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Nano-electromechanical Drumhead Resonators from Two-Dimensional Material Bimorphs

Nano letters, 2018-11, Vol.18 (11), p.6686-6695

2018

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Electronic structure and thermoelectric properties of p-type Ag-doped Mg2Sn and Mg2Sn1-xSix (x = 0.05, 0.1)

Journal of applied physics, 2014-10, Vol.116 (15)

2014

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TRRUST: a reference database of human transcriptional regulatory interactions

Scientific reports, 2015-06, Vol.5 (1), p.11432, Article 11432

2015

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Monolayer MoS2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography

Nano letters, 2019-03, Vol.19 (3), p.2092-2098

2019

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Material-Dependent Evolution of Mechanical Folding Instabilities in Two-Dimensional Atomic Membranes

ACS applied materials & interfaces, 2020-03, Vol.12 (9), p.10801-10808

2020

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Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Nature communications, 2018-09, Vol.9 (1), p.3988-9, Article 3988

2018

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Stochastic Stress Jumps Due to Soliton Dynamics in Two-Dimensional van der Waals Interfaces

Nano letters, 2020-02, Vol.20 (2), p.1201-1207

2020

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Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg2Sn and Mg2Sn1−xSix (x = 0.05, 0.1)” [J. Appl. Phys. 116 , 153706 (2014)]

Journal of applied physics, 2014-11, Vol.116 (17)

2014

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Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Nature communications, 2018-11, Vol.9 (1), p.4965-1, Article 4965

2018

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Monolayer MoS 2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography

Nano letters, 2019-03, Vol.19 (3), p.2092-2098

2019

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Dissipation from Interlayer Friction in Graphene Nanoelectromechanical Resonators

Nano letters, 2021-10, Vol.21 (19), p.8058-8065

2021

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Buckling-mediated phase transitions in nano-electromechanical phononic waveguides

The Journal of the Acoustical Society of America, 2021-10, Vol.150 (4), p.A147-A147

2021

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Mechanically sensing and tailoring electronic properties in two-dimensional atomic membranes

Current opinion in solid state & materials science, 2021-04, Vol.25 (2), p.100900, Article 100900

2021

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Buckling-Mediated Phase Transitions in Nano-Electromechanical Phononic Waveguides

Nano letters, 2021-08, Vol.21 (15), p.6416-6424

2021

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Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

Advanced materials (Weinheim), 2019-09, Vol.31 (39), p.e1903424-n/a

2019

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Correction: Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Physical chemistry chemical physics : PCCP, 2017-06, Vol.19 (24), p.1628-1628

2017

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Eu 2+ –Eu 3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Physical chemistry chemical physics : PCCP, 2017-03, Vol.19 (14)

2017

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Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Physical chemistry chemical physics : PCCP, 2017-04, Vol.19 (14), p.966-9616

2017

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Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors (Adv. Electron. Mater. 10/2022)

Advanced electronic materials, 2022-10, Vol.8 (10), p.n/a

2022

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Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors

Advanced electronic materials, 2022-10, Vol.8 (10), p.n/a

2022

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Correction: Eu 2+ -Eu 3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Physical chemistry chemical physics : PCCP, 2017-06, Vol.19 (24), p.16280-16280

2017

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Eu 2+ -Eu 3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Physical chemistry chemical physics : PCCP, 2017-01, Vol.19 (14), p.9606-9616

2017

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Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors (Adv. Electron. Mater. 10/2022)

Advanced electronic materials, 2022-10, Vol.8 (10)

2022

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Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors

Advanced electronic materials, 2022-10, Vol.8 (10)

2022

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Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg{sub 2}Sn and Mg{sub 2}Sn{sub 1−x}Si{sub x} (x = 0.05, 0.1)” [J. Appl. Phys. 116, 153706 (2014)]

Journal of applied physics, 2014-11, Vol.116 (17)

2014

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Nano-electromechanical Drumhead Resonators from Two-Dimensional Material Bimorphs

Electronic structure and thermoelectric properties of p-type Ag-doped Mg2Sn and Mg2Sn1-xSix (x = 0.05, 0.1)

TRRUST: a reference database of human transcriptional regulatory interactions

Monolayer MoS2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography

Material-Dependent Evolution of Mechanical Folding Instabilities in Two-Dimensional Atomic Membranes

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Stochastic Stress Jumps Due to Soliton Dynamics in Two-Dimensional van der Waals Interfaces

Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg2Sn and Mg2Sn1−xSix (x = 0.05, 0.1)” [J. Appl. Phys. 116 , 153706 (2014)]

Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Monolayer MoS 2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography

Dissipation from Interlayer Friction in Graphene Nanoelectromechanical Resonators

Buckling-mediated phase transitions in nano-electromechanical phononic waveguides

Mechanically sensing and tailoring electronic properties in two-dimensional atomic membranes

Buckling-Mediated Phase Transitions in Nano-Electromechanical Phononic Waveguides

Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

Correction: Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Eu 2+ –Eu 3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Eu2+-Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors (Adv. Electron. Mater. 10/2022)

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors

Correction: Eu 2+ -Eu 3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Eu 2+ -Eu 3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors (Adv. Electron. Mater. 10/2022)

Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors

Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg{sub 2}Sn and Mg{sub 2}Sn{sub 1−x}Si{sub x} (x = 0.05, 0.1)” [J. Appl. Phys. 116, 153706 (2014)]

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