UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Applied physics letters, 2021-12, Vol.119 (24)

2021

Volltextzugriff (PDF)

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Applied physics letters, 2018-10, Vol.113 (18)

2018

Volltextzugriff (PDF)

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Applied physics letters, 2020-12, Vol.117 (23)

2020

Volltextzugriff (PDF)

Update on Non-invasive Brain Stimulation on Stroke Motor Impairment: A Narrative Review

뇌신경재활, 2024, 17(1), 17, pp.1-8

2024

Volltextzugriff (PDF)

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Applied physics letters, 2019-10, Vol.115 (18)

2019

Volltextzugriff (PDF)

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Scientific reports, 2019-05, Vol.9 (1), p.6914-6914, Article 6914

2019

Volltextzugriff (PDF)

Implications of anti‐ganglioside antibodies in isolated dysphagia following COVID‐19 infection: Case series

Brain and behavior, 2024-05, Vol.14 (5), p.e3514-n/a

2024

Volltextzugriff (PDF)

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-10, Vol.8 (37), p.1333-1339

2020

Volltextzugriff (PDF)

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

Volltextzugriff (PDF)

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

AIP advances, 2021-11, Vol.11 (11), p.115213-115213-6

2021

Volltextzugriff (PDF)

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Materials, 2020-07, Vol.13 (13), p.2968

2020

Volltextzugriff (PDF)

Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework

IEEE electron device letters, 2022-01, Vol.43 (1), p.21-24

2022

Volltextzugriff (PDF)

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Materials, 2020-07, Vol.13 (15), p.3387

2020

Volltextzugriff (PDF)

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Applied physics letters, 2022-11, Vol.121 (22)

2022

Volltextzugriff (PDF)

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

Volltextzugriff (PDF)

Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis

APL materials, 2021-03, Vol.9 (3), p.031111-031111-7

2021

Volltextzugriff (PDF)

Dolphin Liberation in Korea: Is it Beneficial for Conservation?

Coastal management, 2018-05, Vol.46 (3), p.222-234

2018

Volltextzugriff (PDF)

Corticobulbar tract involvement following COVID-19 infection: Evidence from MRI-tractography and transcranial magnetic stimulation

Clinical neurophysiology, 2022-08, Vol.140, p.1-3

2022

Volltextzugriff (PDF)

Rapid Research Letters

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

Volltextzugriff (PDF)

Rapid Research Letters

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

Volltextzugriff (PDF)

Rapid Research Letters

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

Volltextzugriff (PDF)

Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

Nanoscale, 2015-11, Vol.7 (42), p.17702-17709

2015

Volltextzugriff (PDF)

Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources

Solid-state electronics, 2024-06, Vol.216, p.108911, Article 108911

2024

Volltextzugriff (PDF)

Stress-Induced Crystallization of Thin Hf 1- X Zr X O 2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications

ACS applied materials & interfaces, 2019-02, Vol.11 (5), p.5208-5214

2019

Volltextzugriff (PDF)

Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnOElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05392g

2015-10

Volltextzugriff (PDF)

1 – 25 von 297

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(264)
Mit Volltextzugriff
(268)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(205)
Physical Sciences
(127)
Physics
(106)
Technology
(102)
Physics, Applied
(73)
Materials Science
(68)
Materials Science, Multidisciplinary
(51)
Chemistry
(37)
Life Sciences & Biomedicine
(32)
Science & Technology - Other Topics
(29)
물리학
(27)
Humans
(26)
Engineering
(25)
Physics, Condensed Matter
(21)
Physics, Multidisciplinary
(20)
Nanoscience & Nanotechnology
(18)
Chemistry, Multidisciplinary
(17)
Engineering, Electrical & Electronic
(17)
Chemistry, Physical
(15)
Exact Sciences And Technology
(15)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Update on Non-invasive Brain Stimulation on Stroke Motor Impairment: A Narrative Review

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Implications of anti‐ganglioside antibodies in isolated dysphagia following COVID‐19 infection: Case series

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis

Dolphin Liberation in Korea: Is it Beneficial for Conservation?

Corticobulbar tract involvement following COVID-19 infection: Evidence from MRI-tractography and transcranial magnetic stimulation

Rapid Research Letters

Rapid Research Letters

Rapid Research Letters

Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources

Stress-Induced Crystallization of Thin Hf 1- X Zr X O 2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications

Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnOElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05392g

Suchergebnisse filtern