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High-brightness polarized light-emitting diodes

Light, science & applications, 2012-08, Vol.1 (8), p.e22-e22

2012

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Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy

ACS photonics, 2018-02, Vol.5 (2), p.528-534

2018

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Journal of crystal growth, 2013-11, Vol.382, p.80-86

2013

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Optical properties and carrier dynamics in m -plane InGaN quantum wells

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.690-693

2014

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Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

Applied physics express, 2010-09, Vol.3 (9), p.92103

2010

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InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates

Applied physics express, 2010-05, Vol.3 (5), p.52702

2010

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Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m -Plane InGaN Light-Emitting Diodes

Applied physics express, 2013-09, Vol.6 (9), p.92104

2013

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Low damage dry etch for III-nitride light emitters

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85019

2015

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AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

Applied physics express, 2010-01, Vol.3 (1), p.11002

2010

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m -Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching

Applied physics express, 2009-12, Vol.2 (12), p.121004

2009

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Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Japanese Journal of Applied Physics, 2007-08, Vol.46 (8L), p.L761

2007

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Aperture-Based Scanning Near-Field Optical Microscopy of Metallic Projection Patterns

2023 International Applied Computational Electromagnetics Society Symposium (ACES), 2023, p.1-2

2023

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AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

Applied physics express, 2011-09, Vol.4 (9), p.92105

2011

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Blue InGaN/GaN laser diodes grown on (33$ bar 3 bar 1 $) free-standing GaN substrates

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2390-2392

2011

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Atomic Layer Deposition of SiC x N y Using Si 2 Cl 6 and CH 3 NH 2 Plasma

Chemistry of materials, 2017-08, Vol.29 (15), p.6269-6278

2017

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Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Applied physics letters, 2011-06, Vol.98 (25), p.251112-251112-3

2011

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Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition

Applied physics letters, 2012-02, Vol.100 (8), p.082103-082103-4

2012

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Journal of crystal growth, 2013-11, Vol.382 (C)

2013

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Electroluminescence characteristics of blue InGaN quantum wells on m -plane GaN “double miscut” substrates

Applied physics express, 2015-06, Vol.8 (6), p.61002

2015

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Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate

Applied physics express, 2009-08, Vol.2, p.82102

2009

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Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Applied physics letters, 2011-06, Vol.98 (25)

2011

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Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

Applied physics express, 2009-07, Vol.2, p.71003

2009

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High-brightness polarized light-emitting diodes

Light, science & applications, 2012-08, Vol.1 (8)

2012

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Atomic Layer Deposition of SiC x N y Using Si2Cl6 and CH3NH2 Plasma

Chemistry of materials, 2017-08, Vol.29 (15), p.6269-6278

2017

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Nonpolar m-plane gallium Nitride-based Laser Diodes in the Blue Spectrum

Kelchner, Kathryn M

2012

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High-brightness polarized light-emitting diodes

Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Optical properties and carrier dynamics in m -plane InGaN quantum wells

Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates

Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m -Plane InGaN Light-Emitting Diodes

Low damage dry etch for III-nitride light emitters

AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

m -Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching

Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Aperture-Based Scanning Near-Field Optical Microscopy of Metallic Projection Patterns

AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

Blue InGaN/GaN laser diodes grown on (33$ bar 3 bar 1 $) free-standing GaN substrates

Atomic Layer Deposition of SiC x N y Using Si 2 Cl 6 and CH 3 NH 2 Plasma

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Electroluminescence characteristics of blue InGaN quantum wells on m -plane GaN “double miscut” substrates

Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

High-brightness polarized light-emitting diodes

Atomic Layer Deposition of SiC x N y Using Si2Cl6 and CH3NH2 Plasma

Nonpolar m-plane gallium Nitride-based Laser Diodes in the Blue Spectrum

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