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Neural oscillation of single silicon nanowire neuron device with no external bias voltage

Scientific reports, 2022-03, Vol.12 (1), p.3516-3516, Article 3516

2022

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Polarity control of carrier injection for nanowire feedback field-effect transistors

Nano research, 2019-10, Vol.12 (10), p.2509-2514

2019

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Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

Scientific reports, 2019-01, Vol.9 (1), p.886-886, Article 886

2019

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Binarized neural network of diode array with high concordance to vector-matrix multiplication

Scientific reports, 2024-03, Vol.14 (1), p.5891-5891, Article 5891

2024

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New ternary inverter with memory function using silicon feedback field-effect transistors

Scientific reports, 2022-07, Vol.12 (1), p.12907-12907, Article 12907

2022

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Universal logic-in-memory cell enabling all basic Boolean algebra logic

Scientific reports, 2022-11, Vol.12 (1), p.20082-20082, Article 20082

2022

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One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Scientific reports, 2021-09, Vol.11 (1), p.17983-17983, Article 17983

2021

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Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors

Scientific reports, 2022-07, Vol.12 (1), p.12534-12534, Article 12534

2022

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Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

Scientific reports, 2024-03, Vol.14 (1), p.6446-6446, Article 6446

2024

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Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

Scientific reports, 2021-09, Vol.11 (1), p.18650-18650, Article 18650

2021

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Flexible Thermoelectric Generators Composed of n‐and p‐Type Silicon Nanowires Fabricated by Top‐Down Method

Advanced energy materials, 2017-04, Vol.7 (7), p.np-n/a

2017

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Steep switching characteristics of single-gated feedback field-effect transistors

Nanotechnology, 2017-02, Vol.28 (5), p.055205-055205

2017

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NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

Scientific reports, 2022-03, Vol.12 (1), p.3643-3643, Article 3643

2022

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Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates

Applied physics letters, 2016-10, Vol.109 (14)

2016

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Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Micromachines (Basel), 2023-05, Vol.14 (6), p.1138

2023

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NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels

Nano research, 2016-02, Vol.9 (2), p.499-506

2016

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Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing

Advanced electronic materials, 2024-07, Vol.10 (7), p.n/a

2024

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Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors

IEEE access, 2023, Vol.11, p.54692-54698

2023

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Large Voltage Generation of Flexible Thermoelectric Nanocrystal Thin Films by Finger Contact

Advanced energy materials, 2017-11, Vol.7 (21), p.n/a

2017

Volltextzugriff (PDF)

Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors

Advanced electronic materials, 2023-04, Vol.9 (4), p.n/a

2023

Volltextzugriff (PDF)

Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor

Micromachines (Basel), 2022-04, Vol.13 (4), p.590

2022

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Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning

Micromachines (Basel), 2023-02, Vol.14 (3), p.504

2023

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Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

IEEE electron device letters, 2018-01, Vol.39 (1), p.47-50

2018

Volltextzugriff (PDF)

Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions

Applied physics letters, 2017-02, Vol.110 (9)

2017

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Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors

Nanomaterials (Basel, Switzerland), 2024-04, Vol.14 (7), p.562

2024

Volltextzugriff (PDF)

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Neural oscillation of single silicon nanowire neuron device with no external bias voltage

Polarity control of carrier injection for nanowire feedback field-effect transistors

Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

Binarized neural network of diode array with high concordance to vector-matrix multiplication

New ternary inverter with memory function using silicon feedback field-effect transistors

Universal logic-in-memory cell enabling all basic Boolean algebra logic

One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors

Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

Flexible Thermoelectric Generators Composed of n‐and p‐Type Silicon Nanowires Fabricated by Top‐Down Method

Steep switching characteristics of single-gated feedback field-effect transistors

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates

Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels

Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing

Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors

Large Voltage Generation of Flexible Thermoelectric Nanocrystal Thin Films by Finger Contact

Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors

Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor

Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning

Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions

Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors

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