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p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

IEEE photonics technology letters, 2018-01, Vol.30 (2), p.181-184

2018

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AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642-645

2015

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High-Responsivity GaN/InGaN Heterojunction Phototransistors

IEEE photonics technology letters, 2016-10, Vol.28 (19), p.2035-2038

2016

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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Applied physics letters, 2012-10, Vol.101 (16)

2012

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Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

IEEE photonics technology letters, 2016-10, Vol.28 (19), p.2015-2018

2016

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Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending

IEEE electron device letters, 2017-02, Vol.38 (2), p.217-220

2017

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Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

Journal of crystal growth, 2014-02, Vol.388, p.137-142

2014

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Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2679-2683

2015

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Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

Applied physics express, 2015-12, Vol.8 (12), p.122202

2015

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Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Radiative recombination in GaN/InGaN heterojunction bipolar transistors

Applied physics letters, 2015-12, Vol.107 (24)

2015

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Improved Hole Transport by \hbox Layer in Multiple Quantum Wells of Visible LEDs

IEEE photonics technology letters, 2013-09, Vol.25 (18), p.1789-1792

2013

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III-N High-Power Bipolar Transistors

ECS transactions, 2013-08, Vol.58 (4), p.261-267

2013

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Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Applied physics letters, 2010-05, Vol.96 (22), p.221105-221105-3

2010

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Rethinking phonons: The issue of disorder

npj computational materials, 2017-11, Vol.3 (1), p.1-8, Article 49

2017

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Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

Journal of physics. D, Applied physics, 2018-03, Vol.51 (10), p.105105

2018

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Al x Ga1- x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than [Formula Omitted]

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642

2015

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Al x Ga 1− x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642-645

2015

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Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene

Nano letters, 2015-02, Vol.15 (2), p.896-902

2015

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GaN/InGaN avalanche phototransistors

Applied physics express, 2015-03, Vol.8 (3), p.32101

2015

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Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1296-1301

2016

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Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

Applied physics letters, 2014-04, Vol.104 (14)

2014

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Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx

Physical review applied, 2017-09, Vol.8 (3)

2017

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Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Journal of crystal growth, 2014-02, Vol.388, p.143-149

2014

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Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs / InAs 1 − x Sb x

Physical review applied, 2017-09, Vol.8 (3), Article 034028

2017

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p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10

High-Responsivity GaN/InGaN Heterojunction Phototransistors

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending

Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Radiative recombination in GaN/InGaN heterojunction bipolar transistors

Improved Hole Transport by \hbox Layer in Multiple Quantum Wells of Visible LEDs

III-N High-Power Bipolar Transistors

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Rethinking phonons: The issue of disorder

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

Al x Ga1- x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than [Formula Omitted]

Al x Ga 1− x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}

Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene

GaN/InGaN avalanche phototransistors

Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs / InAs 1 − x Sb x

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