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Numerical model for electrical explosion of copper wires in water

Journal of applied physics, 2016-11, Vol.120 (20)

2016

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Measurement on the electrical conductivity of copper along the binodal curve in warm dense regime

Applied physics letters, 2021-10, Vol.119 (17)

2021

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SPH code development for X-pinch plasma simulation

Physics of plasmas, 2024-03, Vol.31 (3)

2024

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Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure

Journal of the Korean Physical Society, 2023, 83(11), , pp.867-872

Kim, Deok Kyu

2023

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Dependence of the properties of sputter deposited Al-doped ZnO thin films on base pressure

Journal of alloys and compounds, 2012-05, Vol.522, p.69-73

2012

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Dependence of the sputtering pressure on the characteristics of sputtered ZnO:Al thin films

Journal of the Korean Physical Society, 2022, 80(5), , pp.410-414

Kim, Deok Kyu

2022

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Numerical study of plasma evolution X-pinches in two- and three-dimensional geometry using a MHD code, STHENO

Journal of the Korean Physical Society, 2021, 79(9), , pp.818-827

2021

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The reason of degradation in electrical properties of ZnO:Al thin films annealed with various post-annealing temperature

Current Applied Physics, 2013, 13(9), , pp.2001-2004

2013

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Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

Journal of alloys and compounds, 2011-01, Vol.509 (2), p.421-425

2011

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Initial vacuum effects on the properties of sputter deposited Ga-doped ZnO thin films

Journal of alloys and compounds, 2017-06, Vol.709, p.627-632

2017

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Development of a 2D code framework for high-energy-density plasmas of X-pinch

Journal of the Korean Physical Society, 2024-07, Vol.85 (2), p.156-168

2024

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Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure

Journal of the Korean Physical Society, 2023-12, p.867-872

Kim Deok Kyu

2023

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Effect of RF Power on an Al-doped ZnO Thin Film Deposited by RF Magnetron Sputtering

Journal of the Korean Physical Society, 2011, 59(3), , pp.2349-2353

2011

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Dependence of the sputtering pressure on the characteristics of sputtered ZnO:Al thin films

Journal of the Korean Physical Society, 2022-03, p.410-414

Kim Deok Kyu

2022

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Effect of post-annealing time on the properties of sputtered Al-doped ZnO thin films

Journal of materials science. Materials in electronics, 2016-11, Vol.27 (11), p.11366-11370

2016

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Deposition of ZnO thin films on Si by RF magnetron sputtering with various substrate temperatures

Journal of materials science. Materials in electronics, 2014-12, Vol.25 (12), p.5416-5421

2014

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Effects of in situ annealing on the properties of Al-doped ZnO thin films deposited by RF magnetron sputtering

Journal of materials science. Materials in electronics, 2014-04, Vol.25 (4), p.1589-1595

2014

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Optimum scaling factors for one-dimensional finite-difference time-domain scheme in Maxwell-Boltzmann system

International journal of numerical modelling, 2012-09, Vol.25 (5-6), p.599-606

2012

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Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (1 1 1)

Solid-state electronics, 2007-07, Vol.51 (7), p.1005-1008

Kim, Deok Kyu

2007

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Fluid-particle hybrid simulation on the transports of plasma, recycling neutrals, and carbon impurities in the Korea Superconducting Tokamak Advanced Research divertor region

Physics of plasmas, 2005-06, Vol.12 (6), p.062504-062504-9

2005

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Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition

Journal of materials science. Materials in electronics, 2008-05, Vol.19 (5), p.471-475

Kim, Deok Kyu

2008

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Characteristics of p-type ZnO:As thin films prepared by the ampoule-tube method and ZnO p–n homojunction

Applied physics. A, Materials science & processing, 2010-03, Vol.98 (4), p.913-917

2010

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Simple mixed equation-of-state model of nonideal plasma for simulation of underwater wire explosion

2015 IEEE International Conference on Plasma Sciences (ICOPS), 2015-05, p.1-1

2015

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IEEE_Xplore

Dislocation Reduction of GaN Layer with a SiN Mask by Using Metalorganic Chemical Vapor Deposition

Journal of the Korean Physical Society, 2007-11, Vol.51 (5), p.1718-1721

Kim, Deok-Kyu

2007

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The reason of degradation in electrical properties of ZnO:Al thin films annealed with various post-annealing temperature

Current applied physics, 2013-11, p.2001-2004

2013

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Numerical model for electrical explosion of copper wires in water

Measurement on the electrical conductivity of copper along the binodal curve in warm dense regime

SPH code development for X-pinch plasma simulation

Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure

Dependence of the properties of sputter deposited Al-doped ZnO thin films on base pressure

Dependence of the sputtering pressure on the characteristics of sputtered ZnO:Al thin films

Numerical study of plasma evolution X-pinches in two- and three-dimensional geometry using a MHD code, STHENO

The reason of degradation in electrical properties of ZnO:Al thin films annealed with various post-annealing temperature

Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

Initial vacuum effects on the properties of sputter deposited Ga-doped ZnO thin films

Development of a 2D code framework for high-energy-density plasmas of X-pinch

Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure

Effect of RF Power on an Al-doped ZnO Thin Film Deposited by RF Magnetron Sputtering

Dependence of the sputtering pressure on the characteristics of sputtered ZnO:Al thin films

Effect of post-annealing time on the properties of sputtered Al-doped ZnO thin films

Deposition of ZnO thin films on Si by RF magnetron sputtering with various substrate temperatures

Effects of in situ annealing on the properties of Al-doped ZnO thin films deposited by RF magnetron sputtering

Optimum scaling factors for one-dimensional finite-difference time-domain scheme in Maxwell-Boltzmann system

Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (1 1 1)

Fluid-particle hybrid simulation on the transports of plasma, recycling neutrals, and carbon impurities in the Korea Superconducting Tokamak Advanced Research divertor region

Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition

Characteristics of p-type ZnO:As thin films prepared by the ampoule-tube method and ZnO p–n homojunction

Simple mixed equation-of-state model of nonideal plasma for simulation of underwater wire explosion

Dislocation Reduction of GaN Layer with a SiN Mask by Using Metalorganic Chemical Vapor Deposition

The reason of degradation in electrical properties of ZnO:Al thin films annealed with various post-annealing temperature

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