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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.45-50

2018

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In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

IEEE electron device letters, 2017-03, Vol.38 (3), p.353-355

2017

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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

IEEE electron device letters, 2020-03, Vol.41 (3), p.349-352

2020

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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Acta materialia, 2013-02, Vol.61 (3), p.945-951

2013

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First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

IEEE electron device letters, 2017-11, Vol.38 (11), p.1575-1578

2017

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Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Applied physics letters, 2020-03, Vol.116 (11)

2020

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N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

IEEE electron device letters, 2018-07, Vol.39 (7), p.1014-1017

2018

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High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

Electronics letters, 2024-07, Vol.60 (13), p.n/a

2024

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Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

Applied physics letters, 2009-02, Vol.94 (6), p.061116-061116-3

2009

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Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Applied physics letters, 2019-10, Vol.115 (17)

2019

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High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.878-882

2016

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Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

Applied physics letters, 2019-07, Vol.115 (3)

2019

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Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2009-07, Vol.311 (15), p.3817-3823

2009

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N-polar GaN epitaxy and high electron mobility transistors

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74009

2013

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High internal and external quantum efficiency InGaN/GaN solar cells

Applied physics letters, 2011-01, Vol.98 (2), p.021102-021102-3

2011

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Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Applied physics letters, 2019-06, Vol.114 (24)

2019

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Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

Applied physics letters, 2010-04, Vol.96 (14), p.143504-143504-3

2010

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Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Light, science & applications, 2021-07, Vol.10 (1), p.150-150, Article 150

2021

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Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

Semiconductor science and technology, 2016-11, Vol.31 (12), p.125018

2016

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Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures

IEEE electron device letters, 2020-03, Vol.41 (3), p.345-348

2020

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Growth of high purity N-polar (In,Ga)N films

Journal of crystal growth, 2017-04, Vol.464, p.127-131

2017

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Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

IEEE electron device letters, 2018-07, Vol.39 (7), p.1007-1010

2018

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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

N-polar GaN epitaxy and high electron mobility transistors

High internal and external quantum efficiency InGaN/GaN solar cells

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures

Growth of high purity N-polar (In,Ga)N films

Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

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