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Influence of dimensionality on thermoelectric device performance

Journal of applied physics, 2009-02, Vol.105 (3), p.034506-034506-6

2009

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Cooling of photoexcited carriers in graphene by internal and substrate phonons

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (4), Article 045413

2012

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Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length = 13 nm) Considering Supply Voltage and OFF-Current

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.713-721

2015

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Computational study of the Seebeck coefficient of one-dimensional composite nano-structures

Journal of applied physics, 2011-08, Vol.110 (3), p.034511-034511-9

2011

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On the best bandstructure for thermoelectric performance: A Landauer perspective

Journal of applied physics, 2012-06, Vol.111 (11), p.113707-113707-12

2012

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Au-MoS2 contacts: Quantum transport simulations using a continuum description

Journal of applied physics, 2023-09, Vol.134 (9)

2023

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Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.132-139

2009

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Ge Nanowire nMOSFET Design With Optimum Band Structure for High Ballistic Drive Current

IEEE electron device letters, 2015-08, Vol.36 (8), p.751-753

2015

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Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs

IEEE journal of the Electron Devices Society, 2015-01, Vol.3 (1), p.37-43

2015

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On momentum conservation and thermionic emission cooling

Journal of applied physics, 2010-03, Vol.107 (5), p.054502-054502-8

2010

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Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.505-523

2020

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Effects of Surface Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs

IEEE electron device letters, 2011-06, Vol.32 (6), p.746-748

2011

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Relaxation of optically excited carriers in graphene

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), Article 075449

2011

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Computational study of energy filtering effects in one-dimensional composite nano-structures

Journal of applied physics, 2012-01, Vol.111 (2), p.024508-024508-9

2012

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Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs

IEEE transactions on nanotechnology, 2008-11, Vol.7 (6), p.787-794

2008

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Channel Material Benchmarking of Si and Ge n- and pMOSFETs Considering Effects of Strain and Operating Temperature

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4014-4021

2023

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On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

Journal of applied physics, 2010-01, Vol.107 (2), p.023707-023707-7

2010

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First‐Principles Simulation and Materials Screening for Spin‐Orbit Torque in 2D van der Waals Heterostructures

Small (Weinheim an der Bergstrasse, Germany), 2024-08, Vol.20 (33), p.e2308965-n/a

2024

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Computational Study of Temperature Effects on MOSFET Channel Material Benchmarking

IEEE electron device letters, 2020-09, Vol.41 (9), p.1-1

2020

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Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1189-1196

2019

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Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

IEEE electron device letters, 2009-05, Vol.30 (5), p.526-528

2009

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Ultra-High‑k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p‑Type High-Performance Transistors

Nano letters, 2024-10, Vol.24 (40), p.12353-12360

2024

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Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors

Nano letters, 2024-10, Vol.24 (40), p.12353-12360

2024

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Spin torque generated by valley Hall effect in WSe 2

Physical review. B, 2022-11, Vol.106 (18), Article 184412

2022

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CMOS performance benchmarking of Si, InAs, GaAs, and Ge nanowire n- and pMOSFETs with Lg=13 nm based on atomistic quantum transport simulation including strain effects

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.34.1.1-34.1.4

2015

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Influence of dimensionality on thermoelectric device performance

Cooling of photoexcited carriers in graphene by internal and substrate phonons

Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length = 13 nm) Considering Supply Voltage and OFF-Current

Computational study of the Seebeck coefficient of one-dimensional composite nano-structures

On the best bandstructure for thermoelectric performance: A Landauer perspective

Au-MoS2 contacts: Quantum transport simulations using a continuum description

Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors

Ge Nanowire nMOSFET Design With Optimum Band Structure for High Ballistic Drive Current

Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs

On momentum conservation and thermionic emission cooling

Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

Effects of Surface Orientation on the Performance of Idealized III-V Thin-Body Ballistic n-MOSFETs

Relaxation of optically excited carriers in graphene

Computational study of energy filtering effects in one-dimensional composite nano-structures

Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs

Channel Material Benchmarking of Si and Ge n- and pMOSFETs Considering Effects of Strain and Operating Temperature

On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

First‐Principles Simulation and Materials Screening for Spin‐Orbit Torque in 2D van der Waals Heterostructures

Computational Study of Temperature Effects on MOSFET Channel Material Benchmarking

Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs

Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

Ultra-High‑k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p‑Type High-Performance Transistors

Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors

Spin torque generated by valley Hall effect in WSe 2

CMOS performance benchmarking of Si, InAs, GaAs, and Ge nanowire n- and pMOSFETs with Lg=13 nm based on atomistic quantum transport simulation including strain effects

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