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Power-Loss Breakdown of a 750-V 100-kW 20-kHz Bidirectional Isolated DC-DC Converter Using SiC-MOSFET/SBD Dual Modules

IEEE transactions on industry applications, 2015-01, Vol.51 (1), p.420-428

2015

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Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4339-4345

2016

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A High-Speed Protection Circuit for IGBTs Subjected to Hard-Switching Faults

IEEE transactions on industry applications, 2015-03, Vol.51 (2), p.1774-1781

2015

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Short-Circuit Protection Method Based on a Gate Charge Characteristic

IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2015-01, Vol.4 (4), p.360-369

2015

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Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

Electronics and communications in Japan, 2014-04, Vol.97 (4), p.80-89

2014

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A 750-V, 100-kW, 20-kHz Bidirectional Isolated DC/DC Converter Using SiC-MOSFET/SBD Modules

Denki Gakkai ronbunshi. D, Sangyō ōyō bumonshi, 2014, Vol.134 (5), p.544-553

2014

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Enhancement of Power Conversion Efficiency in a Low-Power Range of a Bidirectional Isolated DC-DC Converter by Intermittent Operation

Denki Gakkai ronbunshi. D, Sangyō ōyō bumonshi, 2016, Vol.136 (7), p.501-508

2016

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An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions

Denki Gakkai ronbunshi. D, Sangyō ōyō bumonshi, 2014, Vol.134 (10), p.853-862

2014

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A high-speed protection circuit for IGBTs subjected to hard-switching faults

2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014, 2014, p.2519-2525

2014

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Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model

Denki Gakkai ronbunshi. D, Sangyō ōyō bumonshi, 2014, Vol.134 (5), p.486-495

2014

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Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA), 2014, p.750-757

2014

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Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

Denki Gakkai ronbunshi. D, Sangyō ōyō bumonshi, 2012, Vol.132 (5), p.566-573

2012

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A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs

2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015, p.4759-4764

2015

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High Power-Density SiC Converter

Materials science forum, 2009-01, Vol.600-603, p.1223-1226

2009

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Switching Characteristics of SiC-MOSFET and SBD Power Modules

Materials science forum, 2006-10, Vol.527-529, p.1289-1292

2006

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A short circuit protection method based on a gate charge characteristic

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA), 2014, p.2290-2296

2014

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Flux creep in the melt-processed Bi-based oxide superconductors including normal particles

Journal of applied physics, 1992-03, Vol.71 (6), p.2765-2768

1992

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Microstructure and superconducting properties of Bi-Sr-Ca-Cu-O system prepared by a melt process

Japanese Journal of Applied Physics, 1991-07, Vol.30 (7A), p.L1160-L1162

1991

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Effect of Pt on crystallization of Bi-Sr-Ca-Cu-O by melt process

Japanese Journal of Applied Physics, 1992-02, Vol.31 (2B), p.L154-L156

1992

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Modeling of IGBTs with focus on voltage dependency of terminal capacitances

Proceedings of the 2011 14th European Conference on Power Electronics and Applications, 2011, p.1-9

2011

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Introduction of pinning center in Bi-based oxides prepared using melt process

Physica. C, Superconductivity, 1991-12, Vol.185, p.2219-2220

1991

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Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs

Materials science forum, 2009-01, Vol.615-617, p.903-906, Article 903

2009

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Bidirectional Isolated Dual-Active-Bridge (DAB) DC-DC Converters Using 1.2-kV 400-A SiC-MOSFET Dual Modules

CPSS transactions on power electronics and applications, 2016-12, Vol.1 (1), p.33-40

2016

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Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Materials science forum, 2002-04, Vol.389-393, p.1165-1168

2002

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Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC

Materials science forum, 2001-01, Vol.353-356, p.731-734

2001

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Power-Loss Breakdown of a 750-V 100-kW 20-kHz Bidirectional Isolated DC-DC Converter Using SiC-MOSFET/SBD Dual Modules

Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

A High-Speed Protection Circuit for IGBTs Subjected to Hard-Switching Faults

Short-Circuit Protection Method Based on a Gate Charge Characteristic

Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

A 750-V, 100-kW, 20-kHz Bidirectional Isolated DC/DC Converter Using SiC-MOSFET/SBD Modules

Enhancement of Power Conversion Efficiency in a Low-Power Range of a Bidirectional Isolated DC-DC Converter by Intermittent Operation

An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions

A high-speed protection circuit for IGBTs subjected to hard-switching faults

Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model

Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs

High Power-Density SiC Converter

Switching Characteristics of SiC-MOSFET and SBD Power Modules

A short circuit protection method based on a gate charge characteristic

Flux creep in the melt-processed Bi-based oxide superconductors including normal particles

Microstructure and superconducting properties of Bi-Sr-Ca-Cu-O system prepared by a melt process

Effect of Pt on crystallization of Bi-Sr-Ca-Cu-O by melt process

Modeling of IGBTs with focus on voltage dependency of terminal capacitances

Introduction of pinning center in Bi-based oxides prepared using melt process

Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs

Bidirectional Isolated Dual-Active-Bridge (DAB) DC-DC Converters Using 1.2-kV 400-A SiC-MOSFET Dual Modules

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC

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