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Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts

Small (Weinheim an der Bergstrasse, Germany), 2022-04, Vol.18 (13), p.e2105753-n/a

2022

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Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

Nano letters, 2012-02, Vol.12 (2), p.714-718

2012

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Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

ACS applied materials & interfaces, 2020-01, Vol.12 (4), p.5031-5039

2020

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Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Nano letters, 2015-08, Vol.15 (8), p.5017-5024

2015

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Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Small (Weinheim an der Bergstrasse, Germany), 2022-11, Vol.18 (46), p.e2204547-n/a

2022

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Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

Nanotechnology, 2018-06, Vol.29 (33), p.335202-335202

2018

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Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

Applied physics letters, 2021-06, Vol.118 (26)

2021

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Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1010

2023

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Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Dielectrophoretic assembly of Pt nanoparticle-reduced graphene oxide nanohybrid for highly-sensitive multiple gas sensor

Sensors and actuators. B, Chemical, 2015-12, Vol.220, p.755-761

2015

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Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

Advanced materials (Weinheim), 2016-11, Vol.28 (43), p.9519-9525

2016

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Observation of negative differential resistance in mesoscopic graphene oxide devices

Scientific reports, 2018-05, Vol.8 (1), p.7144-9, Article 7144

2018

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Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

Advanced science, 2021-06, Vol.8 (11), p.e2100102-n/a

2021

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Improved electrical properties of encapsulated MoTe2 with 1T′ edge contacts via laser irradiation

Materials science in semiconductor processing, 2023-01, Vol.153, p.107133, Article 107133

2023

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Schottky Diode with Asymmetric Metal Contacts on WS2

Advanced electronic materials, 2022-03, Vol.8 (3), p.n/a

2022

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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Nature communications, 2023-03, Vol.14 (1), p.1507-1507, Article 1507

2023

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Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature

Sensors and actuators. B, Chemical, 2014-04, Vol.194, p.296-302

2014

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Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas Sensor

ACS applied materials & interfaces, 2015-07, Vol.7 (25), p.13768-13775

2015

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Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (10), p.1700

2023

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Alignment of graphene oxide nanostructures between microgap electrodes via dielectrophoresis for hydrogen gas sensing applications

Applied physics letters, 2015-05, Vol.106 (20)

2015

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Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Advanced materials technologies, 2024-06, Vol.9 (12), p.n/a

2024

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Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure

ACS applied materials & interfaces, 2018-07, Vol.10 (28), p.23961-23967

2018

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Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films

Angewandte Chemie (International ed.), 2014-10, Vol.53 (43), p.11493-11497

International ed. in English, 2014

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P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices

Applied physics letters, 2016-02, Vol.108 (9)

2016

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Assembly of thermally reduced graphene oxide nanostructures by alternating current dielectrophoresis as hydrogen-gas sensors

Applied physics letters, 2013-08, Vol.103 (8)

2013

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Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts

Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate

Dielectrophoretic assembly of Pt nanoparticle-reduced graphene oxide nanohybrid for highly-sensitive multiple gas sensor

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

Observation of negative differential resistance in mesoscopic graphene oxide devices

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

Improved electrical properties of encapsulated MoTe2 with 1T′ edge contacts via laser irradiation

Schottky Diode with Asymmetric Metal Contacts on WS2

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature

Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas Sensor

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Alignment of graphene oxide nanostructures between microgap electrodes via dielectrophoresis for hydrogen gas sensing applications

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films

P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices

Assembly of thermally reduced graphene oxide nanostructures by alternating current dielectrophoresis as hydrogen-gas sensors

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