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Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.710-716

1998

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Effects of temperature, sowing depth and soil hardness on seedling establishment and yield of Cambodian rice [Oryza sativa] direct-seeded in flood paddy fields

Plant production science, 2007-01, Vol.10 (1), p.129-135

2007

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Quality control techniques for constructing attractive corporate Websites: Usability in relation to the popularity ranking of Websites

Lecture notes in computer science, 2002, p.53-62

2002

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Deposition and characterization of ZnxMg1−xS thin films on amorphous substrates

Applied surface science, 1997-04, Vol.113-114, p.432-435

1997

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Single-electron-tunneling effect in nanoscale granular microbridges

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.4161-4165

1997

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A study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.923-926

1998

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An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1378-1383

1999

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An 0.18-mu m CMOS for mixed digital and analog applications withzero-volt-V(th) epitaxial-channel MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1378-1383

1999

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An 0.18-μm CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1378-1383

1999

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On-chip spiral inductors with diffused shields using channel-stop implant

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.540-543

1998

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0.18- mu m CMOS for mixed digital and analog applications with zero-volt-V sub(th) epitaxial-channel MOSFET's

IEEE transactions on electron devices, 1999-01, Vol.46 (7), p.1378-1383

1999

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A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation

Solid-state electronics, 1999, Vol.43 (7), p.1219-1224

1999

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Fabrication of Pd nanostructures with scanning tunneling microscope

Japanese Journal of Applied Physics, 1995, Vol.34 (9B), p.L1221-L1223

1995

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Process induced damage on RFCMOS

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.965-968

1998

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A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion

Solid-state electronics, 1999, Vol.43 (7), p.1209-1214

1999

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Deposition and characterization of ZnxMg1-xS thin films on amorphous substrates

Applied surface science, 1997, Vol.113114, p.432-435

1997

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A low power 40nm CMOS technology featuring extremely high density of logic (2100kGate/mm2) and SRAM (0.195μm2) for wide range of mobile applications with wireless system

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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RF modelling for 0.1um gate length MOSFETs

29th European Solid-State Device Research Conference, 1999, Vol.1, p.656-659

1999

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Future perspective and scaling down roadmap for RF CMOS

1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326), 1999, p.165-166

1999

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Future perspective and scaling down roadmap for RF CMOS

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.163-164

1999

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0.12 /spl mu/m raised gate/source/drain epitaxial channel NMOS technology

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.927-930

1998

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A study of self-align doped channel structure for low power and low l/f noise operation

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), 1998, p.98-99

1998

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Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.819-822

1999

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Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.119-120

1999

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High performance RF characteristics of raised gate/source/drain CMOS with Co salicide

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), 1998, p.136-137

1998

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Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Effects of temperature, sowing depth and soil hardness on seedling establishment and yield of Cambodian rice [Oryza sativa] direct-seeded in flood paddy fields

Quality control techniques for constructing attractive corporate Websites: Usability in relation to the popularity ranking of Websites

Deposition and characterization of ZnxMg1−xS thin films on amorphous substrates

Single-electron-tunneling effect in nanoscale granular microbridges

A study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

An 0.18-mu m CMOS for mixed digital and analog applications withzero-volt-V(th) epitaxial-channel MOSFETs

An 0.18-μm CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

On-chip spiral inductors with diffused shields using channel-stop implant

0.18- mu m CMOS for mixed digital and analog applications with zero-volt-V sub(th) epitaxial-channel MOSFET's

A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation

Fabrication of Pd nanostructures with scanning tunneling microscope

Process induced damage on RFCMOS

A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion

Deposition and characterization of ZnxMg1-xS thin films on amorphous substrates

A low power 40nm CMOS technology featuring extremely high density of logic (2100kGate/mm2) and SRAM (0.195μm2) for wide range of mobile applications with wireless system

RF modelling for 0.1um gate length MOSFETs

Future perspective and scaling down roadmap for RF CMOS

Future perspective and scaling down roadmap for RF CMOS

0.12 /spl mu/m raised gate/source/drain epitaxial channel NMOS technology

A study of self-align doped channel structure for low power and low l/f noise operation

Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

High performance RF characteristics of raised gate/source/drain CMOS with Co salicide

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