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Electronic structure and stability of low symmetry Ta2O5polymorphs

Physica status solidi. PSS-RRL. Rapid research letters, 2014-06, Vol.8 (6), p.560-565

2014

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First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5

Current Applied Physics, 2016, 16(6), , pp.638-643

2016

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Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

Chemistry of materials, 2024-03, Vol.36 (5), p.2194-2219

2024

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Step coverage modeling of thin films in atomic layer deposition

Journal of applied physics, 2007-04, Vol.101 (7), p.073502-073502-7

2007

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Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Microelectronic engineering, 2016-01, Vol.149, p.62-65

2016

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Theoretical Simulation of Surface Evolution Using the Random Deposition and Surface Relaxation for Metal Oxide Film in Atomic Layer Deposition

Journal of materials science & technology, 2010-04, Vol.26 (4), p.371-374

2010

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Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure

Materials research bulletin, 2015-04, Vol.64, p.1-5

2015

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Ru Films from Bis(ethylcyclopentadienyl)ruthenium Using Ozone as a Reactant by Atomic Layer Deposition for Capacitor Electrodes

Journal of the Electrochemical Society, 2012, Vol.159 (6), p.H560-H564

2012

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Demonstration of Ultra-thin Ferroelectric/dielectric and Anti-ferroelectric/dielectric Bilayers for Future DRAM Cell Capacitors

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, p.1-3

2023

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Film growth model of atomic layer deposition for multicomponent thin films

Journal of applied physics, 2005-05, Vol.97 (9), p.093505-093505-5

2005

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD14-04DD14-4

2011

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Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.48-49

2011

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Applicability of Step-Coverage Modeling to TiO[sub 2] Thin Films in Atomic Layer Deposition

Journal of the Electrochemical Society, 2007, Vol.154 (12), p.H1008

2007

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.400-403

2010

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Dielectric Properties of SrTiO3 Thin Films on SrRuO3 Seed Prepared by Plasma-enhanced Atomic Layer Deposition

ECS transactions, 2009, Vol.16 (5), p.335-339

2009

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Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes

Applied physics letters, 2007-08, Vol.91 (6)

2007

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Thermal stability of RuO2 thin films prepared by modified atomic layer deposition

Current applied physics, 2012-09, Vol.12, p.S160-S163

2012

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Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru

Applied physics letters, 2007-08, Vol.91 (9)

2007

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Effect of Sr–Ruthenate Seed Layer on Dielectric Properties of SrTiO[sub 3] Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Journal of the Electrochemical Society, 2008, Vol.155 (10), p.G185

2008

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Electronic structure and stability of low symmetry Ta 2 O 5 polymorphs

Physica status solidi. PSS-RRL. Rapid research letters, 2014-06, Vol.8 (6), p.560-565

2014

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Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

2012 4th IEEE International Memory Workshop, 2012, p.1-4

2012

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The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-4

2011

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Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory

Electrochemical and solid-state letters, 2011, Vol.14 (8), p.H337

2011

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Stroke Revisited: Dyslipidemia in Stroke

1st Edition 2021, 2021

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Effect of crystallinity and nonstoichiometric region on dielectric properties of Sr Ti O 3 films formed on Ru

Applied physics letters, 2007-08, Vol.91 (9), p.092910-092910-3

2007

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Electronic structure and stability of low symmetry Ta2O5polymorphs

First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

Step coverage modeling of thin films in atomic layer deposition

Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Theoretical Simulation of Surface Evolution Using the Random Deposition and Surface Relaxation for Metal Oxide Film in Atomic Layer Deposition

Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure

Ru Films from Bis(ethylcyclopentadienyl)ruthenium Using Ozone as a Reactant by Atomic Layer Deposition for Capacitor Electrodes

Demonstration of Ultra-thin Ferroelectric/dielectric and Anti-ferroelectric/dielectric Bilayers for Future DRAM Cell Capacitors

Film growth model of atomic layer deposition for multicomponent thin films

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array

Applicability of Step-Coverage Modeling to TiO[sub 2] Thin Films in Atomic Layer Deposition

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Dielectric Properties of SrTiO3 Thin Films on SrRuO3 Seed Prepared by Plasma-enhanced Atomic Layer Deposition

Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes

Thermal stability of RuO2 thin films prepared by modified atomic layer deposition

Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru

Effect of Sr–Ruthenate Seed Layer on Dielectric Properties of SrTiO[sub 3] Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Electronic structure and stability of low symmetry Ta 2 O 5 polymorphs

Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications

Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory

Stroke Revisited: Dyslipidemia in Stroke

Effect of crystallinity and nonstoichiometric region on dielectric properties of Sr Ti O 3 films formed on Ru

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