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Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)

Applied physics letters, 2011-10, Vol.99 (14)

2011

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Surface passivation of random alloy AlGaAsSb avalanche photodiode

Electronics letters, 2023-09, Vol.59 (18), p.n/a

2023

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A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

Applied physics. A, Materials science & processing, 2020-06, Vol.126 (6), Article 427

2020

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Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Nano select, 2021-04, Vol.2 (4), p.688-711

2021

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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Advanced photonics research, 2022-02, Vol.3 (2), p.n/a

2022

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Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire

Crystal growth & design, 2011-11, Vol.11 (11), p.4900-4903

2011

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Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

AIP Conference Proceedings, 2014, Vol.1583 (1), p.258

2014

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Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

Materials research bulletin, 2011-11, Vol.46 (11), p.1811-1813

2011

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Recent trends in 8–14 μm type-II superlattice infrared detectors

Infrared physics & technology, 2021-08, Vol.116, p.103756, Article 103756

2021

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Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

ACS applied materials & interfaces, 2023-02, Vol.15 (6), p.8624-8635

2023

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Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability

IEEE journal of quantum electronics, 2021-04, Vol.57 (2), p.1-6

2021

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Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al 2 O 3 (0001)

Applied physics letters, 2011-10, Vol.99 (14), p.143105-143105-3

2011

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High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

Solid state communications, 2013-10, Vol.171, p.8-13

2013

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The Origin of Shape, Orientation, and Structure of Spontaneously Formed Wurtzite GaN Nanorods on Cubic Si(001) Surface

Crystal growth & design, 2013-06, Vol.13 (6), p.2407-2412

2013

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Spontaneous formation of GaN nanostructures by molecular beam epitaxy

Journal of crystal growth, 2011-07, Vol.326 (1), p.191-194

2011

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Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

Applied surface science, 2009-10, Vol.256 (2), p.576-579

2009

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Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Advanced optical materials, 2018-02, Vol.6 (3), p.n/a

2018

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Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si( 1 1 1)7 x 7 surface

Applied surface science, 2009, Vol.256 (2), p.576-579

2009

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Role of Substrate Temperature in the Pulsed Laser Deposition of Zirconium Oxide Thin Film

Materials science forum, 2012, Vol.710, p.757-761

2012

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Growth of aligned wurtzite GaN nanorods on Si(111): Role of Silicon nitride intermediate layer

MRS proceedings, 2012, Vol.1411 (1), p.57-62, Article mrsf11-1411-ee09-24

2012

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Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)

Surface passivation of random alloy AlGaAsSb avalanche photodiode

A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

Recent trends in 8–14 μm type-II superlattice infrared detectors

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability

Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al 2 O 3 (0001)

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

The Origin of Shape, Orientation, and Structure of Spontaneously Formed Wurtzite GaN Nanorods on Cubic Si(001) Surface

Spontaneous formation of GaN nanostructures by molecular beam epitaxy

Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si( 1 1 1)7 x 7 surface

Role of Substrate Temperature in the Pulsed Laser Deposition of Zirconium Oxide Thin Film

Growth of aligned wurtzite GaN nanorods on Si(111): Role of Silicon nitride intermediate layer

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