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Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Journal of the Society for Information Display, 2011-09, Vol.19 (9), p.623-626

2011

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Study of Nanocrystalline Silicon Films Synthesized Below 100 °C by Catalytic Chemical Vapor Deposition

Journal of nanoscience and nanotechnology, 2013-11, Vol.13 (11), p.7519-7523

2013

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Optical and Structural Properties of Nanocrystalline Silicon Potential Well Structure Fabricated by Cat-Chemical Vapor Deposition at 200 °C

Journal of nanoscience and nanotechnology, 2013-11, Vol.13 (11), p.7568-7571

2013

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High-rate, low-temperature deposition of multifunctional nano-crystalline silicon nitride films

Journal of Information Display, 2010, 11(3), , pp.109-112

2010

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Influence of filament geometry on film uniformity in a catalytic CVD system for low-temperature processing

Journal of Information Display, 2014, 15(1), , pp.25-30

2014

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Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100

ECS transactions, 2013-03, Vol.50 (8), p.55-58

2013

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Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature(≤150 °) by Cat-CVD

ECS transactions, 2011, Vol.35 (31), p.73-76

2011

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The Hysteresis Characteristics of Low Temperature (≤ 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

ECS transactions, 2011, Vol.35 (18), p.47-52

2011

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Study of nanocrystalline silicon films synthesized Below 100 degrees C by catalytic chemical vapor deposition

Journal of nanoscience and nanotechnology, 2013-11, Vol.13 (11), p.7519

2013

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Optical and structural properties of nanocrystalline silicon potential well structure fabricated by cat-chemical vapor deposition at 200 degrees C

Journal of nanoscience and nanotechnology, 2013-11, Vol.13 (11), p.7568

2013

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Characteristics of Silicon Nitride Films Deposited by Cat-CVD at a Low Temperature (100 ℃)

ECS transactions, 2013-04, Vol.45 (25), p.5-8

2013

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Characteristics of Low Temperature SiNx Films Deposited by Using Highly Diluted Silane in Nitrogen

Korean Journal of Metals and Materials, 2012-08, Vol.50 (8), p.613-618

2012

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High-rate, Low-temperature Deposition of Multifunctional Nano-crystalline Silicon Nitride Films

Journal of Information Display, 2010, Vol.11 (3), p.109-112

2010

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Effect of Composition on Electrical Properties of Multifunctional Silicon Nitride Films Deposited at Temperatures below 200

Korean Journal of Metals and Materials, 2012-04, Vol.50 (4), p.331-337

2012

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Study of the SiO X Films Deposition Method in Cat-CVD System

Meeting abstracts (Electrochemical Society), 2012-02, Vol.MA2012-01 (16), p.721-721

2012

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Characteristics of Silicon Nitride Films Deposited by Cat-CVD at a Low Temperature (100 °)

Meeting abstracts (Electrochemical Society), 2012-02, Vol.MA2012-01 (5), p.141-141

2012

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Study of Low Temperature (180°C) Dual-Select-Diode for Applications to Pixel Switching or Light Emission Elements

Meeting abstracts (Electrochemical Society), 2012-02, Vol.MA2012-01 (5), p.139-139

2012

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Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (42), p.3081-3081

2012

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Study of Optical and Structural Properties of SRSN Fabricated by Cat-CVD below 200 oC

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (2), p.230-230

2012

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Characteristics of Low-Temperature(≤200 °) PECVD Silicon Nitride for Gate Dielectric of TFTs by Using N 2 Highly Diluted SiH 4

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (2), p.10-10

2012

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The Hysteresis Characteristics of Low Temperature ({less than or equal to} 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (19), p.1259-1259

2011

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Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature({less than or equal to} 150 °) by Cat-CVD

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (2), p.62-62

2011

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Characteristics of Low-Temperature(≤100 °) Cat-CVD Silicon Nitride Films for Gate Dielectrics on Flexible Substrates

Meeting abstracts (Electrochemical Society), 2012-02, Vol.MA2012-01 (2), p.53-53

2012

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Characteristics of Silicon Nanocrystals Embedded in the Silicon Nitride Films Deposited by PE-CVD for Optoelectronics Applications

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (1), p.86-86

2010

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Characteristics of Low-Temperature ({less than or equal to}200 {degree sign}C) Cat-CVD Silicon Nitride Films Annealed In Situ with Atomic Hydrogen for Gate Dielectrics on Flexible Substrates

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (1), p.80-80

2010

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Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Study of Nanocrystalline Silicon Films Synthesized Below 100 °C by Catalytic Chemical Vapor Deposition

Optical and Structural Properties of Nanocrystalline Silicon Potential Well Structure Fabricated by Cat-Chemical Vapor Deposition at 200 °C

High-rate, low-temperature deposition of multifunctional nano-crystalline silicon nitride films

Influence of filament geometry on film uniformity in a catalytic CVD system for low-temperature processing

Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100

Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature(≤150 °) by Cat-CVD

The Hysteresis Characteristics of Low Temperature (≤ 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Study of nanocrystalline silicon films synthesized Below 100 degrees C by catalytic chemical vapor deposition

Optical and structural properties of nanocrystalline silicon potential well structure fabricated by cat-chemical vapor deposition at 200 degrees C

Characteristics of Silicon Nitride Films Deposited by Cat-CVD at a Low Temperature (100 ℃)

Characteristics of Low Temperature SiNx Films Deposited by Using Highly Diluted Silane in Nitrogen

High-rate, Low-temperature Deposition of Multifunctional Nano-crystalline Silicon Nitride Films

Effect of Composition on Electrical Properties of Multifunctional Silicon Nitride Films Deposited at Temperatures below 200

Study of the SiO X Films Deposition Method in Cat-CVD System

Characteristics of Silicon Nitride Films Deposited by Cat-CVD at a Low Temperature (100 °)

Study of Low Temperature (180°C) Dual-Select-Diode for Applications to Pixel Switching or Light Emission Elements

Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100

Study of Optical and Structural Properties of SRSN Fabricated by Cat-CVD below 200 oC

Characteristics of Low-Temperature(≤200 °) PECVD Silicon Nitride for Gate Dielectric of TFTs by Using N 2 Highly Diluted SiH 4

The Hysteresis Characteristics of Low Temperature ({less than or equal to} 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Effect of Atomic Hydrogen in SiN x Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature({less than or equal to} 150 °) by Cat-CVD

Characteristics of Low-Temperature(≤100 °) Cat-CVD Silicon Nitride Films for Gate Dielectrics on Flexible Substrates

Characteristics of Silicon Nanocrystals Embedded in the Silicon Nitride Films Deposited by PE-CVD for Optoelectronics Applications

Characteristics of Low-Temperature ({less than or equal to}200 {degree sign}C) Cat-CVD Silicon Nitride Films Annealed In Situ with Atomic Hydrogen for Gate Dielectrics on Flexible Substrates

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