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Investigation of the Effects and the Random-Dopant-Induced Variations of Source/Drain Extension of 7-nm Strained SiGe n-Type FinFETs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.847-854

2019

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IEEE_Xplore

Investigation on the Effects of Gate-Source Overlap/Underlap and Source Doping Gradient of n-Type Si Cylindrical Gate-All-Around Tunnel Field-Effect Transistors

IEEE transactions on nanotechnology, 2020, Vol.19, p.382-389

2020

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IEEE_Xplore

Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DC19-04DC19-5

Liu, Keng-Ming

2011

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Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.4-10

2011

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IEEE_Xplore

Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BC14-02BC14-7

2012

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Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors

Journal of applied physics, 2008-12, Vol.104 (11)

2008

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Investigation of the random dopant fluctuations in 20-nm bulk mosfets and silicon-on-Insulator FinFETs by Ion implantation Monte Carlo simulation

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, p.263-266

2013

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IEEE_Xplore

Effects of the correlation length of line edge roughness on the variability of 14-nm inversion-mode and junctionless FinFETs

International journal of electronics letters, 2018-04, Vol.6 (2), p.220-230

2018

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Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

Liu, Keng-Ming

2011

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Investigation of p-type junction-less independent double-gate poly-Si nano-strip transistors

Semiconductor science and technology, 2014-01, Vol.29 (1), p.15008

2014

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Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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A field-programmable lab-on-a-chip with built-in self-test circuit and low-power sensor-fusion solution in 0.35μm standard CMOS process

2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2015, p.1-4

2015

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The effects of source doping concentration and doping gradient on the ON-state current of Si nanowire TFETs

Journal of computational electronics, 2023-02, Vol.22 (1), p.209-218

2023

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Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor

Solid state electronics letters, 2020-12, Vol.2, p.44-48

2020

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Investigation on Fin and Gate Line Edge Roughness Effects for Sub-22 nm Inversion- Mode and Junctionless FinFETs

International journal of engineering trends and technology, 2016-10, Vol.40 (2), p.72-76

2016

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Investigation of the dimension effects of 30-nm below multiple-gate SOI MOSFETs by TCAD simulation

The 4th IEEE International NanoElectronics Conference, 2011, p.1-2

2011

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IEEE_Xplore

Schrödinger equation Monte Carlo in three dimensions for simulationof carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors

Journal of applied physics, 2008-12, Vol.104 (11), p.114515-114515-7

2008

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Schrödinger Equation Monte Carlo-3D for simulation of nanoscale MOSFETs

2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007, p.1120-1125

2007

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IEEE_Xplore

Inhibition of oxidative degradation of hyaluronic acid by uric acid

Current eye research, 1984-01, Vol.3 (8), p.1049-1053

1984

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Schrodinger Equation Monte Carlo in three dimensions for simulation of nanoscale MOSFETs

Liu, Keng-Ming

2008

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ProQuest

Detection of uric acid in aqueous humor by high pressure liquid chromatography

Current eye research, 1982, Vol.2 (10), p.645-649

1982

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Replication-dependent and independent mechanisms for the chromosome-coupled persistence of a selfish genome

Nucleic acids research, 2016-09, Vol.44 (17), p.8302

2016

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Learning Curve of Upper Aerodigestive Tract Foreign Body Management for Otorhinolaryngology Residents

O.R.L. Journal for oto-rhino-laryngology and its related specialties, 2022, Vol.84 (3), p.193-199

2022

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Alkenyl Succinic Anhydride Structure Influences the Surface Activities of Gelatin Derivatives

Journal of surfactants and detergents, 2016-01, Vol.19 (1), p.1-9

2016

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Topological similarity between the 2μm plasmid partitioning locus and the budding yeast centromere: evidence for a common evolutionary origin?

Biochemical Society transactions, 2013-04, Vol.41 (2), p.501

2013

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Investigation of the Effects and the Random-Dopant-Induced Variations of Source/Drain Extension of 7-nm Strained SiGe n-Type FinFETs

Investigation on the Effects of Gate-Source Overlap/Underlap and Source Doping Gradient of n-Type Si Cylindrical Gate-All-Around Tunnel Field-Effect Transistors

Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs

Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors

Investigation of the random dopant fluctuations in 20-nm bulk mosfets and silicon-on-Insulator FinFETs by Ion implantation Monte Carlo simulation

Effects of the correlation length of line edge roughness on the variability of 14-nm inversion-mode and junctionless FinFETs

Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Investigation of p-type junction-less independent double-gate poly-Si nano-strip transistors

Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

A field-programmable lab-on-a-chip with built-in self-test circuit and low-power sensor-fusion solution in 0.35μm standard CMOS process

The effects of source doping concentration and doping gradient on the ON-state current of Si nanowire TFETs

Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor

Investigation on Fin and Gate Line Edge Roughness Effects for Sub-22 nm Inversion- Mode and Junctionless FinFETs

Investigation of the dimension effects of 30-nm below multiple-gate SOI MOSFETs by TCAD simulation

Schrödinger equation Monte Carlo in three dimensions for simulationof carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors

Schrödinger Equation Monte Carlo-3D for simulation of nanoscale MOSFETs

Inhibition of oxidative degradation of hyaluronic acid by uric acid

Schrodinger Equation Monte Carlo in three dimensions for simulation of nanoscale MOSFETs

Detection of uric acid in aqueous humor by high pressure liquid chromatography

Replication-dependent and independent mechanisms for the chromosome-coupled persistence of a selfish genome

Learning Curve of Upper Aerodigestive Tract Foreign Body Management for Otorhinolaryngology Residents

Alkenyl Succinic Anhydride Structure Influences the Surface Activities of Gelatin Derivatives

Topological similarity between the 2μm plasmid partitioning locus and the budding yeast centromere: evidence for a common evolutionary origin?

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