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The Youngest Infant to Be Diagnosed with Autosomal Dominant Hypocalcemia Type 2 Harboring a Novel Variant of GNA11: A Case Study and Literature Review

Annals of clinical and laboratory science, 2022-05, Vol.52 (3), p.494-498

2022

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A self-reset ambient-light sensor system for low-temperature polycrystalline-silicon active-matrix displays

Journal of the Society for Information Display, 2008-08, Vol.16 (8), p.889-893

2008

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Ambient-light sensor system with wide dynamic range enhanced by adaptive sensitivity control

Journal of the Society for Information Display, 2009-08, Vol.17 (8), p.681-686

2009

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9.2: Line-Scan Sequential Lateral Solidification Process for AMOLED Application

SID International Symposium Digest of technical papers, 2009-06, Vol.40 (1), p.88-91

2009

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A single-clock-driven gate driver using p-type, low-temperature polycrystalline silicon thin-film transistors

Journal of Information Display, 2011, 12(1), , pp.61-67

2011

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Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

Thin solid films, 2011-10, Vol.520 (1), p.616-622

2011

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Asymmetric source/drain offset structure for reduced leakage current in polycrystalline-silicon thin-film transistors

Journal of the Society for Information Display, 2009-06, Vol.17 (6), p.501-505

2009

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Reverse annealing of boron doped polycrystalline silicon

Thin solid films, 2008-07, Vol.516 (18), p.6321-6324

2008

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2.22-inch qVGA a-Si TFT-LCD using a 2.5 um fine-patterning technology by wet etch process

Journal of Information Display, 2006-01, Vol.7 (3), p.1-4

2006

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Current manufacturing technologies for TFT-LCDs

Journal of the Society for Information Display, 2001-09, Vol.9 (3), p.139-143

2001

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Reduction of Leakage Currents in Bottom-Gate N-Channel Metal-Induced Crystallization through a Cap Layer Polycrystalline Silicon Thin-Film Transistors by Applying Off-Bias Stress

Japanese Journal of Applied Physics, 2009-08, Vol.48 (8), p.8

2009

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32.2: Touch-Panel Controller Implemented with LTPS TFTs

SID International Symposium Digest of technical papers, 2009-06, Vol.40 (1), p.443-446

2009

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Novel Patterned Vertical Alignment LCD for Mobile Application with High Transmittance and Reliability

Molecular crystals and liquid crystals (Philadelphia, Pa. : 2003), 2007-12, Vol.476 (1), p.77/[323]-84/[330]

2007

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48.1: A New Monolithic Polysilicon Ambient Light Sensor System with Wide Dynamic Range for Active-Matrix Displays by Employing an Adaptive Sensitivity Control Method

SID International Symposium Digest of technical papers, 2008-05, Vol.39 (1), p.716-719

2008

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P-26: Thermally Annealed Asymmetric-Offset Polycrystalline Thin Film Transistor with Low Leakage

SID International Symposium Digest of technical papers, 2008-05, Vol.39 (1), p.1266-1269

2008

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Effect of a Channel Length and Drain Bias on the Threshold Voltage of Field Enhanced Solid Phase Crystallization Polycrystalline Thin Film Transistor on the Glass Substrate

MRS proceedings, 2007, Vol.989, Article 0989-A17-05

2007

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P-134: New Optical Configuration of Transflective LCD for the Low Voltage (2.5V) Driving

SID International Symposium Digest of technical papers, 2007-05, Vol.38 (1), p.710-713

2007

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9.2: Sequential Lateral Solidification (SLS) Process for Large Area AMOLED

SID International Symposium Digest of technical papers, 2008-05, Vol.39 (1), p.97-100

2008

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P-24: Design of Low-Cost 2.2-inch qVGA LTPS TFT-LCD Panel

SID International Symposium Digest of technical papers, 2007-05, Vol.38 (1), p.260-263

2007

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35.2: Development of 3″ VGA LCD for DSC Application

SID International Symposium Digest of technical papers, 2007-05, Vol.38 (1), p.1266-1269

2007

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P-8: a-Si:H TFT-LCD with Single Organic Passivation Layer

SID International Symposium Digest of technical papers, 2007-05, Vol.38 (1), p.199-201

2007

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41.4: AMOLED based on Silicon-On-Glass (SiOG) Technology

SID International Symposium Digest of technical papers, 2007-05, Vol.38 (1), p.1378-1381

2007

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P-3: Development of CMOS Six Mask and PMOS Five Mask Poly-Si Architecture with RGB+White Color

SID International Symposium Digest of technical papers, 2004-05, Vol.35 (1), p.229-231

2004

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28.3: World's Largest (21.3 in.) UXGA Non-Laser LTPS AMLCD

SID International Symposium Digest of technical papers, 2006-06, Vol.37 (1), p.1276-1279

2006

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Effect of SiO2 Capping Layer on a Laser Crystallization of a-Si Thin Film

MRS proceedings, 2003, Vol.762

2003

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The Youngest Infant to Be Diagnosed with Autosomal Dominant Hypocalcemia Type 2 Harboring a Novel Variant of GNA11: A Case Study and Literature Review

A self-reset ambient-light sensor system for low-temperature polycrystalline-silicon active-matrix displays

Ambient-light sensor system with wide dynamic range enhanced by adaptive sensitivity control

9.2: Line-Scan Sequential Lateral Solidification Process for AMOLED Application

A single-clock-driven gate driver using p-type, low-temperature polycrystalline silicon thin-film transistors

Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

Asymmetric source/drain offset structure for reduced leakage current in polycrystalline-silicon thin-film transistors

Reverse annealing of boron doped polycrystalline silicon

2.22-inch qVGA a-Si TFT-LCD using a 2.5 um fine-patterning technology by wet etch process

Current manufacturing technologies for TFT-LCDs

Reduction of Leakage Currents in Bottom-Gate N-Channel Metal-Induced Crystallization through a Cap Layer Polycrystalline Silicon Thin-Film Transistors by Applying Off-Bias Stress

32.2: Touch-Panel Controller Implemented with LTPS TFTs

Novel Patterned Vertical Alignment LCD for Mobile Application with High Transmittance and Reliability

48.1: A New Monolithic Polysilicon Ambient Light Sensor System with Wide Dynamic Range for Active-Matrix Displays by Employing an Adaptive Sensitivity Control Method

P-26: Thermally Annealed Asymmetric-Offset Polycrystalline Thin Film Transistor with Low Leakage

Effect of a Channel Length and Drain Bias on the Threshold Voltage of Field Enhanced Solid Phase Crystallization Polycrystalline Thin Film Transistor on the Glass Substrate

P-134: New Optical Configuration of Transflective LCD for the Low Voltage (2.5V) Driving

9.2: Sequential Lateral Solidification (SLS) Process for Large Area AMOLED

P-24: Design of Low-Cost 2.2-inch qVGA LTPS TFT-LCD Panel

35.2: Development of 3″ VGA LCD for DSC Application

P-8: a-Si:H TFT-LCD with Single Organic Passivation Layer

41.4: AMOLED based on Silicon-On-Glass (SiOG) Technology

P-3: Development of CMOS Six Mask and PMOS Five Mask Poly-Si Architecture with RGB+White Color

28.3: World's Largest (21.3 in.) UXGA Non-Laser LTPS AMLCD

Effect of SiO2 Capping Layer on a Laser Crystallization of a-Si Thin Film

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