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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.282-613

2008

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0.5 and 1.5 THz monolithic imagers in a 65 nm CMOS adopting a VCO-based signal processing

2017 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2017, p.149-152

2017

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A 0.5V 2.41GHz, 196.3dBc/Hz FoM differential colpitts VCO with an output voltage swing exceeding supply and ground potential requiring no additional inductor

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013, p.39-42

2013

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0.6 V 8.1/0.2µW Ultra-Low-Power Logarithmic Power Detectors Employing Subthreshold MOS Transistors

2021 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2021, p.1-3

2021

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A 0.78-µW 96-Ch. Deep Sub-Vt Neural Spike Processor Integrated with a Nanowatt Power Management Unit

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, p.154-157

2018

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0470 Prevalence and Risk Factors for Cardiovascular Diseases According to Phenotypes of Obstructive Sleep Apnea Syndrome: A Retrospective Cohort Study

Sleep (New York, N.Y.), 2019-04, Vol.42 (Supplement_1), p.A189-A189

2019

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1.03 μm Yb-doped mode-locked fiber laser for time-domain THz spectroscopy

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014, p.1-2

2014

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1.1 mW Single-Mode Output Power of All-Monolithic 1.3 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1L), p.L101

2005

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1,2,4,5-Tetramethoxybenzene Suppresses House Dust Mite-Induced Allergic Inflammation in BALB/c Mice

International archives of allergy and immunology, 2016-01, Vol.170 (1), p.35-45

2016

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1,2-Dichloroethane production by two-step oxychlorination reactions in a fluidized bed reactor

Chemical engineering science, 2010, Vol.65 (1), p.499-503

2010

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A 1.2 Gb/s/pin double data rate SDRAM with on-die-termination

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC, 2003, p.314-496 vol.1

2003

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1,3,2-biphenyldioxaborepin (2,2'-biphenoxyborane) as a new hydroborating agent. Directive effects in the hydroboration of the alkenes and alkynes

Heterocycles, 1991-03, Vol.32 (3), p.425-430

1991

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1.4 µm-Thick Transparent Radio Frequency Transmission Lines Based on Instant Fusion of Polyethylene Terephthalate Through Surface of Ag Nanowires

Electronic Materials Letters, 2018, 14(5), , pp.599-609

2018

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The 1,470-nm Bare-Fiber Diode Laser Ablation of the Great Saphenous Vein and Small Saphenous Vein at 1-Year Follow-up Using 8–12 W and a Mean Linear Endovenous Energy Density of 72 J/cm

Journal of vascular and interventional radiology, 2014-11, Vol.25 (11), p.1795-1800

2014

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1.5 μm InAlGaAs/InP VCSELs with Al2O3 Embedded Apertures

LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2006, p.444-445

2006

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1.55 [Formula Omitted]m InAs/InAlGaAs Quantum Dot DFB Lasers

IEEE transactions on nanotechnology, 2008-03, Vol.7 (2), p.128

2008

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1.55 $\mu$m InAs/InAlGaAs Quantum Dot DFB Lasers

IEEE transactions on nanotechnology, 2008-03, Vol.7 (2), p.128-130

2008

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1.55 μm InAs quantum dot DFB lasers

2006 IEEE Nanotechnology Materials and Devices Conference, 2006, Vol.1, p.332-333

2006

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1.55 \mum InAs/InAlGaAs Quantum Dot DFB Lasers

IEEE transactions on nanotechnology, 2008-03, Vol.7 (2), p.128-130

2008

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1.55-/spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as a top mirror

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004, 2004, Vol.1, p.410-411 Vol.1

2004

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1.55-μm bottom-emitting InAiGaAs VCSELs with Al2O3/a-Si thin-film pairs as a top mirror

2004

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1.55-μm DFB lasers over a wide temperature range for analog application

Microwave and optical technology letters, 2006-02, Vol.48 (2), p.273-275

2006

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1.55 μm InAs/InAlGaAs Quantum Dot DFB Lasers : Nanotechnology materials and devices

IEEE transactions on nanotechnology, 2008, Vol.7 (2), p.128-130

2008

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A 1.6Gb/s/pin double-data-rale SDRAM with wave-pipelined CAS latency control

First edition, 2004

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A 1.6Gb/s/pin double-data-rate SDRAM with wave-pipelined CAS latency control

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.210-523 Vol.1

2004

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1 – 25 von 15.647

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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

0.5 and 1.5 THz monolithic imagers in a 65 nm CMOS adopting a VCO-based signal processing

A 0.5V 2.41GHz, 196.3dBc/Hz FoM differential colpitts VCO with an output voltage swing exceeding supply and ground potential requiring no additional inductor

0.6 V 8.1/0.2µW Ultra-Low-Power Logarithmic Power Detectors Employing Subthreshold MOS Transistors

A 0.78-µW 96-Ch. Deep Sub-Vt Neural Spike Processor Integrated with a Nanowatt Power Management Unit

0470 Prevalence and Risk Factors for Cardiovascular Diseases According to Phenotypes of Obstructive Sleep Apnea Syndrome: A Retrospective Cohort Study

1.03 μm Yb-doped mode-locked fiber laser for time-domain THz spectroscopy

1.1 mW Single-Mode Output Power of All-Monolithic 1.3 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

1,2,4,5-Tetramethoxybenzene Suppresses House Dust Mite-Induced Allergic Inflammation in BALB/c Mice

1,2-Dichloroethane production by two-step oxychlorination reactions in a fluidized bed reactor

A 1.2 Gb/s/pin double data rate SDRAM with on-die-termination

1,3,2-biphenyldioxaborepin (2,2'-biphenoxyborane) as a new hydroborating agent. Directive effects in the hydroboration of the alkenes and alkynes

1.4 µm-Thick Transparent Radio Frequency Transmission Lines Based on Instant Fusion of Polyethylene Terephthalate Through Surface of Ag Nanowires

The 1,470-nm Bare-Fiber Diode Laser Ablation of the Great Saphenous Vein and Small Saphenous Vein at 1-Year Follow-up Using 8–12 W and a Mean Linear Endovenous Energy Density of 72 J/cm

1.5 μm InAlGaAs/InP VCSELs with Al2O3 Embedded Apertures

1.55 [Formula Omitted]m InAs/InAlGaAs Quantum Dot DFB Lasers

1.55 $\mu$m InAs/InAlGaAs Quantum Dot DFB Lasers

1.55 μm InAs quantum dot DFB lasers

1.55 \mum InAs/InAlGaAs Quantum Dot DFB Lasers

1.55-/spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as a top mirror

1.55-μm bottom-emitting InAiGaAs VCSELs with Al2O3/a-Si thin-film pairs as a top mirror

1.55-μm DFB lasers over a wide temperature range for analog application

1.55 μm InAs/InAlGaAs Quantum Dot DFB Lasers : Nanotechnology materials and devices

A 1.6Gb/s/pin double-data-rale SDRAM with wave-pipelined CAS latency control

A 1.6Gb/s/pin double-data-rate SDRAM with wave-pipelined CAS latency control

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