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Continuous wave room temperature operation of the 2 μm GaSb-based photonic crystal surface emitting diode lasers

Applied physics letters, 2023-03, Vol.122 (13)

2023

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High power cascade diode lasers emitting near 2 μm

Applied physics letters, 2016-03, Vol.108 (13)

2016

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Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Applied physics letters, 2022-04, Vol.120 (14)

2022

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Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Nature communications, 2022-10, Vol.13 (1), p.5960-7, Article 5960

2022

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Comparison of Thermal and Atomic-Hydrogen-Assisted Oxide Desorption Methods for Regrowth of GaSb-Based Cascade Diode Lasers

Journal of electronic materials, 2021-10, Vol.50 (10), p.5522-5528

2021

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Perspective on advances in InAsSb type II superlattices grown on virtual substrates

Applied physics letters, 2020-12, Vol.117 (25)

2020

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Three stage cascade diode lasers generating 500 mW near 3.2 μ m

Applied physics letters, 2015-09, Vol.107 (11)

2015

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Cascade type-I quantum well diode lasers emitting 960 mW near 3 μ m

Applied physics letters, 2014-10, Vol.105 (16)

2014

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GaSb-based diode lasers with asymmetric coupled quantum wells

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Applied physics letters, 2018-11, Vol.113 (21)

2018

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Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Applied physics letters, 2020-01, Vol.116 (3)

2020

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Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Photonics, 2022-11, Vol.9 (12), p.891

2022

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Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

Journal of applied physics, 2015-04, Vol.117 (16)

2015

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Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Photonics, 2016-06, Vol.3 (2), p.27

2016

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Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

IEEE journal of selected topics in quantum electronics, 2025-03, Vol.31 (2: Pwr. and Effic. Scaling in Semiconductor Lasers), p.1-7

2025

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Continuous wave room temperature operation of the 2 $μ$m GaSb-based photonic crystal surface emitting diode lasers

Applied physics letters, 2023-03, Vol.122 (13)

2023

Volltextzugriff (PDF)

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Nature communications, 2022-10, Vol.13 (1)

2022

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Review of virtual substrate technologies for 6.3 Ångström lattice constants

Journal of Vacuum Science & Technology A, 2023-07, Vol.41 (4)

2023

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Type-I Diode Lasers for Spectral Region Above 3 μm

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1426-1434

2011

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Microcavity enhanced Stark optical modulator for long-wave infrared

Solid state communications, 2022-12, Vol.358, p.115010, Article 115010

2022

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Design considerations for a long-wavelength InAsSb detector diode

Semiconductor science and technology, 2024-06, Vol.39 (6), p.6

2024

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High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Optics letters, 2021-04, Vol.46 (8)

2021

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High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Optics letters, 2021-04, Vol.46 (8), p.1967-1970

2021

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Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

IEEE photonics technology letters, 2020-09, Vol.32 (17), p.1017-1020

2020

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Continuous wave room temperature operation of the 2 μm GaSb-based photonic crystal surface emitting diode lasers

High power cascade diode lasers emitting near 2 μm

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Comparison of Thermal and Atomic-Hydrogen-Assisted Oxide Desorption Methods for Regrowth of GaSb-Based Cascade Diode Lasers

Perspective on advances in InAsSb type II superlattices grown on virtual substrates

Three stage cascade diode lasers generating 500 mW near 3.2 μ m

Cascade type-I quantum well diode lasers emitting 960 mW near 3 μ m

GaSb-based diode lasers with asymmetric coupled quantum wells

Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

Continuous wave room temperature operation of the 2 $μ$m GaSb-based photonic crystal surface emitting diode lasers

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Review of virtual substrate technologies for 6.3 Ångström lattice constants

Type-I Diode Lasers for Spectral Region Above 3 μm

Microcavity enhanced Stark optical modulator for long-wave infrared

Design considerations for a long-wavelength InAsSb detector diode

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

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