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Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters-A Review

IEEE transactions on power electronics, 2012-06, Vol.27 (6), p.3081-3092

2012

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IEEE_Xplore

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions

Microelectronics and reliability, 2016-03, Vol.58 (3), p.204-210

2016

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Robustness of 1.2 kV SiC MOSFET devices

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1735-1738

2013

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Computational fluid dynamics analysis and optimisation of polymerase chain reaction thermal flow systems

Applied thermal engineering, 2021-01, Vol.183, p.116122, Article 116122

2021

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Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1859-1864

2012

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Saturation Current and On-Resistance Correlation during During Repetitive Short-Circuit Conditions on SiC JFET Transistors

IEEE transactions on power electronics, 2013-02, Vol.28 (2), p.621-624

2013

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IEEE_Xplore

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1766-1771

2006

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Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.276-283

2005

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IEEE_Xplore

Investigations on junction temperature estimation based on junction voltage measurements

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1506-1510

2010

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Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1921-1926

2014

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μ-Raman spectroscopy for stress analysis in high power silicon devices

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1770-1773

2014

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Theoretical investigation of the charges weight between interface and the oxygen traps in barrier layer on the 2DEG density of Al2O3/AlGaN/GaN HEMTs

Journal of computational electronics, 2018-09, Vol.17 (3), p.1220-1228

2018

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Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1725-1729

2013

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A combined boundary integral and vortex method for the numerical study of three-dimensional fluid flow systems

International journal of computer mathematics, 2012-07, Vol.89 (11), p.1504-1524

2012

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Degradation behavior of 600 V–200 A IGBT modules under power cycling and high temperature environment conditions

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1719-1724

2007

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Robustness of SiC JFET in Short-Circuit Modes

IEEE electron device letters, 2009-01, Vol.30 (1), p.51-53

2009

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IEEE_Xplore

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1830-1835

2011

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New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

IEEE electron device letters, 2012-04, Vol.33 (4), p.576-578

2012

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IEEE_Xplore

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1703-1706

2013

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Characterisation of power modules ceramic substrates for reliability aspects

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1260-1266

2009

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Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Microelectronics and reliability, 2007-02, Vol.47 (2), p.422-428

2007

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Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

IEEE transactions on industrial electronics (1982), 2011-10, Vol.58 (10), p.4931-4941

2011

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IEEE_Xplore

Ageing of SiC JFET transistors under repetitive current limitation conditions

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1532-1537

2010

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A boundary element method for the numerical investigation of near-wall fluid flow with vortex method simulation

Engineering analysis with boundary elements, 2004-11, Vol.28 (11), p.1405-1416

KHATIR, Z

2004

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New model of crack propagation of aluminium wire bonds in IGBT power modules under low temperature variations

Microelectronics and reliability, 2023-08, Vol.147, p.115066, Article 115066

2023

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Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters-A Review

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions

Robustness of 1.2 kV SiC MOSFET devices

Computational fluid dynamics analysis and optimisation of polymerase chain reaction thermal flow systems

Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application

Saturation Current and On-Resistance Correlation during During Repetitive Short-Circuit Conditions on SiC JFET Transistors

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Investigations on junction temperature estimation based on junction voltage measurements

Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions

μ-Raman spectroscopy for stress analysis in high power silicon devices

Theoretical investigation of the charges weight between interface and the oxygen traps in barrier layer on the 2DEG density of Al2O3/AlGaN/GaN HEMTs

Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions

A combined boundary integral and vortex method for the numerical study of three-dimensional fluid flow systems

Degradation behavior of 600 V–200 A IGBT modules under power cycling and high temperature environment conditions

Robustness of SiC JFET in Short-Circuit Modes

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications

New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications

Characterisation of power modules ceramic substrates for reliability aspects

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

Ageing of SiC JFET transistors under repetitive current limitation conditions

A boundary element method for the numerical investigation of near-wall fluid flow with vortex method simulation

New model of crack propagation of aluminium wire bonds in IGBT power modules under low temperature variations

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