UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Journal of applied physics, 2006-11, Vol.100 (9), p.094108-094108-6

2006

Volltextzugriff (PDF)

Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

Journal of applied physics, 2002-04, Vol.91 (7), p.4353-4363

2002

Volltextzugriff (PDF)

Spectroscopic analysis of Al and N diffusion in HfO2

Journal of applied physics, 2012-09, Vol.112 (6)

2012

Volltextzugriff (PDF)

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

IEEE electron device letters, 2009-03, Vol.30 (3), p.216-218

2009

Volltextzugriff (PDF)

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

Journal of applied physics, 2006-01, Vol.99 (2)

2006

Volltextzugriff (PDF)

Effects of ALD HfO2 thickness on charge trapping and mobility

Microelectronic engineering, 2005-06, Vol.80, p.218-221

2005

Volltextzugriff (PDF)

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Microelectronic engineering, 2013-09, Vol.109, p.75-78

2013

Volltextzugriff (PDF)

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Applied physics letters, 2008-03, Vol.92 (9)

2008

Volltextzugriff (PDF)

Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

Applied physics letters, 2006-01, Vol.88 (3)

2006

Volltextzugriff (PDF)

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Applied physics letters, 2007-08, Vol.91 (6)

2007

Volltextzugriff (PDF)

Increasing permittivity in HfZrO thin films by surface manipulation

Applied physics letters, 2009-08, Vol.95 (5), p.052904-052904-3

2009

Volltextzugriff (PDF)

Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes

Applied physics letters, 2013-05, Vol.102 (21)

2013

Volltextzugriff (PDF)

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Applied physics letters, 2014-04, Vol.104 (16)

2014

Volltextzugriff (PDF)

Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Applied physics letters, 2009-07, Vol.95 (2)

2009

Volltextzugriff (PDF)

Thermal stability of nitrogen in nitrided HfSiO2/SiO2/Si(001) ultrathin films

Journal of applied physics, 2008-11, Vol.104 (10)

2008

Volltextzugriff (PDF)

Interfacial chemistry of the Sr/SiOxNy/Si(100) nanostructure

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2222-2231

2001

Volltextzugriff (PDF)

Chemical and thermal reduction of thin films of copper ( II ) oxide and copper ( I ) oxide

Journal of applied physics, 2001-10, Vol.90 (8), p.4256-4264

2001

Volltextzugriff (PDF)

Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

Applied physics letters, 2005-12, Vol.87 (26)

2005

Volltextzugriff (PDF)

Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

Physica status solidi. A, Applications and materials science, 2012-04, Vol.209 (4), p.679-682

2012

Volltextzugriff (PDF)

Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

2010 International Electron Devices Meeting, 2010, p.19.6.1-19.6.4

2010

Volltextzugriff (PDF)

Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.MY.2.1-MY.2.5

2013

Volltextzugriff (PDF)

Precursor chemistry and film growth with (methylcyclopentadienyl) (1,5-cyclooctadiene)iridium

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-01, Vol.18 (1), p.10-16

2000

Volltextzugriff (PDF)

Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.979-989

2006

Volltextzugriff (PDF)

Connecting the physical and electrical properties of Hafnia-based RRAM

2013 IEEE International Electron Devices Meeting, 2013-12, p.22.2.1-22.2.4

2013

Volltextzugriff (PDF)

Surface reaction of trisdimethylaminoantimony on GaSb(100)

Surface science, 1999-10, Vol.440 (1-2), p.187-195

1999

Volltextzugriff (PDF)

1 – 25 von 1.263

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(1.005)
Mit Volltextzugriff
(1.025)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(696)
Life Sciences & Biomedicine
(443)
Humans
(357)
Male
(213)
Biological And Medical Sciences
(211)
Female
(207)
Physical Sciences
(194)
Physics
(160)
Medical Sciences
(151)
Animals
(130)
Adult
(127)
Technology
(110)
Middle Aged
(104)
Neurosciences & Neurology
(82)
Aged
(72)
Engineering
(71)
Fundamental And Applied Biological Sciences. Psychology
(67)
Engineering, Electrical & Electronic
(56)
Physics, Applied
(55)
Exact Sciences And Technology
(52)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(11)

Menü

Weitere Dienste

Einstellungen

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

Spectroscopic analysis of Al and N diffusion in HfO2

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

Effects of ALD HfO2 thickness on charge trapping and mobility

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Increasing permittivity in HfZrO thin films by surface manipulation

Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Thermal stability of nitrogen in nitrided HfSiO2/SiO2/Si(001) ultrathin films

Interfacial chemistry of the Sr/SiOxNy/Si(100) nanostructure

Chemical and thermal reduction of thin films of copper ( II ) oxide and copper ( I ) oxide

Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

Precursor chemistry and film growth with (methylcyclopentadienyl) (1,5-cyclooctadiene)iridium

Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs

Connecting the physical and electrical properties of Hafnia-based RRAM

Surface reaction of trisdimethylaminoantimony on GaSb(100)

Suchergebnisse filtern