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Mutant p53: a novel target for the treatment of patients with triple‐negative breast cancer?

International journal of cancer, 2017-01, Vol.140 (1), p.234-246

2017

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The relationship between post-surgery infection and breast cancer recurrence

The Journal of hospital infection, 2020-11, Vol.106 (3), p.522-535

2020

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OR10,55 GSK-3beta regulates insulin-like growth factor receptor tyrosine kinase activity by phosphorylation of S1248 in the C-terminus

Growth hormone & IGF research, 2010, Vol.20, p.S25-S25

2010

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PO-239 Towards identifying key drivers of breast cancer metastasis to the bone

ESMO open, 2018-07, Vol.3 (Suppl 2), p.A320-A320

2018

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P026 The role of fibrocytes in mesenteric Crohn's disease

Journal of Crohn's and colitis, 2017-02, Vol.11 (suppl_1), p.S92-S93

2017

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10 Gbit∕s transmitter based on directly modulated InGaAlAs laser operating up to 126°C

Electronics letters, 2003-11, Vol.39 (23), p.1653

2003

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Proteins and domains that regulate IGF-1R activation and function

Kiely, P.A

2002

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10 Gbit∕s transmission over 50 km nonzero dispersion-shifted fibre using 1.3 [micro sign]m directly modulated uncooled transmitters

Electronics letters, 2002, Vol.38 (16), p.864

2002

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Single high order mode VCSEL

Electronics letters, 1998-04, Vol.34 (7), p.681

1998

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AC characterisation of the p inverted buried channel heterostructure FET and its suitability for complementary electronics

IEE proceedings. Circuits, devices, and systems, 1995-04, Vol.142 (2), p.105

1995

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A new III-V semiconductor complementary field-effect transistor technology - a theoretical and experimental study of the complementary potential of the n-channel HFET and the p-channel BCHFET

Kiely, P.A

1991

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Short channel threshold dependence of the inversion channel heterostructure field effect transistor

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1871-1873

1994

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Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

IEEE journal of quantum electronics, 1993-02, Vol.29 (2), p.785-800

1993

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A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning

IEEE photonics technology letters, 1993-06, Vol.5 (6), p.634-636, Article 634

1993

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Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth

Electronics letters, 1993, Vol.29 (17), p.1521-1523, Article 1521

1993

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Monolithic integration of lasers with fet and bipolar transistors in inversion channel technology

Electronics letters, 1993-01, Vol.29 (1), p.60-62

1993

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A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

IEEE journal of quantum electronics, 1993-01, Vol.29 (1), p.136-149

1993

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Buried channel heterojunction field-effect transistor (BCHFET)

Electronics letters, 1992-04, Vol.28 (9), p.858-860

1992

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Submicrometre gate length scaling of inversion channel heterojunction field effect transistor

Electronics letters, 1994-03, Vol.30 (6), p.529-531

1994

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An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system

IEEE electron device letters, 1989-07, Vol.10 (7), p.304-306

1989

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An n-channel BICFET in the GaAs/AlGaAs material system

IEEE electron device letters, 1989-02, Vol.10 (2), p.88-90

1989

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Highly accelerated life testing for non-hermetic laser modules

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070), 2000, p.955-961

2000

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GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2446

1988

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Automatic power control of a VCSEL using an angled lid TO56 package

1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206), 1998, p.203-209

1998

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Effect of reflection on un-isolated spot-size-converted 1.3 /spl mu/m DFB lasers for 2.5 Gbit/s transmission

Optical Fiber Communication Conference and Exhibit, 2002, p.473-475

2002

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Mutant p53: a novel target for the treatment of patients with triple‐negative breast cancer?

The relationship between post-surgery infection and breast cancer recurrence

OR10,55 GSK-3beta regulates insulin-like growth factor receptor tyrosine kinase activity by phosphorylation of S1248 in the C-terminus

PO-239 Towards identifying key drivers of breast cancer metastasis to the bone

P026 The role of fibrocytes in mesenteric Crohn's disease

10 Gbit∕s transmitter based on directly modulated InGaAlAs laser operating up to 126°C

Proteins and domains that regulate IGF-1R activation and function

10 Gbit∕s transmission over 50 km nonzero dispersion-shifted fibre using 1.3 [micro sign]m directly modulated uncooled transmitters

Single high order mode VCSEL

AC characterisation of the p inverted buried channel heterostructure FET and its suitability for complementary electronics

A new III-V semiconductor complementary field-effect transistor technology - a theoretical and experimental study of the complementary potential of the n-channel HFET and the p-channel BCHFET

Short channel threshold dependence of the inversion channel heterostructure field effect transistor

Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning

Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth

Monolithic integration of lasers with fet and bipolar transistors in inversion channel technology

A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

Buried channel heterojunction field-effect transistor (BCHFET)

Submicrometre gate length scaling of inversion channel heterojunction field effect transistor

An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system

An n-channel BICFET in the GaAs/AlGaAs material system

Highly accelerated life testing for non-hermetic laser modules

GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology

Automatic power control of a VCSEL using an angled lid TO56 package

Effect of reflection on un-isolated spot-size-converted 1.3 /spl mu/m DFB lasers for 2.5 Gbit/s transmission

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