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Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology

Microelectronics and reliability, 2007-08, Vol.47 (8), p.1175-1179

2007

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Diabatic Field Ionization of Highly Excited Sodium Atoms

Physical review letters, 1980-02, Vol.44 (6), p.390-393

1980

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Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy

Applied physics letters, 1987-09, Vol.51 (12), p.910-912

1987

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Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures

Journal of electronic materials, 1989-05, Vol.18 (3), p.355-360

1989

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Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy

Applied physics letters, 1995-08, Vol.67 (6), p.834-836

1995

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Low energy ion counting efficiency of a Johnston electron multiplier

Review of scientific instruments, 1980-03, Vol.51 (3), p.396-397

1980

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Zn-doping in OMVPE grown InP:Zn/InGaAs/InP p-i-n double heterojunctions with InGaAs:Zn contacting layers

Journal of electronic materials, 1992, Vol.21 (10), p.983-987

1992

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GaAs HBT Reliability

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4

2008

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Tellurium induced lattice dilation in OMVPE grown InP

Journal of electronic materials, 1990-12, Vol.19 (12), p.1425-1428

1990

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Collisions of xenon ( n f ) Rydberg atoms with ammonia

The Journal of chemical physics, 1980-03, Vol.72 (5), p.3179-3190

1980

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OMVPE growth of 660 nm AlGaAs double heterojunction LEDs

Journal of electronic materials, 1986, Vol.15 (1), p.13-19

1986

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The effects of 300 K background radiation on Rydberg atoms

The Journal of chemical physics, 1979-01, Vol.70 (7), p.3551-3552

1979

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Ionization of xenon atoms in high Rydberg states by collision with molecules

The Journal of chemical physics, 1977-01, Vol.67 (4), p.1352-1359

1977

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Ionization of xenon atoms in selected high Rydberg states by collision with CH3I, C7F14, C6F6, and CH3Br

The Journal of chemical physics, 1978-02, Vol.68 (4), p.1349-1354

1978

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OMVPE growth of In0.53Ga0.47As on InP using tertiarybutylarsine

Journal of electronic materials, 1990-04, Vol.19 (4), p.311-315

1990

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Study of Rydberg-atom l -changing collisions using selective field ionization

Physical review. A, General physics, 1981-01, Vol.23 (3), p.1127-1133

1981

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OMVPE growth of 660 nm AIGaAs double heterojunction LEDs

Journal of electronic materials, 1986-01, Vol.15 (1), p.13-19

1986

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Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers

Journal of electronic materials, 1992-10, Vol.21 (10), p.983-987

1992

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Characterization of InP grown by OMVPE using trimethylindium and tertiarylbutyl-phosphine (TBP) at low V/III ratios and reduced TBP partial pressures

Journal of electronic materials, 1989, Vol.18 (3), p.355-360

1989

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High-density, planar Zn-diffused InGaAs/InP photodetector arrays with extended short-wavelength response

IEEE transactions on electron devices, 1991-12, Vol.38 (12), p.2707

1991

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Use of a transistor array to predict infant transistor mortality rate in InGaP/GaAs heterojunction bipolar transistor technology

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop], 2008, p.125-136

2008

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Tellurium induced lattice dilation in OMPVE grown InP

Journal of electronic materials, 1990, Vol.19 (12), p.1425-1428

1990

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Measurement of Infant Mortality Rate in InGaP/GaAs Heterojunction Bipolar Transistor Technology

[Reliability of Compound Semiconductors] ROCS Workshop 2006, 2006, p.117-127

2006

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Uniformity of Arsenic Dimer and Tetramer Fluxes from a Valved Arsenic Cracking Source in MBE

MRS proceedings, 1995, Vol.378, p.231-236, Article 231

1995

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Pressure dependence of Al sub(x)Ga sub(1-x)As light emitting diodes near the direct-indirect transition

Journal of applied physics, 1985-01, Vol.57 (5), p.1734-1738

1985

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Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology

Diabatic Field Ionization of Highly Excited Sodium Atoms

Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy

Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures

Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy

Low energy ion counting efficiency of a Johnston electron multiplier

Zn-doping in OMVPE grown InP:Zn/InGaAs/InP p-i-n double heterojunctions with InGaAs:Zn contacting layers

GaAs HBT Reliability

Tellurium induced lattice dilation in OMVPE grown InP

Collisions of xenon ( n f ) Rydberg atoms with ammonia

OMVPE growth of 660 nm AlGaAs double heterojunction LEDs

The effects of 300 K background radiation on Rydberg atoms

Ionization of xenon atoms in high Rydberg states by collision with molecules

Ionization of xenon atoms in selected high Rydberg states by collision with CH3I, C7F14, C6F6, and CH3Br

OMVPE growth of In0.53Ga0.47As on InP using tertiarybutylarsine

Study of Rydberg-atom l -changing collisions using selective field ionization

OMVPE growth of 660 nm AIGaAs double heterojunction LEDs

Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers

Characterization of InP grown by OMVPE using trimethylindium and tertiarylbutyl-phosphine (TBP) at low V/III ratios and reduced TBP partial pressures

High-density, planar Zn-diffused InGaAs/InP photodetector arrays with extended short-wavelength response

Use of a transistor array to predict infant transistor mortality rate in InGaP/GaAs heterojunction bipolar transistor technology

Tellurium induced lattice dilation in OMPVE grown InP

Measurement of Infant Mortality Rate in InGaP/GaAs Heterojunction Bipolar Transistor Technology

Uniformity of Arsenic Dimer and Tetramer Fluxes from a Valved Arsenic Cracking Source in MBE

Pressure dependence of Al sub(x)Ga sub(1-x)As light emitting diodes near the direct-indirect transition

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