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Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing

Nanoscale, 2021-05, Vol.13 (18), p.8524-8530

2021

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Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Advanced materials technologies, 2022-07, Vol.7 (7), p.n/a

2022

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Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

Nanomaterials (Basel, Switzerland), 2023-10, Vol.13 (19), p.2704

2023

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Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf1−xZrxO2 Thin Films via Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (15), p.2187

2023

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A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering

Advanced materials interfaces, 2022-05, Vol.9 (15), p.n/a

2022

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Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation

Chemical engineering journal (Lausanne, Switzerland : 1996), 2024-05, Vol.488, p.150760, Article 150760

2024

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Enhanced dielectric and energy storage performances of Hf0.6Zr0.4O2 thin films by Al doping

Ceramics international, 2023-06, Vol.49 (11), p.18055-18060

2023

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Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition

Ceramics international, 2022-09, Vol.48 (17), p.25661-25665

2022

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Effects of plasma conditions on sulfurization of MoO3 thin films and surface evolution for formation of MoS2 at low temperatures

Applied surface science, 2020-12, Vol.532, p.147462, Article 147462

2020

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Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping

Materials letters, 2022-08, Vol.321, p.132418, Article 132418

2022

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Atomic layer deposited strontium niobate thin films as new high-k dielectrics

Materials letters, 2021-03, Vol.286, p.129220, Article 129220

2021

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Enhanced electrical properties of ZrO2-TiN based capacitors by introducing ultrathin metal oxides

Materials letters, 2020-11, Vol.279, p.128490, Article 128490

2020

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Triboelectric Nanogenerator (TENG)를 위한 Rutile TiO₂ 박막 성능 및 특성 평가

한국표면공학회지, 2021, 54(6), , pp.324-330

2021

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Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited atomic layer deposition using cyclopentadienyl-based precursors without annealing

Nanoscale, 2021-05, Vol.13 (18), p.8524-853

2021

Volltextzugriff (PDF)

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Nanoscale, 2024-08

2024

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Modulatory effects of the fruits of Tribulus terrestris L. on the function of atopic dermatitis-related calcium channels,Orai1 and TRPV3

Asian Pacific journal of tropical biomedicine, 2016-07, Vol.6 (7), p.580-585

2016

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Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf 1-x Zr x O 2 Thin Films via Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (15)

2023

Volltextzugriff (PDF)

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf[sub.1−x]Zr[sub.x]O[sub.2] Thin Films via Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (15)

2023

Volltextzugriff (PDF)

Triboelectric Nanogenerator (TENG)를 위한 Rutile TiO 2 박막 성능 및 특성 평가

한국표면공학회지, 2021, Vol.54 (6), p.324-330

2021

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A simple, flexible and high-throughput cloning system for plant genome editing via CRISPR-Cas system

Journal of integrative plant biology, 2016-08, Vol.58 (8), p.705-712

2016

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Ethylene Glycol‐Choline Chloride Based Hydrated Deep Eutectic Electrolytes Enabled High‐Performance Zinc‐Ion Battery

Small (Weinheim an der Bergstrasse, Germany), 2024-04, Vol.20 (35), p.e2400692-n/a

2024

Volltextzugriff (PDF)

Development of a climate‐informed analog downscaling method for Asian regions

International journal of climatology, 2022-10, Vol.42 (12), p.6148-6168

2022

Volltextzugriff (PDF)

Effects of BF 2 and B Implantation-Doping on Crystalline Degradation of Pseudomorphic Metastable Ge 0.06 Si 0.94

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.6977

1998

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Defect vs. Nanocrystal Luminescence Emitted in Si-Implanted SiO 2 Layers

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.6981

1998

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Recent trends of mean and extreme precipitation in Korea

International journal of climatology, 2011-03, Vol.31 (3), p.359-370

2011

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Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing

Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf1−xZrxO2 Thin Films via Atomic Layer Deposition

A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering

Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation

Enhanced dielectric and energy storage performances of Hf0.6Zr0.4O2 thin films by Al doping

Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition

Effects of plasma conditions on sulfurization of MoO3 thin films and surface evolution for formation of MoS2 at low temperatures

Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping

Atomic layer deposited strontium niobate thin films as new high-k dielectrics

Enhanced electrical properties of ZrO2-TiN based capacitors by introducing ultrathin metal oxides

Triboelectric Nanogenerator (TENG)를 위한 Rutile TiO₂ 박막 성능 및 특성 평가

Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited atomic layer deposition using cyclopentadienyl-based precursors without annealing

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Modulatory effects of the fruits of Tribulus terrestris L. on the function of atopic dermatitis-related calcium channels,Orai1 and TRPV3

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf 1-x Zr x O 2 Thin Films via Atomic Layer Deposition

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf[sub.1−x]Zr[sub.x]O[sub.2] Thin Films via Atomic Layer Deposition

Triboelectric Nanogenerator (TENG)를 위한 Rutile TiO 2 박막 성능 및 특성 평가

A simple, flexible and high-throughput cloning system for plant genome editing via CRISPR-Cas system

Ethylene Glycol‐Choline Chloride Based Hydrated Deep Eutectic Electrolytes Enabled High‐Performance Zinc‐Ion Battery

Development of a climate‐informed analog downscaling method for Asian regions

Effects of BF 2 and B Implantation-Doping on Crystalline Degradation of Pseudomorphic Metastable Ge 0.06 Si 0.94

Defect vs. Nanocrystal Luminescence Emitted in Si-Implanted SiO 2 Layers

Recent trends of mean and extreme precipitation in Korea

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