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Semiconductors (Woodbury, N.Y.), 2021-11, Vol.55 (11), p.865-868
2021
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Applied physics letters, 2020-01, Vol.116 (1)
2020
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Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1412-1415
2018
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Surface and interface analysis, 2017-02, Vol.49 (2), p.117-121
2017
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Technical physics letters, 2017-05, Vol.43 (5), p.477-480
2017
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Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1511-1514
2016
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Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1569-1573
2016
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Semiconductors (Woodbury, N.Y.), 2017, Vol.51 (8), p.1106-1106
2017
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Journal of crystal growth, 2008-11, Vol.310 (23), p.4724-4726
2008
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Radiophysics and quantum electronics, 2005-06, Vol.48 (6), p.485-490
2005
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Technical physics letters, 2013, Vol.39 (1), p.51-54
2013
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Nanotechnology, 2000-12, Vol.11 (4), p.406-410
2000
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Bulletin of the Russian Academy of Sciences. Physics, 2012-02, Vol.76 (2), p.221-224
2012
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Bulletin of the Russian Academy of Sciences. Physics, 2012-09, Vol.76 (9), p.1036-1040
2012
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Bulletin of the Russian Academy of Sciences. Physics, 2011-09, Vol.75 (9), p.1221-1226
2011
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Bulletin of the Russian Academy of Sciences. Physics, 2010-07, Vol.74 (7), p.1027-1033
2010
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Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1412
2018
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Semiconductors (Woodbury, N.Y.), 2002-05, Vol.36 (5), p.505-510
2002
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Physical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (3), p.035304.1-035304.8, Article 035304
2004
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Bulletin of the Russian Academy of Sciences. Physics, 2009-04, Vol.73 (4), p.485-490
2009
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Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1449-1452
2017
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Physical review. B, Condensed matter, 2001-12, Vol.64 (23), Article 235327
2001
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Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1421-1424
2015
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Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (11), p.1449-1452
2017
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Journal of crystal growth, 2003-02, Vol.248, p.343-347
2003
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