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Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

JOM (1989), 2019-01, Vol.71 (1), p.246-255

2019

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Review of solution-processed oxide thin-film transistors

Japanese Journal of Applied Physics, 2014-02, Vol.53 (2S), p.2-1-02BA02-10

2014

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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Applied physics letters, 2018-04, Vol.112 (17)

2018

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Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Applied physics letters, 2021-12, Vol.119 (24)

2021

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Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells

Nanoscale, 2017-11, Vol.9 (42), p.16305-16312

2017

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Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

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Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments

Scientific reports, 2016-02, Vol.6 (1), p.21869-21869, Article 21869

2016

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Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Advances in materials science and engineering, 2018-01, Vol.2018, p.1-11

2018

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Materials, 2020-07, Vol.13 (13), p.2968

2020

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A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique

Scientific reports, 2017-02, Vol.7 (1), p.43216-43216, Article 43216

2017

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Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Applied physics letters, 2019-10, Vol.115 (18)

2019

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All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (2), p.249-256

2018

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Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors

ACS applied materials & interfaces, 2013-11, Vol.5 (21), p.10715-10720

2013

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Materials, 2020-07, Vol.13 (15), p.3387

2020

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-10, Vol.8 (37), p.1333-1339

2020

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A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

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Label-Free Flexible DNA Biosensing System Using Low-Temperature Solution-Processed In-Zn-O Thin-Film Transistors

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.515-520

2017

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Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

Applied physics letters, 2012-03, Vol.100 (10), p.103702-103702-4

2012

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Hole Transport Enhancing Effects of Polar Solvents on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) for Organic Solar Cells

ACS applied materials & interfaces, 2012-10, Vol.4 (10), p.5394-5398

2012

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Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2‑Based Metal-Ferroelectric-Metal Capacitors

ACS applied electronic materials, 2022-04, Vol.4 (4), p.1405-1414

2022

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Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

AIP advances, 2021-11, Vol.11 (11), p.115213-115213-6

2021

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Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2888-2893

2015

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Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

Review of solution-processed oxide thin-film transistors

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments

Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Label-Free Flexible DNA Biosensing System Using Low-Temperature Solution-Processed In-Zn-O Thin-Film Transistors

Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

Hole Transport Enhancing Effects of Polar Solvents on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) for Organic Solar Cells

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2‑Based Metal-Ferroelectric-Metal Capacitors

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors

Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

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