face of 30 mm long

Japanese Journal of Applied Physics, 1991-04, Vol.30 (4), p.637-638

1991

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Characterization of Both Thin Crystalline Film and Bulk Crystal Using Both Soft X-ray Beams and Asymmetric Diffraction(<Special Issue>Growth and Characterization of Silicon Crystals)

Journal of the Japanese Association for Crystal Growth, 1977/06/25, Vol.4(1-2), pp.73-85

Kishino, Seigo

1977

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Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior

Japanese Journal of Applied Physics, 1982-01, Vol.21 (1R), p.1

1982

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Carbon and oxygen role for thermally induced microdefect formation in silicon crystals

Applied physics letters, 1979-08, Vol.35 (3), p.213-215

1979

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Microprocessor, the Preceding Technology and Successive Progress II

Microprocessor, the Preceding Technology and Successive Progress I

Microprocessor, the Preceding Technology and Successive Progress I

Microprocessor, the Preceding Technology and Successive Progress II

Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers

Semiconductor Electronics. Characterization of Semiconductor Materials at Sub-Micron Scale Using Scanning Capacitance Microscopy

マイクロプロセッサの誕生までとその後の発展 I

マイクロプロセッサの誕生までとその後の発展 II

Barrier height of InP Schottky diodes prepared by means of UV oxidation

ICTS of MOS interface states enhanced by gold diffusion

Local electrical characterization of SOI wafers by scanning probe microscopy

Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

Preliminary study of a novel scanning charge-pumping method using extra gates for SOI wafer inspection

Anomalous Enhancement of Transmitted Intensity in Asymmetric Diffraction of X-Rays from a Single Crystal

Photoluminescence Analysis of Annealed Silicon Crystals

Frequency domain lifetime characterization

Precise angle and position detection utilizing optical interference on metal-oxide-semiconductor-type position-sensitive detectors

Plane Defect at the Interface and Dislocations in Epitaxially Grown GaAs

Chemical Composition of Al 2 O 3 /InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation

Evaluation of Deep Levels in Si-MOS Structure using ICTS Measurement

Characterization of deep levels in Si-MOS structure using ICTS measurement

MOS-type one-dimensional position-sensitive detectors with a linearly detectable face of 30 mm long

Characterization of Both Thin Crystalline Film and Bulk Crystal Using Both Soft X-ray Beams and Asymmetric Diffraction(<Special Issue>Growth and Characterization of Silicon Crystals)

Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior

Carbon and oxygen role for thermally induced microdefect formation in silicon crystals

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