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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Applied physics letters, 2024-05, Vol.124 (21)

2024

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Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.02SP49

2024

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Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Journal of applied physics, 2020-05, Vol.127 (18)

2020

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Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4067-4072

2020

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Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

IEEE transactions on magnetics, 2022-05, Vol.58 (5), p.1-10

2022

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Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5060-5064

2019

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Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Japanese Journal of Applied Physics, 2022-06, Vol.61 (SD), p.SD1024

2022

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Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1010

2023

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Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.950-955

2018

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Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.296-299

2017

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Reduction of Slow Trap Density in Al 2 O 3 /GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5060-5064

2019

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Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-01, Vol.66 (12), p.5060

2019

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Evaluation and study of spin Seebeck effect in Pt/Y3Fe5O12/Gd3Ga5O12 and Pt/Y3Fe5O12/sapphire systems

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1)

2020

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Evaluation and study of spin Seebeck effect in Pt/Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 and Pt/Y 3 Fe 5 O 12 /sapphire systems

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.13001

2020

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Realization of MoTe 2 CMOS inverter by contact doping and channel encapsulation

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al 2 O 3 /plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1089

2023

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Enhanced contact properties of MoTe 2 -FET via laser-induced heavy doping

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1010

2023

Volltextzugriff (PDF)

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC)

2023

Volltextzugriff (PDF)

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeOx/(111) and (100) n-Ge MOS structures

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1089

2023

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Slow Trap Properties and Generation in Al 2 O 3 /GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

ACS applied electronic materials, 2019-03, Vol.1 (3), p.311-317

2019

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Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO x Interfacial Layers Formed by Plasma Pre-Oxidation

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.950-955

2018

Volltextzugriff (PDF)

Slow Trap Properties and Generation in Al2O3/GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

ACS applied electronic materials, 2019-03, Vol.1 (3), p.311-317

2019

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Effectiveness of Synchronization and Cooperative Behavior of Multiple Robots based on Swarm AI

2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2019, p.341-344

2019

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Improvement of Generalization Performance for Timber Health Monitoring using Machine Learning

2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2020, p.197-200

2020

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Damage-Position Identification of Wooden-House Models for Structural Health Monitoring Using Machine Learning

2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2020, p.114-117

2020

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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

Reduction of Slow Trap Density in Al 2 O 3 /GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

Evaluation and study of spin Seebeck effect in Pt/Y3Fe5O12/Gd3Ga5O12 and Pt/Y3Fe5O12/sapphire systems

Evaluation and study of spin Seebeck effect in Pt/Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 and Pt/Y 3 Fe 5 O 12 /sapphire systems

Realization of MoTe 2 CMOS inverter by contact doping and channel encapsulation

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al 2 O 3 /plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Enhanced contact properties of MoTe 2 -FET via laser-induced heavy doping

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeOx/(111) and (100) n-Ge MOS structures

Slow Trap Properties and Generation in Al 2 O 3 /GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO x Interfacial Layers Formed by Plasma Pre-Oxidation

Slow Trap Properties and Generation in Al2O3/GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

Effectiveness of Synchronization and Cooperative Behavior of Multiple Robots based on Swarm AI

Improvement of Generalization Performance for Timber Health Monitoring using Machine Learning

Damage-Position Identification of Wooden-House Models for Structural Health Monitoring Using Machine Learning

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