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Highly sensitive graphene biosensor by monomolecular self-assembly of receptors on graphene surface

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Strength of Onyx-based composite 3D printing materials according to fiber reinforcement

Frontiers in materials, 2023-04, Vol.10

2023

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Intestinal Epithelial Deletion of Sphk1 Prevents Colitis-Associated Cancer Development by Inhibition of Epithelial STAT3 Activation

Digestive diseases and sciences, 2020-08, Vol.65 (8), p.2284-2293

2020

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Implementation of low Vgs (1.8V) 12V RF-LDMOS for high-frequency DC-DC converter applications

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.125-128

2012

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Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process

2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.192-195

2009

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Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF)

Journal of the Korean Physical Society, 2007-08, Vol.51 (92), p.723

2007

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BD180 - a new 0.18 μm BCD (Bipolar-CMOS-DMOS) Technology from 7V to 60V

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.64-67

2008

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BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.71-74

2010

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A versatile 30V analog CMOS process in a 0.18μm technology for power management application

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.219-222

2011

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Sol-Gel Deposited LaZrOx Buffer Layer for Ferroelectric Thin Films

Journal of the Korean Physical Society, 2007, 51(II), , pp.100-104

2007

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Improvement of Sol--Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

Jpn J Appl Phys, 2010-09, Vol.49 (9), p.09MA08-09MA08-3

2010

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Implementation of 85V High Side LDMOS with n-layer in a 0.35um BCD Process

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.103-106

2008

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CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49)

Integrated ferroelectrics, 2008-01, Vol.98 (1), p.121-127

2008

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Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrO x buffer layer

Journal of electroceramics, 2009-02, Vol.22 (1-3), p.276-280

2009

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Fabrication and characterization of Au/SBT/LZO/Si MFIS structure

Journal of electroceramics, 2009-10, Vol.23 (2-4), p.284-288

2009

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Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS applied materials & interfaces, 2020-01, Vol.12 (2), p.2854-2861

2020

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Functional identification of a protein inhibitor of neuronal nitric oxide synthase of Taenia solium metacestode

Molecular and biochemical parasitology, 2007-01, Vol.151 (1), p.41-51

2007

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Fabrication and Characterization of MFIS-FET Using Au/BLT/LZO/Si Structures

Ferroelectrics, 2008-01, Vol.368 (1), p.81-89

2008

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Thin Film Properties of Sol-Gel Derived High-K Lanthanum-Doped Zirconium Oxides

Ferroelectrics, 2009-01, Vol.384 (1), p.126-133

2009

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Low Vgs P-ch LDMOS with Sallow Pwell from 8V to 60V

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.177-180

2010

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A new 8V - 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.245-248

2010

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Rare case of pancreatic cancer with leptomeningeal carcinomatosis

World journal of gastroenterology : WJG, 2015-01, Vol.21 (3), p.1020-1023

2015

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Schottky Barrier Variable Graphene/Multilayer-MoS 2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS applied materials & interfaces, 2020-01, Vol.12 (2), p.2854-2861

2020

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Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process

2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC), 2012, p.1-4

2012

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Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2013, p.63-65

2013

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Highly sensitive graphene biosensor by monomolecular self-assembly of receptors on graphene surface

Strength of Onyx-based composite 3D printing materials according to fiber reinforcement

Intestinal Epithelial Deletion of Sphk1 Prevents Colitis-Associated Cancer Development by Inhibition of Epithelial STAT3 Activation

Implementation of low Vgs (1.8V) 12V RF-LDMOS for high-frequency DC-DC converter applications

Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process

Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF)

BD180 - a new 0.18 μm BCD (Bipolar-CMOS-DMOS) Technology from 7V to 60V

BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

A versatile 30V analog CMOS process in a 0.18μm technology for power management application

Sol-Gel Deposited LaZrOx Buffer Layer for Ferroelectric Thin Films

Improvement of Sol--Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

Implementation of 85V High Side LDMOS with n-layer in a 0.35um BCD Process

CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49)

Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrO x buffer layer

Fabrication and characterization of Au/SBT/LZO/Si MFIS structure

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

Functional identification of a protein inhibitor of neuronal nitric oxide synthase of Taenia solium metacestode

Fabrication and Characterization of MFIS-FET Using Au/BLT/LZO/Si Structures

Thin Film Properties of Sol-Gel Derived High-K Lanthanum-Doped Zirconium Oxides

Low Vgs P-ch LDMOS with Sallow Pwell from 8V to 60V

A new 8V - 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

Rare case of pancreatic cancer with leptomeningeal carcinomatosis

Schottky Barrier Variable Graphene/Multilayer-MoS 2 Heterojunction Transistor Used to Overcome Short Channel Effects

Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process

Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM

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