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Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange

IEEE photonics technology letters, 2017-03, Vol.29 (5), p.458-461

2017

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IEEE_Xplore

High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection

Optics letters, 2021-06, Vol.46 (11), p.2670-2673

2021

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Growth of droplet-free InSbBi on GaAs substrate

AIP advances, 2023-12, Vol.13 (12), p.125221-125221-6

2023

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Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

Applied surface science, 2017-03, Vol.399, p.220-228

2017

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Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

AIP advances, 2021-04, Vol.11 (4), p.045203-045203-5

2021

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Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

Materials letters, 2015-11, Vol.158, p.258-261

2015

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Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.353-360

2017

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IEEE_Xplore

Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

IEEE photonics technology letters, 2016-08, Vol.28 (15), p.1653-1656

2016

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IEEE_Xplore

Dry Etched Waveguide Laser Diode on GeOI

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.264-269

2015

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IEEE_Xplore

Strain-relaxed buffer technology based on metamorphic InxAl1-xAs

Journal of crystal growth, 2015-08, Vol.424, p.68-76

2015

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1.55- \mu m GaNAsSb-Based Photoconductive Switch for Microwave Switching

IEEE photonics technology letters, 2010-08, Vol.22 (15), p.1105-1107

2010

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IEEE_Xplore

GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0550-0553

2014

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IEEE_Xplore

Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

2017 Symposium on VLSI Technology, 2017, p.T56-T57

2017

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Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Semiconductor science and technology, 2024-06, Vol.39 (6), p.65008

2024

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Semi-empirical growth model of InSbBi grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-02, Vol.300, p.117067, Article 117067

2024

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Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-08, Vol.294, p.116533, Article 116533

2023

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14-GHz GaNAsSb Unitraveling-Carrier 1.3-μm Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

IEEE electron device letters, 2009-06, Vol.30 (6), p.590-592

2009

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Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser

Optics express, 2023-08, Vol.31 (17), p.27543-27552

2023

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First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.2.3.1-2.3.4

2015

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IEEE_Xplore

Supersymmetric quantum cascade laser array

Applied physics letters, 2024-03, Vol.124 (11)

2024

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Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

Optics express, 2018-03, Vol.26 (6), p.7227-7234

2018

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Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Journal of crystal growth, 2009-03, Vol.311 (7), p.1754-1757

2009

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Widely tunable single-mode slot waveguide quantum cascade laser array

Optics express, 2022-01, Vol.30 (1), p.629-640

2022

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Growth and characterization of InSb on (100) Si for mid-infrared application

Applied surface science, 2018-05, Vol.440, p.939-945

2018

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Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

ACS photonics, 2018-04, Vol.5 (4), p.1512-1520

2018

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Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange

High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection

Growth of droplet-free InSbBi on GaAs substrate

Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

Dry Etched Waveguide Laser Diode on GeOI

Strain-relaxed buffer technology based on metamorphic InxAl1-xAs

1.55- \mu m GaNAsSb-Based Photoconductive Switch for Microwave Switching

GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures

Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Semi-empirical growth model of InSbBi grown by molecular beam epitaxy

Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy

14-GHz GaNAsSb Unitraveling-Carrier 1.3-μm Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser

First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

Supersymmetric quantum cascade laser array

Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Widely tunable single-mode slot waveguide quantum cascade laser array

Growth and characterization of InSb on (100) Si for mid-infrared application

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

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