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Observation of hardening during relaxation of InGaAs on GaAs

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A198-A201

2003

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Surface topography changes during the growth of GaAs by molecular beam epitaxy

Applied physics letters, 1991-12, Vol.59 (25), p.3282-3284

1991

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In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10A), p.A109-A113

2001

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Dependence of the critical thickness on Si doping of InGaAs on GaAs

Applied physics letters, 2000-10, Vol.77 (14), p.2156-2158

2000

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In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

Journal of physics. D, Applied physics, 1995-04, Vol.28 (4A), p.A17-A22

1995

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Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Applied physics letters, 2005-09, Vol.87 (10)

2005

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Z -contrast imaging of AlN exclusion layers in GaN field-effect transistors

Applied physics letters, 2005-07, Vol.87 (4), p.042101-042101-3

2005

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X-ray optics of in situ synchrotron topography of InGaAs on GaAs

Journal of physics. D, Applied physics, 1999-05, Vol.32 (10A), p.A119-A122

1999

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Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction

Applied physics letters, 2004-12, Vol.85 (26), p.6359-6361

2004

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Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.468-471

2002

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Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction

Semiconductor science and technology, 1996-07, Vol.11 (7), p.1051-1055

1996

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X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarily

Journal of physics. D, Applied physics, 1993-04, Vol.26 (4A), p.A181-A187

1993

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Effect of Si doping on the relaxation mechanism of InGaAs on GaAs

Applied physics letters, 2002-10, Vol.81 (15), p.2773-2775

2002

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X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth

Journal of physics. D, Applied physics, 1993-04, Vol.26 (4A), p.A45-A49

1993

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X-ray topography and diffractometry of strained layer heteroepitaxial structures

Semiconductor science and technology, 1992-01, Vol.7 (1A), p.A158-A162

1992

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High resolution X-ray diffraction studies of CdxHg1- xTe/ CdTe epitaxial layers grown by MOVPE on GaAs substrates

Journal of crystal growth, 1990-04, Vol.101 (1), p.572-578

1990

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A combination of high-resolution X-ray diffractometry and diffraction imaging techniques applied to the study of MOVPE-grown CdxHg1-xTe/CdTe on GaAs

Applied surface science, 1991-06, Vol.50 (1-4), p.103-108

1991

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In-situ X-ray imaging of III–V strained-layer relaxation processes

Journal of crystal growth, 1995, Vol.150 (1-4), p.85-91

1995

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Rapid chemography of porous silicon undergoing hydrolysis

Advanced materials (Weinheim), 1994-11, Vol.6 (11), p.865-868

1994

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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system

Applied surface science, 1998-01, Vol.123-124, p.718-724

1998

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Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation

Journal of crystal growth, 1999-03, Vol.198, p.1146-1150

1999

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Opening the “Black Box” for Canadian Cardiac Surgery Residency Applicants

CJC open (Online), 2022-11, Vol.4 (11), p.979-988

2022

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Measurement of III–V quaternary composition using X-ray diffraction

IEE proceedings. Optoelectronics, 2001-04, Vol.148 (2), p.97

2001

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Early mobilization and recovery in mechanically ventilated patients in the ICU: a bi-national, multi-centre, prospective cohort study

Critical care (London, England), 2015-02, Vol.19 (1), p.81-81, Article 81

2015

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Thermal mapping of defects in Al Ga N ∕ Ga N heterostructure field-effect transistors using micro-Raman spectroscopy

Applied physics letters, 2005-09, Vol.87 (10), p.103508-103508-3

2005

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Observation of hardening during relaxation of InGaAs on GaAs

Surface topography changes during the growth of GaAs by molecular beam epitaxy

In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

Dependence of the critical thickness on Si doping of InGaAs on GaAs

In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Z -contrast imaging of AlN exclusion layers in GaN field-effect transistors

X-ray optics of in situ synchrotron topography of InGaAs on GaAs

Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction

Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates

Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction

X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarily

Effect of Si doping on the relaxation mechanism of InGaAs on GaAs

X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth

X-ray topography and diffractometry of strained layer heteroepitaxial structures

High resolution X-ray diffraction studies of CdxHg1- xTe/ CdTe epitaxial layers grown by MOVPE on GaAs substrates

A combination of high-resolution X-ray diffractometry and diffraction imaging techniques applied to the study of MOVPE-grown CdxHg1-xTe/CdTe on GaAs

In-situ X-ray imaging of III–V strained-layer relaxation processes

Rapid chemography of porous silicon undergoing hydrolysis

In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system

Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation

Opening the “Black Box” for Canadian Cardiac Surgery Residency Applicants

Measurement of III–V quaternary composition using X-ray diffraction

Early mobilization and recovery in mechanically ventilated patients in the ICU: a bi-national, multi-centre, prospective cohort study

Thermal mapping of defects in Al Ga N ∕ Ga N heterostructure field-effect transistors using micro-Raman spectroscopy

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